US6407367B1
Expired / Lapsed
US
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Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
Assignee: Canon Inc
•
Filing: 1998-12-21
•
Granted: 2002-06-18
•
Expires: 2018-12-21
Abstract
Abstract A novel heat treatment apparatus is provided which comprises a first tube, a second tube placed therein, and a heater. A semiconductor article is heat treated in the second tube in an atmospheric gas. At least an internal face of the second tube is constructed from non-silicon oxide, and the first tube is constructed from vitreous silica. In this way, hydrogen gas is fed to a wafer without passing over a face comprised of silicon oxide heated to a high temperature. This apparatus prevents metal contamination of the wafer by fused quartz tube as the contamination source and also prevents etching of silicon by reaction of silicon oxide and silicon.
Inventors
- 👤 Masataka Ito
- 👤 Nobuhiko Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:01
CPC Classifications
H; H10; H10P; H10P32/00; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B33/00; C30B33/005; H10P14/00; H10P14/60; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 79
Claim 1
Independent Claim
119 words
A heat treatment apparatus comprising: a first tube, a second tube placed therein, a heater, and a third tube provided between the first tube and the heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of non-silicon oxide, wherein a gas flow path is constructed to introduce a gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to a high temperature by the heater, and wherein a purge gas is introduced into an interspace between the third tube and the first tube.
Claim 2
Dependent Claim
119 words
A heat treatment apparatus comprising: a first tube, a second tube placed therein, a heater, and a third tube provided between the first tube and the heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of non-silicon oxide, wherein a gas flow path is constructed to introduce a gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to a high temperature by the heater, and wherein a purge gas is introduced into an interspace between the third tube and the first tube.
Claim 3
Dependent Claim
23 words
The heat treatment apparatus according to claim 1 , wherein the vitreous silica is fused silica, and the non-silicon oxide is silicon carbide.
Claim 4
Dependent Claim
30 words
The heat treatment apparatus according to claim 1 , wherein the non-silicon oxide is selected from the group consisting of silicon, silicon carbide, silicon nitride, aluminum oxide, and boron nitride.
Claim 5
Dependent Claim
22 words
The heat treatment apparatus according to claim 1 , wherein the second tube has a surface coated with a silicon carbide film.
Claim 6
Dependent Claim
26 words
The heat treatment apparatus according to claim 1 , wherein the face comprised of silicon oxide is heated at a temperature of 900° C. or higher.
Claim 7
Dependent Claim
26 words
The heat treatment apparatus according to claim 1 , wherein the face comprised of silicon oxide is heated at a temperature of 1000° C. or higher.
Claim 8
Dependent Claim
29 words
The heat treatment apparatus according to claim 1 , wherein the gas is hydrogen gas and is introduced together with or without an inert gas into the second tube.
Claim 9
Dependent Claim
22 words
The heat treatment apparatus according to claim 1 , wherein the second tube is extended to an upstream side of treatment space.
Claim 10
Dependent Claim
53 words
The heat treatment apparatus according to claim 1 , wherein the gas is hydrogen gas, and an inlet for the hydrogen gas into the second tube is provided outside the treatment space, and a vent for hydrogen gas from the second tube is provided outside the treatment space and reverse to the inlet.
Claim 11
Dependent Claim
45 words
The heat treatment apparatus according to claim 9 , wherein the gas outlet is open to the inside of the first tube, and a vent is provided on the first tube to flow the hydrogen gas through the inside space for discharging the hydrogen gas.
Claim 12
Dependent Claim
35 words
The heat treatment apparatus according to claim 9 , wherein a flow preventing means is provided at the discharge portion to prevent a flow of the gas from the first tube to the second tube.
Claim 13
Dependent Claim
16 words
The heat treatment apparatus according to claim 1 , wherein the third tube is tightly closable.
Claim 14
Dependent Claim
23 words
The heat treatment apparatus according to claim 1 , wherein the surface at least of the third tube is comprised of non-silicon oxide.
Claim 15
Dependent Claim
18 words
The heat treatment apparatus according to claim 1 , wherein the third tube is made of silicon carbide.
Claim 16
Dependent Claim
21 words
The heat treatment apparatus according to claim 1 , wherein the second tube and the third tube are both closable tightly.
Claim 17
Dependent Claim
32 words
The heat treatment apparatus according to claim 1 , wherein a support having a non-silicon oxide surface and a heat barrier having a silicon oxide surface are placed in the second tube.
Claim 18
Dependent Claim
23 words
The heat treatment apparatus according to claim 1 , wherein the heater is provided above a heat barrier placed in the second tube.
Claim 19
Dependent Claim
40 words
The heat treatment apparatus according to claim 1 , wherein the gas is hydrogen gas, and the hydrogen gas is introduced from a lower portion of the second tube, and is discharged from a lower portion of the first tube.
Claim 20
Dependent Claim
38 words
The heat treatment apparatus according to claim 1 , wherein a purge gas is introduced from the outside through the bottom of the first tube, and is discharged from the outside through the top of the first tube.
Claim 21
Dependent Claim
157 words
A heat treatment apparatus comprising: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the gas to the second tube provided below the heater, a vent provided at a bottom portion of the first tube for discharging the gas from inside of the first tube, a closable third tube having a non-silicon oxide surface provided outside the first tube, a purge gas inlet provided at a bottom portion of the third tube, and a purge gas vent provided at a top portion of the third tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide surface and is closable, and wherein the heater is provided at a higher level than a heat barrier placed in the second tube.
Claim 22
Dependent Claim
157 words
A heat treatment apparatus comprising: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the gas to the second tube provided below the heater, a vent provided at a bottom portion of the first tube for discharging the gas from inside of the first tube, a closable third tube having a non-silicon oxide surface provided outside the first tube, a purge gas inlet provided at a bottom portion of the third tube, and a purge gas vent provided at a top portion of the third tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide surface and is closable, and wherein the heater is provided at a higher level than a heat barrier placed in the second tube.
Claim 23
Dependent Claim
16 words
The heat treatment apparatus according to claim 20 , wherein the heat barrier comprises foamed quartz.
Claim 24
Dependent Claim
22 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus set forth in claim 1 .
Claim 25
Dependent Claim
17 words
The heat treatment process according to claim 22 , wherein the semiconductor article has a silicon body.
Claim 26
Dependent Claim
29 words
The heat treatment process according to claim 22 , wherein the semiconductor article is heat-treated in a hydrogen containing reducing atmosphere at a temperature not lower than 900° C.
Claim 27
Dependent Claim
23 words
The heat treatment process according to claim 24 , wherein the semiconductor article is heat-treated at a temperature not lower than 1000° C.
Claim 28
Dependent Claim
120 words
A heat treatment process for heat-treating a semiconductor article by means of a heat treatment apparatus which comprises: a first tube, a second tube placed therein, and a heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of non-silicon oxide, wherein a gas flow path is constructed to introduce a gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to a high temperature by the heater, wherein the semiconductor article has a silicon body, and wherein the semiconductor article is an SOI substrate.
Claim 29
Dependent Claim
120 words
A heat treatment process for heat-treating a semiconductor article by means of a heat treatment apparatus which comprises: a first tube, a second tube placed therein, and a heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of non-silicon oxide, wherein a gas flow path is constructed to introduce a gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to a high temperature by the heater, wherein the semiconductor article has a silicon body, and wherein the semiconductor article is an SOI substrate.
Claim 30
Dependent Claim
18 words
The heat treatment process according to claim 26 , wherein the semiconductor article is a bonding SOI substrate.
Claim 31
Dependent Claim
22 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus set forth in claim 20 .
Claim 32
Dependent Claim
17 words
The heat treatment process according to claim 28 , wherein the semiconductor article has a silicon body.
Claim 33
Dependent Claim
29 words
The heat treatment process according to claim 28 , wherein the semiconductor article is heat-treated in a hydrogen containing reducing atmosphere at a temperature not lower than 900° C.
Claim 34
Dependent Claim
23 words
The heat treatment process according to claim 30 , wherein the semiconductor article is heat-treated at a temperature not lower than 1000° C.
Claim 35
Dependent Claim
146 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus which comprises: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the gas to the second tube provided below the heater, and a vent provided at a bottom portion of the first tube for discharging the was from inside of the first tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide surface and is closable, wherein the heater is provided at a higher level than a heat barrier placed in the second tube, wherein the semiconductor article has a silicon body, and wherein the semiconductor article is an SOI substrate.
Claim 36
Dependent Claim
146 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus which comprises: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the gas to the second tube provided below the heater, and a vent provided at a bottom portion of the first tube for discharging the was from inside of the first tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide surface and is closable, wherein the heater is provided at a higher level than a heat barrier placed in the second tube, wherein the semiconductor article has a silicon body, and wherein the semiconductor article is an SOI substrate.
Claim 37
Dependent Claim
18 words
The heat treatment process according to claim 32 , wherein the semiconductor article is a bonding SOI substrate.
Claim 38
Dependent Claim
62 words
A process for producing a semiconductor article comprising the steps of: bonding a first base plate and a second base plate, removing an unnecessary portion of the first base plate from the second base plate, and heat-treating a silicon body on the second base plate in a hydrogen-containing reducing atmosphere by means of the heat treatment apparatus according to claim 1 .
Claim 39
Dependent Claim
30 words
The process according to claim 34 , wherein a separation layer is formed in the first base plate, and the unnecessary portion is removed by separation at the separation layer.
Claim 40
Dependent Claim
31 words
The process according to claim 34 , wherein the unnecessary portion of the first base plate is removed by a method selected from the group consisting of polishing, grinding, and etching.
Claim 41
Dependent Claim
15 words
The process according to claim 34 , wherein the silicon body is an epitaxial layer.
Claim 42
Dependent Claim
76 words
The process according to claim 34 , wherein the process comprises forming a porous layer on a main face of the first base plate, the first base plate being a silicon single crystal base plate, forming a single crystal silicon layer on the porous layer, bonding the main face of the silicon single crystal base plate to the surface of the second base plate, and removing the porous layer to expose the single crystal silicon layer.
Claim 43
Dependent Claim
62 words
A process for producing a semiconductor article comprising the steps of: bonding a first base plate and a second base plate, removing an unnecessary portion of the first base plate from the second base plate, and heat-treating a silicon body on the second base plate in a hydrogen-containing reducing atmosphere by means of the heat treatment apparatus according to claim 22 .
Claim 44
Dependent Claim
30 words
The process according to claim 39 , wherein a separation layer is formed in the first base plate, and the unnecessary portion is removed by separation at the separation layer.
Claim 45
Dependent Claim
31 words
The process according to claim 39 , wherein the unnecessary portion of the first base plate is removed by a method selected from the group consisting of polishing, grinding, and etching.
Claim 46
Dependent Claim
15 words
The process according to claim 39 , wherein the silicon body is an epitaxial layer.
Claim 47
Dependent Claim
76 words
The process according to claim 39 , wherein the process comprises forming a porous layer on a main face of the first base plate, the first base plate being a silicon single crystal base plate, forming a single crystal silicon layer on the porous layer, bonding the main face of the silicon single crystal base plate to the surface of the second base plate, and removing the porous layer to expose the single crystal silicon layer.
Claim 48
Dependent Claim
108 words
A heat treatment apparatus for heating a semiconductor article to 1000° C. or more in a hydrogen-containing reducing atmosphere comprising: a first tube, a second tube placed therein, and a heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of silicon carbide, and wherein a gas flow path is constructed to introduce a hydrogen gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to 1000° C. or more by the heater.
Claim 49
Dependent Claim
108 words
A heat treatment apparatus for heating a semiconductor article to 1000° C. or more in a hydrogen-containing reducing atmosphere comprising: a first tube, a second tube placed therein, and a heater, wherein the first tube is tightly closable and is made of vitreous silica having an impact strength higher than that of the second tube, wherein the second tube has at least an internal face comprised of silicon carbide, and wherein a gas flow path is constructed to introduce a hydrogen gas into a treatment space in the second tube without passing over a face comprised of silicon oxide heated to 1000° C. or more by the heater.
Claim 50
Dependent Claim
16 words
The heat treatment apparatus according to claim 44 , wherein the vitreous silica is fused quartz.
Claim 51
Dependent Claim
30 words
The heat treatment apparatus according to claim 44 , wherein the non-silicon oxide is selected from the group consisting of silicon, silicon carbide, silicon nitride, aluminum oxide, and boron nitride.
Claim 52
Dependent Claim
22 words
The heat treatment apparatus according to claim 44 , wherein the second tube has a surface coated with a silicon carbide film.
Claim 53
Dependent Claim
24 words
The heat treatment apparatus according to claim 44 , wherein the hydrogen gas is introduced together with an inert gas into the second tube.
Claim 54
Dependent Claim
22 words
The heat treatment apparatus according to claim 44 , wherein the second tube is extended to an upstream side of treatment space.
Claim 55
Dependent Claim
47 words
The heat treatment apparatus according to claim 44 , wherein an inlet for the hydrogen gas to the second tube is provided outside the treatment space, and a vent for hydrogen gas from the second tube is provided outside the treatment space and reverse to the inlet.
Claim 56
Dependent Claim
45 words
The heat treatment apparatus according to claim 50 , wherein the gas outlet is open to the inside of the first tube, and a vent is provided on the first tube to flow the hydrogen gas through the inside space for discharging the hydrogen gas.
Claim 57
Dependent Claim
35 words
The heat treatment apparatus according to claim 50 , wherein a flow preventing means is provided at the discharge portion to prevent a flow of the gas from the first tube to the second tube.
Claim 58
Dependent Claim
22 words
The heat treatment apparatus according to claim 44 , wherein a third tube is provided between the first tube and the heater.
Claim 59
Dependent Claim
16 words
The heat treatment apparatus according to claim 53 , wherein the third tube is tightly closable.
Claim 60
Dependent Claim
23 words
The heat treatment apparatus according to claim 53 , wherein the surface at least of the third tube is comprised of non-silicon oxide.
Claim 61
Dependent Claim
18 words
The heat treatment apparatus according to claim 53 , wherein the third tube is made of silicon carbide.
Claim 62
Dependent Claim
26 words
The heat treatment apparatus according to claim 53 , wherein a purge gas is introduced into an interspace between the third tube and the first tube.
Claim 63
Dependent Claim
21 words
The heat treatment apparatus according to claim 53 , wherein the second tube and the third tube are both closable tightly.
Claim 64
Dependent Claim
32 words
The heat treatment apparatus according to claim 44 , wherein a support having a non-silicon oxide surface and a heat barrier having a silicon oxide surface are placed in the second tube.
Claim 65
Dependent Claim
23 words
The heat treatment apparatus according to claim 44 , wherein the heater is provided above a heat barrier placed in the second tube.
Claim 66
Dependent Claim
34 words
The heat treatment apparatus according to claim 44 , wherein the hydrogen gas is introduced from a lower portion of the second tube, and is discharged from a lower portion of the first tube.
Claim 67
Dependent Claim
38 words
The heat treatment apparatus according to claim 44 , wherein a purge gas in introduced from the outside through the bottom of the first tube, and is discharged from the outside through the top of the first tube.
Claim 68
Dependent Claim
229 words
A heat treatment apparatus for heating a semiconductor article to 1000° C. or more in a hydrogen-containing reducing atmosphere comprising: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the hydrogen gas in the second tube provided below the heater, and a vent provided at a bottom portion of the first tube for discharging the gas from inside of the first tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide inner surface and is closable, wherein the heater is provided at a higher level than a heat barrier having a silicon oxide surface placed in the second tube so as not to heat the heat barrier to 1000° C. or more at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide inner surface and is closable, wherein the heater is provided at a higher level than a heat barrier having a silicon oxide surface placed in the second tube so as not to heat the heat barrier to 1000° C. or more, and wherein the semiconductor article is an SOI substrate.
Claim 69
Dependent Claim
229 words
A heat treatment apparatus for heating a semiconductor article to 1000° C. or more in a hydrogen-containing reducing atmosphere comprising: a first tube, a second tube placed therein, a heater, a gas inlet for introducing the hydrogen gas in the second tube provided below the heater, and a vent provided at a bottom portion of the first tube for discharging the gas from inside of the first tube, wherein a hole for communicating the second tube to the first tube is provided at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide inner surface and is closable, wherein the heater is provided at a higher level than a heat barrier having a silicon oxide surface placed in the second tube so as not to heat the heat barrier to 1000° C. or more at a top portion of the second tube, wherein the first tube is constructed from fused quartz and is closable, wherein the second tube has a non-silicon oxide inner surface and is closable, wherein the heater is provided at a higher level than a heat barrier having a silicon oxide surface placed in the second tube so as not to heat the heat barrier to 1000° C. or more, and wherein the semiconductor article is an SOI substrate.
Claim 70
Dependent Claim
54 words
The heat treatment apparatus according to claim 63 , wherein a closable third tube having a non-silicon oxide surface is provided outside the first tube, a purge gas inlet is provided at a bottom portion of the third tube, and a purge gas vent is provided at a top portion of the third tube.
Claim 71
Dependent Claim
16 words
The heat treatment apparatus according to claim 63 , wherein the heat barrier comprises foamed quartz.
Claim 72
Dependent Claim
22 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus set forth in claim 44 .
Claim 73
Dependent Claim
17 words
The heat treatment process according to claim 66 , wherein the semiconductor article has a silicon body.
Claim 74
Dependent Claim
17 words
The heat treatment process according to claim 67 , wherein the semiconductor article is an SOI substrate.
Claim 75
Dependent Claim
18 words
The heat treatment process according to claim 68 , wherein the semiconductor article is a bonding SOI substrate.
Claim 76
Dependent Claim
22 words
A heat treatment process for heat-treating a semiconductor article by means of the heat treatment apparatus set forth in claim 63 .
Claim 77
Dependent Claim
17 words
The heat treatment process according to claim 70 , wherein the semiconductor article has a silicon body.
Claim 78
Dependent Claim
17 words
The heat treatment process according to claim 71 , wherein the semiconductor article is an SOI substrate.
Claim 79
Dependent Claim
18 words
The heat treatment process according to claim 72 , wherein the semiconductor article is a bonding SOI substrate.
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