Patent US6448648B1 successfully refreshed from Google Patents.
US6448648B1
Expired / Lapsed
US
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Metalization of electronic semiconductor devices
Assignee: United States Department of the Navy
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Filing: 1997-03-27
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Granted: 2002-09-10
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Expires: 2017-03-27
Abstract
Abstract An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationghip to each other, the source and the drain comprising Pd/barrier/Au layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170° C. for ¼-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.
Inventors
- 👤 John Bradley Boos
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/015; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/4735; H10D30/4738; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10D64/00; H10D64/01; H10D64/011; H10D64/0116
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
42 words
A semiconductor electronic device comprising a simiconductor base; an electron conducting region disposed in or constituting said base; and an ohmic contact disposed on said base, said ohmic contact comprises Pd/barrier/Au layers, with said palladium layer being in contact with said base.
Claim 2
Dependent Claim
42 words
A semiconductor electronic device comprising a simiconductor base; an electron conducting region disposed in or constituting said base; and an ohmic contact disposed on said base, said ohmic contact comprises Pd/barrier/Au layers, with said palladium layer being in contact with said base.
Claim 3
Dependent Claim
28 words
The device of claim 1 wherein thickness of said palladium layer is 10-1000Å, thickness of said barrier layer is 50-1000Å, and thickness of said gold layer is 100-5000Å.
Claim 4
Dependent Claim
28 words
The device of claim 1 wherein thickness of said palladium layer is 50-500Å, thickness of said barrier layer is 100-500Å, and thickness of said gold layer is 200-2000Å.
Claim 5
Dependent Claim
29 words
The device of claim 3 wherein said barrier layer is selected from the group consisting of platinum, titanium, titanium tungsten, platinum silicide, titanium carbide, titanium silicide, and mixtures thereof.
Claim 6
Dependent Claim
23 words
The device of claim 2 wherein said base comprises semiconductors selected from the group consisting of Group III-V elements of the Periodic Table.
Claim 7
Dependent Claim
31 words
The device of claim 5 wherein said base includes an AlSb barrier and an InAs channel, resistance between said contact and said base is 0.01-0.5 ohm-mm at 0 V GS .
Claim 8
Dependent Claim
49 words
A semiconductor electronic device comprising a semiconductor base; an electron conducting region disposed in or constituting said base; and a source and a drain disposed on said base in spaced relationship, said source and said drain comprising Pd/barrier/Au layers, with said palladium layer being in contact with said base.
Claim 9
Dependent Claim
49 words
A semiconductor electronic device comprising a semiconductor base; an electron conducting region disposed in or constituting said base; and a source and a drain disposed on said base in spaced relationship, said source and said drain comprising Pd/barrier/Au layers, with said palladium layer being in contact with said base.
Claim 10
Dependent Claim
43 words
The device of claim 7 wherein thickness of said palladium layer is 10-1000Å, thickness of said gold barrier layer is 50-1000Å, and thickness of said gold layer is 100-5000Å, and spacing between said source and said drain is up to about 2 microns.
Claim 11
Dependent Claim
28 words
The device of claim 7 wherein thickness of said palladium layer is 50-500Å, thickness of said barrier layer is 100-500Å, and thickness of said gold layer is 200-2000Å.
Claim 12
Dependent Claim
29 words
The device of claim 9 wherein said barrier layer is selected from the group consisting of platinum, titanium, titanium tungsten, platinum silicide, titanium carbide, titanium silicide, and mixtures thereof.
Claim 13
Dependent Claim
23 words
The device of claim 8 wherein said base comprises semiconductors selected from the group consisting of group III-V elements of the Periodic Table.
Claim 14
Dependent Claim
70 words
The device of claim 9 wherein said base includes an AlSb buffer layer, InAs layer on said AlSb buffer layer, another AlSb layer on said InAs layer, GaSb layer on said another AlSb layer, InGaAs layer on said GaSb layer and in contact with palladium, a Te layer in the upper portion of said AlSb buffer layer, and another Te layer in the lower portion of said another AlSb layer.
Claim 15
Dependent Claim
62 words
A semiconductor electronic device comprising a semiconductor base; a channel disposed in said base; a source and a drain disposed on said base in spaced relationship, said source and said drain comprise Pd/barrier/Au layers, with said palladium layer being in contact with said base; and a gate disposed on said base and spaced between said source and drain in spaced relationship thereto.
Claim 16
Dependent Claim
62 words
A semiconductor electronic device comprising a semiconductor base; a channel disposed in said base; a source and a drain disposed on said base in spaced relationship, said source and said drain comprise Pd/barrier/Au layers, with said palladium layer being in contact with said base; and a gate disposed on said base and spaced between said source and drain in spaced relationship thereto.
Claim 17
Dependent Claim
43 words
The device of claim 13 wherein thickness of said palladium layer is 10-1000Å, thickness of said gold barrier layer is 50-1000Å, and thickness of said gold layer is 100-5000Å; and spacing between said source and said drain is up to about 2 microns.
Claim 18
Dependent Claim
39 words
The device of claim 13 wherein thickness of said palladium layer is 50-500Å, thickness of said gold barrier layer is 100-500Å, and thickness of said gold layer is 200-2000Å; and spacing between said source and drain is 0.5-1.5 microns.
Claim 19
Dependent Claim
30 words
The device of claim 15 wherein said gold barrier layer is selected from the group consisting of platinum, titanium, titanium tungsten, platinum silicide, titanium carbide, titanium silicide, and mixtures thereof.
Claim 20
Dependent Claim
16 words
The device of claim 15 wherein said base includes an AlSb barrier and an InAs channel.
References Cited (Backward Citations)
US5430310A
Cited
US5373175A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-09-09 | 2006-03-11 | 2006-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-09 | 2010-03-11 | 2010-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-09 | 2014-03-11 | 2014-09-10 | $7700.00 | Window Closed / Lapsed |