US6376333B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing flexible display with transfer from auxiliary substrate
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2000-02-14
•
Granted: 2002-04-23
•
Expires: 2020-02-14
Abstract
Abstract A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuyuki Arai
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:13
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P72/00; H10P72/70; H10P72/74; H10P72/7412; H10P72/743; H10P72/7432; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/977
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 2
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 3
Dependent Claim
45 words
The method of claim 1 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said semiconductor device is a liquid crystal display.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said semiconductor device is an EL display.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 8
Independent Claim
135 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; and removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 9
Independent Claim
135 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; and removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 10
Dependent Claim
45 words
The method of claim 7 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 11
Dependent Claim
28 words
The method of claim 7 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 12
Dependent Claim
14 words
The method of claim 7 wherein said semiconductor device is a liquid crystal display.
Claim 13
Dependent Claim
13 words
The method of claim 7 wherein said semiconductor device is an EL display.
Claim 14
Independent Claim
150 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed, wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.
Claim 15
Independent Claim
150 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed, wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.
Claim 16
Dependent Claim
45 words
The method of claim 12 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 17
Dependent Claim
28 words
The method of claim 12 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 18
Dependent Claim
14 words
The method of claim 12 wherein said semiconductor device is a liquid crystal display.
Claim 19
Dependent Claim
13 words
The method of claim 12 wherein said semiconductor device is an EL display.
Claim 20
Dependent Claim
18 words
The method of claim 12 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 21
Independent Claim
144 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer; forming an electrode arrangement over said buffer insulating film; forming a sealing layer over said electrode arrangement; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed, wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.
Claim 22
Independent Claim
144 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer; forming an electrode arrangement over said buffer insulating film; forming a sealing layer over said electrode arrangement; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer by using an etching solvent to peel off said first substrate; and bonding a third substrate comprising a resin to a side from which said peeling layer has been removed, wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.
Claim 23
Dependent Claim
45 words
The method of claim 18 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 24
Dependent Claim
28 words
The method of claim 18 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 25
Dependent Claim
14 words
The method of claim 18 wherein said semiconductor device is a liquid crystal display.
Claim 26
Dependent Claim
13 words
The method of claim 18 wherein said semiconductor device is an EL display.
Claim 27
Dependent Claim
41 words
The method of claim 18 further comprising the step of forming a thin film transistor for an active matrix between said buffer insulating film and said sealing layer, wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 28
Independent Claim
109 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming an electrode arrangement over said buffer insulating film; forming a sealing layer over said electrode arrangement; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 29
Independent Claim
109 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming an electrode arrangement over said buffer insulating film; forming a sealing layer over said electrode arrangement; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 30
Dependent Claim
45 words
The method of claim 24 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 31
Dependent Claim
28 words
The method of claim 24 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 32
Dependent Claim
14 words
The method of claim 24 wherein said semiconductor device is a liquid crystal display.
Claim 33
Dependent Claim
13 words
The method of claim 24 wherein said semiconductor device is an EL display.
Claim 34
Dependent Claim
41 words
The method of claim 24 further comprising the step of forming a thin film transistor for an active matrix between said buffer insulating film and said sealing layer, wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 35
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate comprising quartz by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 36
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising: forming a peeling layer over a first substrate comprising quartz by a silicon oxide base film formation coating solution; forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering; forming a thin film transistor for an active matrix over said buffer insulating film; forming a sealing layer over said thin film transistor; disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; removing said peeling layer to peel off said first substrate; bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.
Claim 37
Dependent Claim
45 words
The method of claim 30 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.
Claim 38
Dependent Claim
28 words
The method of claim 30 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.
Claim 39
Dependent Claim
14 words
The method of claim 30 wherein said semiconductor device is a liquid crystal display.
Claim 40
Dependent Claim
13 words
The method of claim 30 wherein said semiconductor device is an EL display.
Claim 41
Dependent Claim
18 words
The method of claim 30 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 42
Dependent Claim
18 words
The method of claim 7 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.
Claim 43
Dependent Claim
23 words
The method of claim 1 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 44
Dependent Claim
15 words
The method of claim 37 wherein said resin spacer is formed into a columnar shape.
Claim 45
Dependent Claim
23 words
The method of claim 7 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 46
Dependent Claim
15 words
The method of claim 39 wherein said resin spacer is formed into a columnar shape.
Claim 47
Dependent Claim
23 words
The method of claim 12 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 48
Dependent Claim
15 words
The method of claim 41 wherein said resin spacer is formed into a columnar shape.
Claim 49
Dependent Claim
23 words
The method of claim 18 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 50
Dependent Claim
15 words
The method of claim 43 wherein said resin spacer is formed into a columnar shape.
Claim 51
Dependent Claim
23 words
The method of claim 24 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 52
Dependent Claim
15 words
The method of claim 45 wherein said resin spacer is formed into a columnar shape.
Claim 53
Dependent Claim
23 words
The method of claim 30 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.
Claim 54
Dependent Claim
15 words
The method of claim 47 wherein said resin spacer is formed into a columnar shape.
Claim 55
Dependent Claim
23 words
The method of claim 1 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.
Claim 56
Dependent Claim
23 words
The method of claim 7 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.
Claim 57
Dependent Claim
23 words
The method of claim 12 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.
Claim 58
Dependent Claim
13 words
The method of claim 18 wherein said electrode arrangement comprises a pixel electrode.
Claim 59
Dependent Claim
13 words
The method of claim 24 wherein said electrode arrangement comprises a pixel electrode.
Claim 60
Dependent Claim
23 words
The method of claim 30 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.
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