Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
Abstract
Abstract A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H 2 O, a solid abrasive material, and a third component selected from the group consisting of HNO 3 , H 2 SO 4 , and AgNO 3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H 2 O 2 , HOCl, KOCl, KMgO 4 and CH 3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.
Inventors
- 👤 Chris C. Yu
- 👤 Trung T. Doan
Bibliographic Details
Claims Analysis
Total Claims: 9References Cited (Backward Citations)
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