US6339022B1
Expired / Lapsed
US
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Method of annealing copper metallurgy
Assignee: GlobalFoundries Inc
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Filing: 1999-12-30
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Granted: 2002-01-15
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Expires: 2019-12-30
Abstract
Abstract A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.
Inventors
- 👤 Arne W. Ballantine
- 👤 Edward C. Cooney, III
- 👤 George A. Dunbar, III
- 👤 Cheryl G. Faltermeier
- 👤 Jeffrey D. Gilbert
- 👤 Ronald D. Goldblatt
- 👤 Nancy A. Greco
- 👤 Stephen E. Greco
- 👤 Frank V. Liucci
- 👤 Glenn Robert Miller
- 👤 Bruce A. Root
- 👤 Andrew H. Simon
- 👤 Anthony K. Stamper
- 👤 Ronald A. Warren
- 👤 David H. Yao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:38
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/277; H10P52/00; H10P52/40; H10P52/403; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
75 words
The method of manufacturing semiconductor devices containing inlaid metallurgy containing metal-based conductors not subject to self-passivation comprising the steps of: depositing metal-based conductors on a semiconductor substrate; coplanarizing said metal-based conductors and an insulator in a chemical environment comprising a passivating agent which prevents excessive removal of said metal-based conductors; and exposing said planarized substrate to a non-oxidizing annealing atmosphere in order to volatilize any reaction products of said passivating agent and said metal-based conductors.
Claim 2
Independent Claim
75 words
The method of manufacturing semiconductor devices containing inlaid metallurgy containing metal-based conductors not subject to self-passivation comprising the steps of: depositing metal-based conductors on a semiconductor substrate; coplanarizing said metal-based conductors and an insulator in a chemical environment comprising a passivating agent which prevents excessive removal of said metal-based conductors; and exposing said planarized substrate to a non-oxidizing annealing atmosphere in order to volatilize any reaction products of said passivating agent and said metal-based conductors.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the intermediate step of cleaning the coplanarized metal-based conductors follows the step of coplanarizing.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said metal-based conductors comprise copper.
Claim 5
Dependent Claim
12 words
The method of claim 3 wherein said passivating agent comprises a triazole.
Claim 6
Dependent Claim
11 words
The method of claim 4 wherein said triazole comprises benzotriazole (BTA).
Claim 7
Dependent Claim
15 words
The method of claim 1 wherein said coplanarization step comprises a chemical-mechanical planarization (CMP) step.
Claim 8
Dependent Claim
18 words
The method of claim 6 wherein said CMP step comprises the use of a slurry comprising nitric acid.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said insulator comprises an oxide of silicon.
Claim 10
Dependent Claim
16 words
The method of claim 1 wherein said non-oxidizing annealing atmosphere comprises an environment of sub-atmospheric pressure.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein said sub-atmospheric pressure is about 50 mTorr.
Claim 12
Dependent Claim
27 words
The method of claim 1 wherein said non-oxidizing annealing atmosphere comprises an environment of increased temperature in a range of about 100° C. to about 425° C.
Claim 13
Dependent Claim
29 words
The method of claim 11 wherein said non-oxidizing annealing atmosphere comprises an environment of increased temperature for a time period of between about 45 seconds to about 75 minutes.
Claim 14
Dependent Claim
43 words
The method of claim 1 wherein said non-oxidizing annealing atmosphere comprises an environment of a vacuum chamber at a pressure of about 50 mTorr at a temperature of between about 325° C. to about 370° C. for about 2 to about 4 minutes.
Claim 15
Dependent Claim
28 words
The method of claim 13 wherein said non-oxidizing annealing atmosphere comprises an environment of a vacuum chamber at a temperature of about 350° C. for about 3 minutes.
Claim 16
Dependent Claim
40 words
The method of claim 1 wherein said non-oxidizing annealing atmosphere comprises an environment comprises a furnace at a temperature between about 100° C. and about 275° C. for a time period of between about 10 minutes to about 75 minutes.
Claim 17
Dependent Claim
27 words
The method of claim 15 wherein said non-oxidizing annealing atmosphere comprises an environment comprises a furnace at a temperature of about 260° C. for about 20 minutes.
Claim 18
Dependent Claim
38 words
The method of claim 15 wherein said non-oxidizing annealing atmosphere comprises an environment includes a step of allowing said substrate to cool to a temperature below that at which said metal-based conductor oxidizes readily in ambient room atmosphere.
Claim 19
Dependent Claim
28 words
The method of claim 17 wherein said non-oxidizing annealing atmosphere comprises an environment in which said cool down step allows said substrate to cool to about 125° C.
Claim 20
Dependent Claim
28 words
The method of claim 1 wherein said non-oxidizing annealing atmosphere comprises an environment including rapid thermal annealing at a temperature of about 425° C. for about 45 seconds.
Claim 21
Dependent Claim
26 words
The method of claim 19 wherein said non-oxidizing annealing atmosphere comprises an environment in which the thermal ramp up rate is about 50° C. per second.
Claim 22
Dependent Claim
26 words
The method of claim 19 wherein said non-oxidizing annealing atmosphere comprises an environment in which the thermal ramp down rate is about 60° C. per second.
Claim 23
Dependent Claim
29 words
The method of claim 19 wherein said non-oxidizing annealing atmosphere comprises an environment which is sustained until said substrate cools to a temperature below that of about 125° C.
Claim 24
Dependent Claim
14 words
The method of claim 1 wherein said substrate contains previously deposited layers of conductors.
Claim 25
Dependent Claim
16 words
The method of claim 1 wherein said exposing step is performed before said substrate is probed.
Claim 26
Dependent Claim
11 words
The method of claim 1 wherein said non-oxidizing atmosphere comprises nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-01-14 | 2005-07-16 | 2006-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-01-14 | 2009-07-16 | 2010-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-01-14 | 2013-07-16 | 2014-01-15 | $7700.00 | Window Closed / Lapsed |