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Patent US6458416B1 successfully refreshed from Google Patents.
US6458416B1
Expired / Lapsed
US
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Deposition methods
Assignee: Micron Technology Inc
•
Filing: 2000-07-19
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Granted: 2002-10-01
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Expires: 2020-07-19
Abstract
Abstract A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.
Inventors
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/403; C23C16/45527; C23C16/45531; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; B; B05; B05D; B05D1/00; B05D1/18; B05D1/185; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
78 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate; and contacting at least a part of the substrate with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on the substrate in a region less susceptible to formation of the first portion of the initiation layer than to formation of the second portion.
Claim 2
Dependent Claim
78 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate; and contacting at least a part of the substrate with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on the substrate in a region less susceptible to formation of the first portion of the initiation layer than to formation of the second portion.
Claim 3
Dependent Claim
23 words
The deposition method of claim 1 , wherein the initiation layer consists essentially of a monolayer of the first and second initiation precursors.
Claim 4
Dependent Claim
25 words
The deposition method of claim 1 , wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.
Claim 5
Dependent Claim
35 words
The deposition method of claim 1 , wherein substantially all of the first portion of the initiation layer is continuous and at least some of the second portion of the initiation layer is not continuous.
Claim 6
Dependent Claim
26 words
The deposition method of claim 1 , wherein the second portion of the initiation layer does not form over the first portion of the initiation layer.
Claim 7
Dependent Claim
39 words
The deposition method of claim 1 , wherein the first portion of the initiation layer forms on an insulative portion of the substrate and the second portion of the initiation layer forms on a conductive portion of the substrate.
Claim 8
Dependent Claim
28 words
The deposition method of claim 1 , wherein the forming the second portion of the initiation layer substantially fills holes in the first portion of the initiation layer.
Claim 9
Dependent Claim
38 words
The deposition method of claim 1 , further comprising contacting the first and second portions of the initiation layer with a deposition precursor and forming a deposition layer on the first and second portions of the initiation layer.
Claim 10
Dependent Claim
37 words
The deposition method of claim 8 , further comprising contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.
Claim 11
Dependent Claim
41 words
A deposition method comprising: simultaneously contacting a substrate with a plurality of initiation precursors; and chemisorbing on the substrate an initiation layer comprising components derived from each of the plurality of initiation precursors, the initiation layer consisting essentially of a monolayer.
Claim 12
Dependent Claim
41 words
A deposition method comprising: simultaneously contacting a substrate with a plurality of initiation precursors; and chemisorbing on the substrate an initiation layer comprising components derived from each of the plurality of initiation precursors, the initiation layer consisting essentially of a monolayer.
Claim 13
Dependent Claim
15 words
The deposition method of claim 10 , wherein the initiation layer consists of a monolayer.
Claim 14
Dependent Claim
46 words
The deposition method of claim 10 , wherein a portion of the initiation layer derived from one of the plurality of initiation precursors forms on the substrate in a region less susceptible to formation of the initiation layer by another of the plurality of initiation precursors.
Claim 15
Dependent Claim
33 words
The deposition method of claim 12 , wherein the portion of the initiation layer derived from the one initiation precursor substantially fills holes in the initiation layer formed by the another initiation precursor.
Claim 16
Dependent Claim
47 words
The deposition method of claim 10 , further comprising contacting the initiation layer with a deposition precursor and forming a deposition layer on one portion of the initiation layer derived from one initiation precursor and on another portion of the initiation layer derived from another initiation precursor.
Claim 17
Dependent Claim
92 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region; and contacting at least a part of the substrate with a second initiation precursor and forming the initiation layer on the second region, but not over the first region.
Claim 18
Dependent Claim
92 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region; and contacting at least a part of the substrate with a second initiation precursor and forming the initiation layer on the second region, but not over the first region.
Claim 19
Dependent Claim
22 words
The deposition method of claim 15 , wherein the initiation layer consists essentially of a monolayer on the first and second region.
Claim 20
Dependent Claim
26 words
The deposition method of claim 15 , wherein the first initiation precursor forms a negligible, if any, amount of the initiation layer on the second region.
Claim 21
Dependent Claim
25 words
The deposition method of claim 15 , wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.
Claim 22
Dependent Claim
27 words
The deposition method of claim 15 , wherein substantially all of the first region is continuous and at least some of the second region is not continuous.
Claim 23
Dependent Claim
22 words
The deposition method of claim 15 , wherein either the first or the second region is insulative and the other is conductive.
Claim 24
Dependent Claim
28 words
The deposition method of claim 15 , wherein the forming the initiation layer on the second region substantially fills holes in the initiation layer on the first region.
Claim 25
Dependent Claim
38 words
The deposition method of claim 15 , further comprising contacting the initiation layer on the first and second regions with a deposition precursor and forming a deposition layer on the initiation layer on the first and second regions.
Claim 26
Dependent Claim
37 words
The deposition method of claim 22 , further comprising contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.
Claim 27
Dependent Claim
77 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor different from the first initiation precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer with a second initiation precursor different from the first initiation precursor and the deposition precursor, and forming a second initiation layer over the substrate.
Claim 28
Dependent Claim
77 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor different from the first initiation precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer with a second initiation precursor different from the first initiation precursor and the deposition precursor, and forming a second initiation layer over the substrate.
Claim 29
Dependent Claim
24 words
The deposition method of claim 24 , wherein the first initiation layer, deposition layer, and second initiation layer each consist essentially of a monolayer.
Claim 30
Dependent Claim
46 words
The deposition method of claim 24 , wherein the contacting with the second initiation precursor further comprises contacting a portion of the substrate on which the first initiation layer did not form and wherein the forming the second initiation layer occurs on at least such portion.
Claim 31
Dependent Claim
22 words
The deposition method of claim 26 , wherein the forming the second initiation layer substantially fills holes in the first initiation layer.
Claim 32
Dependent Claim
108 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor different from the first initiation precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer with a plurality of initiation precursors, at least one of which is different from the first initiation precursor and deposition precursor, and forming a second initiation layer over the substrate. 29 .The deposition method of claim 28 , wherein the first initiation layer, deposition layer, and second initiation layer each consist essentially of a monolayer.
Claim 33
Dependent Claim
20 words
The deposition method of claim 28 , wherein one of the plurality of initiation precursors is the first initiation precursor.
Claim 34
Dependent Claim
18 words
The deposition method of claim 28 , wherein the contacting with the plurality of initiation precursors occurs simultaneously.
Claim 35
Dependent Claim
47 words
The deposition method of claim 28 , wherein the contacting with the plurality of initiation precursors further comprises contacting a portion of the substrate on which the first initiation layer did not form and wherein the forming the second initiation layer occurs on at least such portion.
Claim 36
Dependent Claim
22 words
The deposition method of claim 32 , wherein the forming the second initiation layer substantially fills holes in the first initiation layer.
Claim 37
Dependent Claim
90 words
A deposition method comprising: contacting a first-type surface of a substrate and a second-type surface of a substrate different from the first-type surface with a first initiation precursor and forming an initiation layer substantially selectively on the first-type surface relative to the second-type surface, the first-type surface being different from the second-type surface as to at least one of a surface property and a composition; and contacting the initiation layer with a deposition precursor and forming a deposition layer substantially selectively over the first-type surface relative to the second-type surface.
Claim 38
Dependent Claim
90 words
A deposition method comprising: contacting a first-type surface of a substrate and a second-type surface of a substrate different from the first-type surface with a first initiation precursor and forming an initiation layer substantially selectively on the first-type surface relative to the second-type surface, the first-type surface being different from the second-type surface as to at least one of a surface property and a composition; and contacting the initiation layer with a deposition precursor and forming a deposition layer substantially selectively over the first-type surface relative to the second-type surface.
Claim 39
Dependent Claim
20 words
The deposition method of claim 34 , wherein the initiation layer and deposition layer each consist essentially of a monolayer.
Claim 40
Dependent Claim
27 words
The deposition method of claim 34 , wherein substantially all of the first-type surface is continuous and at least some of the second-type surface is not continuous.
Claim 41
Dependent Claim
25 words
The deposition method of claim 34 , wherein substantially all of the first-type surface is continuous and substantially all of the second-type surface is continuous.
Claim 42
Dependent Claim
19 words
The deposition method of claim 37 , wherein the first-type surface has a common border with the second-type surface.
Claim 43
Dependent Claim
21 words
The deposition method of claim 34 , wherein either the first-or the second-type surface is insulative and the other is conductive.
Claim 44
Dependent Claim
26 words
The deposition method of claim 34 , wherein the first initiation precursor forms a negligible, if any, amount of the initiation layer on the second-type surface.
Claim 45
Dependent Claim
146 words
A deposition method comprising: contacting a first-type surface of a substrate and a second-type surface of the substrate different from the first-type surface with a first initiation precursor forming an initiation layer substantially selectively on the first-type surface relative to the second-type surface, the substantially selective forming leaving holes in the initiation layer and the first-type surface being different from the second-type surface as to at least one of a surface property and a composition; contacting the second-type surface with a second initiation precursor and forming the initiation layer on the second-type surface but not over the first-type surface, the forming the initiation layer on the second-type surface substantially filling the holes in the initiation layer; and contacting the initiation layer on the first-type surface and the second-type surface with a deposition precursor and forming a deposition layer over the first-type surface and the second-type surface.
Claim 46
Dependent Claim
146 words
A deposition method comprising: contacting a first-type surface of a substrate and a second-type surface of the substrate different from the first-type surface with a first initiation precursor forming an initiation layer substantially selectively on the first-type surface relative to the second-type surface, the substantially selective forming leaving holes in the initiation layer and the first-type surface being different from the second-type surface as to at least one of a surface property and a composition; contacting the second-type surface with a second initiation precursor and forming the initiation layer on the second-type surface but not over the first-type surface, the forming the initiation layer on the second-type surface substantially filling the holes in the initiation layer; and contacting the initiation layer on the first-type surface and the second-type surface with a deposition precursor and forming a deposition layer over the first-type surface and the second-type surface.
Claim 47
Dependent Claim
20 words
The deposition method of claim 41 , wherein the initiation layer and deposition layer each consist essentially of a monolayer.
Claim 48
Dependent Claim
26 words
The deposition method of claim 41 , wherein the first initiation precursor forms a negligible, if any, amount of the initiation layer on the second-type surface.
Claim 49
Dependent Claim
25 words
The deposition method of claim 41 , wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.
Claim 50
Dependent Claim
16 words
The deposition method of claim 41 , wherein substantially all of the first-type surface is continuous.
Claim 51
Dependent Claim
21 words
The deposition method of claim 41 , wherein either the first-or the second-type surface is insulative and the other is conductive.
Claim 52
Dependent Claim
23 words
The deposition method of claim 41 , wherein the contacting with the first initiation precursor and with the second initiation precursor occur separately.
Claim 53
Dependent Claim
37 words
The deposition method of claim 41 , further comprising contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-30 | 2006-04-01 | 2006-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-30 | 2010-04-01 | 2010-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-30 | 2014-04-01 | 2014-10-01 | $7700.00 | Window Closed / Lapsed |