Patent US6370441B1 successfully refreshed from Google Patents.
US6370441B1
Expired / Lapsed
US
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Method and apparatus of correcting design-patterned data, method of electron beam and optical exposure, method of fabricating semiconductor and photomask devices
Assignee: Sony Corp
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Filing: 1998-04-08
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Granted: 2002-04-09
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Expires: 2018-04-08
Abstract
Abstract A method for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising the steps of (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Inventors
- 👤 Hidetoshi Ohnuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:51
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/302; H01J37/3023; H01J37/3026; G; G03; G03F; G03F1/00; G03F1/36; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F7/70483; G03F7/70491; G03F7/705; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3175; H01J2237/31769
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
89 words
A method for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 2
Independent Claim
89 words
A method for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 3
Dependent Claim
158 words
The method according to claim 1 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 4
Independent Claim
141 words
A method of electron beam exposure comprising the steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, and exposing an electron beam resist formed on a substrate with an electron beam on the basis of the obtained pattern data for electron beam exposure, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 5
Independent Claim
141 words
A method of electron beam exposure comprising the steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, and exposing an electron beam resist formed on a substrate with an electron beam on the basis of the obtained pattern data for electron beam exposure, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 6
Dependent Claim
158 words
The method according to claim 3 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the deigned pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 7
Independent Claim
161 words
A method of fabrication of a photomask comprising the steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 8
Independent Claim
161 words
A method of fabrication of a photomask comprising the steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 9
Dependent Claim
158 words
The method according to claim 5 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 10
Dependent Claim
158 words
A photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 11
Dependent Claim
158 words
A photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 12
Dependent Claim
158 words
The photomask according to claim 7 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 13
Independent Claim
197 words
A method of optical exposure comprising the step of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 14
Independent Claim
197 words
A method of optical exposure comprising the step of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 15
Dependent Claim
158 words
The method according to claim 9 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 16
Independent Claim
216 words
A method of fabricating a semiconductor device comprising the steps of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, developing the photo resist to obtain an etching mask, and etching the substrate with the etching mask, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 17
Independent Claim
216 words
A method of fabricating a semiconductor device comprising the steps of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, developing the photo resist to obtain an etching mask, and etching the substrate with the etching mask, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 18
Dependent Claim
158 words
The method according to claim 11 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 19
Dependent Claim
214 words
A semiconductor device obtained by the fabricating steps of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, developing the photo resist to obtain an etching mask, and etching the substrate with the etching mask, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 20
Dependent Claim
214 words
A semiconductor device obtained by the fabricating steps of exposing a photo resist formed on a substrate through a photomask with exposure light to transfer a pattern formed in the photomask to the photo resist formed on the substrate, developing the photo resist to obtain an etching mask, and etching the substrate with the etching mask, said photomask obtained by the fabricating steps of; correcting designed-pattern data obtained by data-processing a plurality of designed patterns, preparing pattern data for electron beam exposure from the corrected designed-pattern data, exposing an electron beam resist formed on a mask blank with an electron beam on the basis of the obtained pattern data for electron beam exposure, forming an etching mask by developing the electron beam resist, and etching the mask blank with the etching mask, wherein the correction of the designed-pattern data comprises the steps of; (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 21
Dependent Claim
159 words
The semiconductor device according to claim 13 , wherein the hierarchical-area-bitmapping procedure in the step (a) includes; (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
Claim 22
Independent Claim
161 words
An apparatus for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising; (1) inputting means for inputting the designed-pattern data, (2) producing means for producing bitmap data, (3) determining means for determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, (4) correcting means for correcting the designed-pattern data, and (5) outputting means for outputting the corrected designed-pattern data, wherein said producing means is for producing hierarchical-area-bitmapped bitmap data from the designed-pattern data, said determining means is for determining a line width of the designed pattern and a space width between the designed pattern and a designed pattern adjacent to said designed pattern on the basis of said hierarchical-area-bitmapped bitmap data, and said correcting means is for correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 23
Independent Claim
161 words
An apparatus for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising; (1) inputting means for inputting the designed-pattern data, (2) producing means for producing bitmap data, (3) determining means for determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, (4) correcting means for correcting the designed-pattern data, and (5) outputting means for outputting the corrected designed-pattern data, wherein said producing means is for producing hierarchical-area-bitmapped bitmap data from the designed-pattern data, said determining means is for determining a line width of the designed pattern and a space width between the designed pattern and a designed pattern adjacent to said designed pattern on the basis of said hierarchical-area-bitmapped bitmap data, and said correcting means is for correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
Claim 24
Dependent Claim
155 words
The apparatus according to claim 15 , wherein said producing means is for, (A) bitmapping the designed-pattern data concerning a predetermined area including the designed pattern, on the basis of a first grid size, to produce a bitmap data on a first grid size level, and (B) producing bitmap data on an (m+1)-th grid size level from a bitmap data on an m-th grid size level which includes an edge of the designed pattern and is included among a plurality of bitmap data obtained on the basis of an m-th grid size, where m=1, 2, 3 . . . M, M is a minimum grid size representing coordinate value, and an (m+1)-th grid size is smaller than an m-th grid size, and repeating the step (B) by incrementing m by 1 until the bitmap data obtained on the basis of the (m+1)-th grid size represents the coordinate value expressing the edge of the designed pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-04-08 | 2005-10-08 | 2006-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-08 | 2009-10-08 | 2010-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-08 | 2013-10-08 | 2014-04-09 | $7700.00 | Window Closed / Lapsed |