Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
137 words
An integrated circuit comprising an array of standard cells having spare gates interspersed therein, wherein the spare gates are connectable to at least some of the standard cells in the array through at least one set of vias in a fixed array of spare gate vias that elevate fixed lower level spare gate conductors up to an intermediate conductor level that programmably connects to mask-programmable upper level conductors, one or more of the standard cells having conductors that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more of the mask-programmable upper level conductors.
Claim 2
Dependent Claim
137 words
An integrated circuit comprising an array of standard cells having spare gates interspersed therein, wherein the spare gates are connectable to at least some of the standard cells in the array through at least one set of vias in a fixed array of spare gate vias that elevate fixed lower level spare gate conductors up to an intermediate conductor level that programmably connects to mask-programmable upper level conductors, one or more of the standard cells having conductors that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more of the mask-programmable upper level conductors.
Claim 3
Dependent Claim
25 words
The integrated circuit of claim 1 wherein the spare gates are of a type selected from the group consisting of programmable gates and standard cells.
Claim 4
Dependent Claim
25 words
The integrated circuit of claim 1 wherein said mask-programmable upper level conductors comprise two uppermost metal conductor levels of said integrated circuit and associated vias.
Claim 5
Dependent Claim
14 words
The integrated circuit of claim 3 wherein said intermediate conductor level is also programmable.
Claim 6
Dependent Claim
28 words
The integrated circuit of claim 1 wherein said intermediate conductor level is a third metal conductor level, and said upper level conductors comprise fourth-level and fifth-level metal conductors.
Claim 7
Dependent Claim
28 words
The integrated circuit of claim 1 wherein the number of said spare gates is less than 20 percent of the number of gates in said standard cell array.
Claim 8
Dependent Claim
18 words
The integrated circuit of claim 1 wherein said spare gates are located in clusters dispersed in said array.
Claim 9
Dependent Claim
17 words
The integrated circuit of claim 1 wherein said spare gates are located in rows across said array.
Claim 10
Dependent Claim
30 words
The integrated circuit of claim 1 wherein said spare gates are located in rows that are orthogonal to the direction of the rows in which said standard cells are located.
Claim 11
Dependent Claim
30 words
The integrated circuit of claim 1 wherein said spare gates are located in rows that are parallel to the direction of the rows in which said standard cells are located.
Claim 12
Dependent Claim
131 words
An integrated circuit comprising an array of standard cells having spare gates interspersed therein, wherein the spare agates have input and output terminals that are elevated through at least one set of vias in a fixed array of spare gate vias to at least an intermediate conductor level that is above the lowest conductor level used to implement said standard cells, one or more of the standard cells having input and output terminals that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more mask-programmable upper level conductors.
Claim 13
Dependent Claim
131 words
An integrated circuit comprising an array of standard cells having spare gates interspersed therein, wherein the spare agates have input and output terminals that are elevated through at least one set of vias in a fixed array of spare gate vias to at least an intermediate conductor level that is above the lowest conductor level used to implement said standard cells, one or more of the standard cells having input and output terminals that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more mask-programmable upper level conductors.
Claim 14
Dependent Claim
25 words
The integrated circuit of claim 11 wherein the spare gates are of a type selected from the group consisting of programmable gates and standard cells.
Claim 15
Dependent Claim
25 words
The integrated circuit of claim 11 wherein said mask-programmable upper level conductors comprise two uppermost metal conductor levels of said integrated circuit and associated vias.
Claim 16
Dependent Claim
14 words
The integrated circuit of claim 13 wherein said intermediate conductor level is also programmable.
Claim 17
Dependent Claim
28 words
The integrated circuit of claim 11 wherein the number of said spare gates is less than 20 percent of the number of gates in said standard cell array.
Claim 18
Dependent Claim
18 words
The integrated circuit of claim 11 wherein said spare gates are located in clusters dispersed in said array.
Claim 19
Dependent Claim
18 words
The integrated circuit of claim 11 wherein said spare gates are located in continuous rows across said array.
Claim 20
Dependent Claim
30 words
The integrated circuit of claim 11 wherein said spare gates are located in rows that are orthogonal to the direction of the rows in which said standard cells are located.
Claim 21
Dependent Claim
30 words
The integrated circuit of claim 11 wherein said spare gates are located in rows that are parallel to the direction of the rows in which said standard cells are located.
Claim 22
Independent Claim
146 words
A method of making an integrated circuit comprising an array of standard cells having spare gates interspersed therein, by steps comprising connecting at least some of the spare gates to at least some of the standard cells in the array through at least one set of vias in a fixed array of spare gate vias that elevate fixed lower level spare gate conductors up to an intermediate conductor level that programmably connects to mask-programmable upper level conductors, one or more of the standard cells having conductors that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more of the mask-programmable upper level conductors.
Claim 23
Independent Claim
146 words
A method of making an integrated circuit comprising an array of standard cells having spare gates interspersed therein, by steps comprising connecting at least some of the spare gates to at least some of the standard cells in the array through at least one set of vias in a fixed array of spare gate vias that elevate fixed lower level spare gate conductors up to an intermediate conductor level that programmably connects to mask-programmable upper level conductors, one or more of the standard cells having conductors that are also elevated through at least one set of vias in a fixed array of standard cell vias to at least the intermediate conductor level, the spare gates thereby being programmably connectable to one or more of the standard cells using conductors of the intermediate conductor level in association with one or more of the mask-programmable upper level conductors.
Claim 24
Dependent Claim
24 words
The method of claim 20 wherein the spare gates are of a type selected from the group consisting of programmable gates and standard cells.
Claim 25
Dependent Claim
24 words
The method of claim 20 wherein said mask-programmable upper level conductors comprise two uppermost metal conductor levels of said integrated circuit and associated vias.
Claim 26
Dependent Claim
13 words
The method of claim 20 wherein said intermediate conductor level is also programmable.
Claim 27
Dependent Claim
27 words
The method of claim 20 wherein said intermediate conductor level is a third metal conductor level, and said upper level conductors comprise fourth-level and fifth-level metal conductors.
Claim 28
Dependent Claim
27 words
The method of claim 20 wherein the number of said spare gates is less than 20 percent of the number of gates in said standard cell array.
Claim 29
Dependent Claim
18 words
The integrated circuit of claim 20 wherein said spare gates are located in clusters dispersed in said array.
Claim 30
Dependent Claim
18 words
The integrated circuit of claim 20 wherein said spare gates are located in continuous rows across said array.
Claim 31
Dependent Claim
30 words
The integrated circuit of claim 20 wherein said spare gates are located in rows that are orthogonal to the direction of the rows in which said standard cells are located.
Claim 32
Dependent Claim
30 words
The integrated circuit of claim 20 wherein said spare gates are located in rows that are parallel to the direction of the rows in which said standard cells are located.