Patent US6451695B2 successfully refreshed from Google Patents.
US6451695B2
Expired / Lapsed
US
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Radical-assisted sequential CVD
Assignee: Aixtron Inc
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Filing: 2000-12-22
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Granted: 2002-09-17
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Expires: 2020-12-22
Abstract
Abstract A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Inventors
- 👤 Ofer Sneh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/4554; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
110 words
A method for depositing metal on a surface of a substrate, comprising steps of: (a) preparing the surface to be terminated with first ligands reactive with a precursor gas or vapor bearing the metal to be deposited; (b) depositing a first layer of the metal by flowing the precursor gas or vapor bearing the metal over the surface of the substrate; (c) exposing the first layer of the metal deposited in step (b) to a radicalized species that terminates the first layer with second ligands reactive with the precursor gas or vapor bearing the metal to be deposited; and (d) repeating steps (b) and (c) to build a metal film.
Claim 2
Independent Claim
110 words
A method for depositing metal on a surface of a substrate, comprising steps of: (a) preparing the surface to be terminated with first ligands reactive with a precursor gas or vapor bearing the metal to be deposited; (b) depositing a first layer of the metal by flowing the precursor gas or vapor bearing the metal over the surface of the substrate; (c) exposing the first layer of the metal deposited in step (b) to a radicalized species that terminates the first layer with second ligands reactive with the precursor gas or vapor bearing the metal to be deposited; and (d) repeating steps (b) and (c) to build a metal film.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the radicalized species is hydrogen.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is tungsten hexafluoride and the metal deposited is tungsten.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the precursor bearing the metal is tantalum pentachloride and the metal deposited is tantalum.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is one of trimethylaluminum or aluminum trichloride and the metal deposited is aluminum.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is one of titanium tetrachloride or titanium tetraiodide and the metal deposited is titanium.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is molybdenum hexafluoride and the metal deposited is molybdenum.
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is zinc dichloride and the metal deposited is zinc.
Claim 10
Dependent Claim
23 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is hafnium tetrachloride and the metal deposited is hafnium.
Claim 11
Dependent Claim
23 words
The method of claim 1 wherein the precursor gas or vapor bearing the metal is niobium pentachloride and the metal deposited is niobium.
Claim 12
Dependent Claim
24 words
The method of claim 1 wherein the precursor gas or vapor is copper chloride Cu 3 Cl 3 and the metal deposited is copper.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-16 | 2006-03-18 | 2006-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-16 | 2010-03-18 | 2010-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-16 | 2014-03-18 | 2014-09-17 | $7700.00 | Window Closed / Lapsed |