US6096652A
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Method of chemical mechanical planarization using copper coordinating ligands
Assignee: NXP USA Inc
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Filing: 1997-11-03
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Granted: 2000-08-01
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Expires: 2017-11-03
Abstract
Abstract A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).
Inventors
- 👤 David K. Watts
- 👤 Janos Farkas
- 👤 Jason Gomez
- 👤 Chelsea Dang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:58
CPC Classifications
C; C23; C23F; C23F3/00; H; H10; H10P; H10P52/00; H10P52/40; H10P52/403; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10W20/071; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
88 words
A method of chemical mechanical planarization of a semiconductor device, comprising the sequential steps of: providing a semiconductor device; forming a copper layer on the semiconductor device; and planarizing said copper layer with a medium, said medium comprising an abrasive component and a chemical solution, said chemical solution comprising: water; an oxidizing agent; a first coordinating ligand; and a second coordinating ligand, wherein said first coordinating ligand is adapted to form a complex with Cu(I), and the second coordinating ligand is adapted to form a complex with Cu(II).
Claim 2
Independent Claim
88 words
A method of chemical mechanical planarization of a semiconductor device, comprising the sequential steps of: providing a semiconductor device; forming a copper layer on the semiconductor device; and planarizing said copper layer with a medium, said medium comprising an abrasive component and a chemical solution, said chemical solution comprising: water; an oxidizing agent; a first coordinating ligand; and a second coordinating ligand, wherein said first coordinating ligand is adapted to form a complex with Cu(I), and the second coordinating ligand is adapted to form a complex with Cu(II).
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein the first coordinating ligand comprises a material from the group consisting of triazoles, imidazoles, mercaptans, amides, halides, cyanides, thiocyanides, thioethers, and combinations thereof.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein the first coordinating ligand comprises a triazole.
Claim 5
Dependent Claim
12 words
The method of claim 3, wherein the first coordinating ligand comprises 1,2,4-triazole.
Claim 6
Dependent Claim
12 words
The method of claim 3, wherein the first coordinating ligand comprises benzotriazole.
Claim 7
Dependent Claim
12 words
The method of claim 3, wherein the first coordinating ligand comprises imidazole.
Claim 8
Dependent Claim
24 words
The method of claim 1, wherein the second coordinating ligand comprises a material from the group consisting of amines, carboxylates, sulfides, and combinations thereof.
Claim 9
Dependent Claim
21 words
The method of claim 7, wherein the second coordinating ligand comprises a material from the group consisting of amines, and carboxylates.
Claim 10
Dependent Claim
18 words
The method of claim 8, wherein the second coordinating ligand comprises a carboxylate, said carboxylate being a citrate.
Claim 11
Dependent Claim
17 words
The method of claim 8, wherein the second coordinating ligand comprises, an amine, said amine being benzylamine.
Claim 12
Dependent Claim
19 words
The method of claim 1, wherein said chemical solution comprise a slurry in which the abrasive component is provided.
Claim 13
Dependent Claim
23 words
The method of claim 1, wherein the oxidizing agent comprises a material selected from the group consisting of peroxides, persulfates, periodates, and nitrates.
Claim 14
Dependent Claim
12 words
The method of claim 12, wherein the oxidizing agent comprises hydrogen peroxide.
Claim 15
Dependent Claim
20 words
The method of claim 1, wherein the abrasive component comprises a material from the group consisting of silica and alumina.
Claim 16
Independent Claim
119 words
A method of forming a semiconductor device, comprising the steps of: (i) forming a semiconductor structure, comprising the substeps of: providing a substrate; forming an active device on said substrate; depositing a dielectric layer overlying said substrate; forming a via in said dielectric layer; and forming a copper layer over said dielectric layer and in said via; and (ii) planarizing said copper layer with a medium, said medium comprising an abrasive component and a chemical solution, said chemical solution comprising: water; an oxidizing agent; a first coordinating ligand; and a second coordinating ligand, wherein said first coordinating ligand is adapted to form a complex with Cu(I), and the second coordinating ligand is adapted to form a complex with Cu(II).
Claim 17
Independent Claim
119 words
A method of forming a semiconductor device, comprising the steps of: (i) forming a semiconductor structure, comprising the substeps of: providing a substrate; forming an active device on said substrate; depositing a dielectric layer overlying said substrate; forming a via in said dielectric layer; and forming a copper layer over said dielectric layer and in said via; and (ii) planarizing said copper layer with a medium, said medium comprising an abrasive component and a chemical solution, said chemical solution comprising: water; an oxidizing agent; a first coordinating ligand; and a second coordinating ligand, wherein said first coordinating ligand is adapted to form a complex with Cu(I), and the second coordinating ligand is adapted to form a complex with Cu(II).
Claim 18
Dependent Claim
29 words
The method of claim 15, further comprising forming a trench in the dielectric layer, said trench being contiguous with the via, wherein the copper layer extends into the trench.
Claim 19
Dependent Claim
27 words
The method of claim 16, wherein the copper layer is formed by depositing, such that the copper layer is simultaneously deposited in the via and the trench.
Claim 20
Dependent Claim
10 words
The method of claim 15, wherein the substrate comprises silicon.
Claim 21
Dependent Claim
27 words
The method of claim 15, wherein the via extends through the dielectric layer such that the copper layer formed therein makes ohmic contact with the active device.
Claim 22
Dependent Claim
29 words
The method of claim 15, wherein the first coordinating ligand comprises a material from the group consisting of triazoles, imidazoles, mercaptans, amides, halides, cyanides, thiocyanides, thioethers, and combinations thereof.
Claim 23
Dependent Claim
13 words
The method of claim 20, wherein the first coordinating ligand comprises a triazole.
Claim 24
Dependent Claim
12 words
The method of claim 21, wherein the first coordinating ligand comprises 1,2,4-triazole.
Claim 25
Dependent Claim
12 words
The method of claim 20, wherein the first coordinating ligand comprises benzotriazole.
Claim 26
Dependent Claim
12 words
The method of claim 20, wherein the first coordinating ligand comprises imidazole.
Claim 27
Dependent Claim
24 words
The method of claim 15, wherein the second coordinating ligand comprises a material from the group consisting of amines, carboxylates, sulfides, and combinations thereof.
Claim 28
Dependent Claim
21 words
The method of claim 25, wherein the second coordinating ligand comprises a material from the group consisting of amines and carboxylates.
Claim 29
Dependent Claim
18 words
The method of claim 26, wherein the second coordinating ligand comprises a carboxylate, said carboxylate being a citrate.
Claim 30
Dependent Claim
17 words
The method of claim 25, wherein the second coordinating ligand comprises, an amine, said amine being benzylamine.
Claim 31
Dependent Claim
19 words
The method of claim 15, wherein said chemical solution comprise a slurry in which the abrasive component is provided.
Claim 32
Dependent Claim
23 words
The method of claim 15, wherein the oxidizing agent comprises a material selected from the group consisting of peroxides, persulfates, periodates, and nitrates.
Claim 33
Dependent Claim
12 words
The method of claim 30, wherein the oxidizing agent comprises hydrogen peroxide.
Claim 34
Dependent Claim
20 words
The method of claim 15, wherein the abrasive component comprises a material from the group consisting of silica and alumina.
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