US5225378A
Expired / Lapsed
US
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Method of forming a phosphorus doped silicon film
Assignee: Tokyo Electron Ltd
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Filing: 1991-10-15
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Granted: 1993-07-06
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Expires: 2011-10-15
Abstract
Abstract Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500° C. Si 2 H 6 and PH 3 are introduced into the reaction tube. PH 3 is preheated to 400° C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH 3 carried out in the reaction tube is accelerated.
Inventors
- 👤 Harunori Ushikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:21
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; C30B25/00; C30B25/02; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
176 words
A method of forming a semiconductor film on a substrate, comprising the steps of: preparing first and second process gases, each of which provides a component of the film upon decomposition, the second process gas having a thermal decomposition temperature higher than that of the first process gas; heating a process chamber by irradiating the process chamber with heat from a first heating resistor at an appropriate temperature for decomposing the first process gas; loading the substrate in the process chamber; supplying the first process gas into the process chamber through a first conduit; supplying the second process gas into the process chamber through a second conduit; heating the second process gas in the second conduit by irradiating the second conduit with heat from a second heating resistor before introducing it into the process chamber; and reacting in the process chamber the component of the film derived from the first process gas upon decomposition with the other component of the film derived from the second process gas upon decomposition, thereby forming the film on the substrate.
Claim 2
Independent Claim
176 words
A method of forming a semiconductor film on a substrate, comprising the steps of: preparing first and second process gases, each of which provides a component of the film upon decomposition, the second process gas having a thermal decomposition temperature higher than that of the first process gas; heating a process chamber by irradiating the process chamber with heat from a first heating resistor at an appropriate temperature for decomposing the first process gas; loading the substrate in the process chamber; supplying the first process gas into the process chamber through a first conduit; supplying the second process gas into the process chamber through a second conduit; heating the second process gas in the second conduit by irradiating the second conduit with heat from a second heating resistor before introducing it into the process chamber; and reacting in the process chamber the component of the film derived from the first process gas upon decomposition with the other component of the film derived from the second process gas upon decomposition, thereby forming the film on the substrate.
Claim 3
Dependent Claim
60 words
The method according to claim 1, further comprising the steps of: hermetically covering with a case the second heating resistor and a portion of the second conduit in which the second process gas is heated; connecting exhausting means to the case; and exhausting the case by the exhausting means while heating the second process gas by the second heating resistor.
Claim 4
Dependent Claim
27 words
The method according to claim 2, wherein said portion of the second conduit is made of quartz, and the second heating resistor is located around said portion.
Claim 5
Dependent Claim
21 words
The method according to claim 3, wherein a plurality of substrates are processed in the process chamber at the same time.
Claim 6
Independent Claim
208 words
A method of forming a semiconductor film doped with an impurity on a substrate, comprising the steps of: preparing a first process gas which provides a main component of the film upon decomposition, and a second process gas which provides the impurity upon decomposition, the first and second process gases having different thermal decomposition temperatures; heating a process chamber by irradiating the process chamber with heat from a first heating resistor at an appropriate temperature for decomposing one of the process gases which has a lower thermal decomposition temperature; loading the substrate in the process chamber; supplying said one of the process gases into the process chamber through a first conduit; supplying the other of the process gases which has a higher thermal decomposition temperature into the process chamber through a second conduit; and heating said other process gas in the second conduit by irradiating the second conduit with heat from a second heating resistor before introducing it into the process chamber; and depositing on the substrate the main component of the film derived from the first process gas upon decomposition while doping the main component with the impurity derived from the second process gas upon decomposition, thereby forming the film doped with the impurity on the substrate.
Claim 7
Independent Claim
208 words
A method of forming a semiconductor film doped with an impurity on a substrate, comprising the steps of: preparing a first process gas which provides a main component of the film upon decomposition, and a second process gas which provides the impurity upon decomposition, the first and second process gases having different thermal decomposition temperatures; heating a process chamber by irradiating the process chamber with heat from a first heating resistor at an appropriate temperature for decomposing one of the process gases which has a lower thermal decomposition temperature; loading the substrate in the process chamber; supplying said one of the process gases into the process chamber through a first conduit; supplying the other of the process gases which has a higher thermal decomposition temperature into the process chamber through a second conduit; and heating said other process gas in the second conduit by irradiating the second conduit with heat from a second heating resistor before introducing it into the process chamber; and depositing on the substrate the main component of the film derived from the first process gas upon decomposition while doping the main component with the impurity derived from the second process gas upon decomposition, thereby forming the film doped with the impurity on the substrate.
Claim 8
Dependent Claim
60 words
The method according to claim 5, further comprising the steps of: hermetically covering with a case the second heating resistor and a portion of the second conduit in which said other process gas is heated; connecting exhausting means to the case; and exhausting the case by the exhausting means while heating said other process gas by the second heating resistor.
Claim 9
Dependent Claim
27 words
The method according to claim 6, wherein said portion of the second conduit is made of quartz, and the second heating resistor is located around said portion.
Claim 10
Dependent Claim
24 words
The method according to claim 6, wherein the second process gas has a thermal decomposition temperature higher than that of the first process gas.
Claim 11
Dependent Claim
26 words
The method according to claim 8, wherein the first process gas is Si 2 H 6 , and the second process gas is PH 3 .
Claim 12
Dependent Claim
21 words
The method according to claim 9, wherein the appropriate temperature at which the process chamber is heated is about 500° C.
Claim 13
Dependent Claim
22 words
The method according to claim 10, wherein the PH 3 is heated upon to 200° C. or more in the second conduit.
Claim 14
Dependent Claim
21 words
The method according to claim 11, wherein the PH 3 is heated up to about 400° C. in the second conduit.
Claim 15
Dependent Claim
21 words
The method according to claim 12, wherein a plurality of substrates are processed in the process chamber at the same time.
Claim 16
Dependent Claim
21 words
The method according to claim 3, wherein the first and second process gases are SiH 4 and N 2 O, respectively.
Claim 17
Dependent Claim
18 words
The method according to claim 4, wherein the plurality of substrates are arranged vertically stacked with intervals therebetween.
Claim 18
Dependent Claim
29 words
The method according to claim 15, wherein the first and second conduits are connected to the process chamber at its lower portions, said conduits being close to each other.
Claim 19
Dependent Claim
18 words
The method according to claim 13, wherein the plurality of substrates are arranged vertically stacked with intervals therebetween.
Claim 20
Dependent Claim
29 words
The method according to claim 17, wherein the first and second conduits are connected to the process chamber at its lower portions, said conduits being close to each other.
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