Patent US5225034A successfully refreshed from Google Patents.
US5225034A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
Assignee: Micron Technology Inc
•
Filing: 1992-06-04
•
Granted: 1993-07-06
•
Expires: 2012-06-04
Abstract
Abstract A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H 2 O, a solid abrasive material, and a third component selected from the group consisting of HNO 3 , H 2 SO 4 , and AgNO 3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H 2 O 2 , HOCl, KOCl, KMgO 4 and CH 3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.
Inventors
- 👤 Chris C. Yu
- 👤 Trung T. Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:10
CPC Classifications
H; H10; H10P; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
65 words
A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising AgNO 3 at from about 2% to about 15% by volume, H 2 O, and a solid abrasive material; and chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry.
Claim 2
Dependent Claim
65 words
A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising AgNO 3 at from about 2% to about 15% by volume, H 2 O, and a solid abrasive material; and chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry.
Claim 3
Dependent Claim
24 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry comprises AgNO 3 at from about 2% to about 8% by volume.
Claim 4
Dependent Claim
38 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises a substance selected from the group consisting of H 2 O 2 , HOCl, KOCl, KMgO 4 , CH 3 COOH or mixtures thereof.
Claim 5
Dependent Claim
19 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises H 2 O 2 .
Claim 6
Dependent Claim
15 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises HOCl.
Claim 7
Dependent Claim
15 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises KOCl.
Claim 8
Dependent Claim
17 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises KMgO 4 .
Claim 9
Dependent Claim
17 words
The copper chemical mechanical polishing method of claim 1 wherein the slurry additionally comprises CH 3 COOH.
References Cited (Backward Citations)
US3948703A
Cited
US4305779A
Cited
US4395302A
Cited
US4632727A
Cited
US4944836A
Cited
US4956313A
Cited
DE3829220A1
Cited
US5084071A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-05 | 1997-01-04 | 1997-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-05 | 2001-01-04 | 2001-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-05 | 2005-01-04 | 2005-07-06 | $7700.00 | Window Closed / Lapsed |