US5373175A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic electrode and a light emitting device
Assignee: Sony Corp
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Filing: 1993-10-18
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Granted: 1994-12-13
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Expires: 2013-10-18
Abstract
Abstract An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer; and providing a metal layer on the layer made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.
Inventors
- 👤 Masafumi Ozawa
- 👤 Satoshi Ito
- 👤 Fumiyo Narui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:36
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/30; H01S5/32; H01S5/327; H10D; H10D64/00; H10D64/01; H10D64/011; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/816; H10H20/8162; H10H20/822; H10H20/823; H10H20/83; H10H20/832
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
65 words
An ohmic electrode comprising: a layer selected from the group of Pd or an alloy containing Pd in contact with a p-type II-VI compound semiconductor; a metal layer provided on said layer selected from the group of Pd an alloy containing Pd, and wherein said layer selected from the group of Pd or an alloy containing Pd has a thickness of 4 to 15 nm.
Claim 2
Dependent Claim
65 words
An ohmic electrode comprising: a layer selected from the group of Pd or an alloy containing Pd in contact with a p-type II-VI compound semiconductor; a metal layer provided on said layer selected from the group of Pd an alloy containing Pd, and wherein said layer selected from the group of Pd or an alloy containing Pd has a thickness of 4 to 15 nm.
Claim 3
Dependent Claim
99 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer; a p-type third II-VI compound semiconductor layer provided on said second p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnTe.
Claim 4
Dependent Claim
99 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer; a p-type third II-VI compound semiconductor layer provided on said second p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnTe.
Claim 5
Dependent Claim
29 words
The light emitting device according to claim 2 further comprising an active layer between said n-type first II-VI compound semiconductor layer and said p-type second II-VI compound semiconductor layer.
Claim 6
Dependent Claim
28 words
The light emitting device according to claim 2 wherein said n-type first II-VI compound semiconductor layer and said p-type second II-VI compound semiconductor layer are made of ZnMgSSe.
Claim 7
Dependent Claim
28 words
The light emitting device according to claim 2 wherein said n-type first II-VI compound semiconductor layer and said p-type second II-VI compound semiconductor layer are made of ZnSe.
Claim 8
Dependent Claim
103 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer; a p-type third II-VI compound semiconductor layer provided on said second p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnSe x Te 1-X .
Claim 9
Dependent Claim
103 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer; a p-type third II-VI compound semiconductor layer provided on said second p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnSe x Te 1-X .
Claim 10
Dependent Claim
99 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer: a p-type third II-VI compound semiconductor layer provided on said p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnSe/ZnTe superlattice.
Claim 11
Dependent Claim
99 words
A light emitting device comprising: an n-type first II-VI compound semiconductor layer; a p-type second II-VI compound semiconductor layer provided on said n-type first II-VI compound semiconductor layer; a first electrode electrically connected to said n-type first II-VI compound semiconductor layer: a p-type third II-VI compound semiconductor layer provided on said p-type second II-VI compound semiconductor layer; a second electrode in contact with said p-type third II-VI compound semiconductor layer and said second electrode selected from the group of Pd or an alloy containing Pd, and wherein said p-type third II-VI compound semiconductor layer is made of ZnSe/ZnTe superlattice.
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