US6335129B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for repairing pattern defect, photo mask using the method, and semiconductor device manufacturing method employing the photo mask
Assignee: Toshiba Corp
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Filing: 2000-03-14
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Granted: 2002-01-01
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Expires: 2020-03-14
Abstract
Abstract A new method for repairing pattern defect on a photo mask is provided. The method includes the steps of: (a) determining the irradiation area of the focused ion beam (FIB) directed towards a defect, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect; (b) focusing the FIB onto its irradiation area to remove a part of the pattern film material of the defect from its top surface and thus leave a thin layer on a mask substrate; and (c) removing the thin layer by using a laser beam. The defect may be an isolated pattern or a pattern extended continuously from an edge of the normal pattern. Further, the photo mask repaired by the method, and a manufacturing method of semiconductor devices employing the repaired photo mask are proposed. The photo mask may include a phase shift mask.
Inventors
- 👤 Mitsuyo Asano
- 👤 Shingo Kanamitsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:25
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74; H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3174; H01J2237/31742
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
159 words
A method for repairing a pattern defect comprising: (a) determining the irradiation area for an ion beam directed towards a defect pattern film material formed on a mask substrate, the defect pattern film material being an opaque material different from a transparent material of the mask substrate, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect pattern film material; (b) focusing the ion beam onto its irradiation area to remove a part of the defect pattern film material from its surface so as to leave a thin layer of the defect pattern film material on the mask substrate, configured such that the ion beam does not attack a surface of the mask substrate; and (c) removing only the thin layer by using a laser beam so as not to ablate a normal pattern film material neighboring the defect pattern film material, the normal pattern film material being made of the opaque material.
Claim 2
Independent Claim
159 words
A method for repairing a pattern defect comprising: (a) determining the irradiation area for an ion beam directed towards a defect pattern film material formed on a mask substrate, the defect pattern film material being an opaque material different from a transparent material of the mask substrate, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect pattern film material; (b) focusing the ion beam onto its irradiation area to remove a part of the defect pattern film material from its surface so as to leave a thin layer of the defect pattern film material on the mask substrate, configured such that the ion beam does not attack a surface of the mask substrate; and (c) removing only the thin layer by using a laser beam so as not to ablate a normal pattern film material neighboring the defect pattern film material, the normal pattern film material being made of the opaque material.
Claim 3
Dependent Claim
25 words
The method of claim 1 , wherein the predetermined distance from the edge of the defect pattern film material is 0.3 nm to 200 nm.
Claim 4
Dependent Claim
29 words
The method of claim 1 , wherein the predetermined distance from the edge of the defect pattern film material is half of the diameter of the focused ion beam.
Claim 5
Dependent Claim
49 words
The method of claim 1 , wherein, in the step of focusing the ion beam, a pattern film material formed on the mask substrate at an interface between the defect pattern film material and a normal pattern film material neighboring to the defect pattern film material is completely removed.
Claim 6
Dependent Claim
25 words
The method of claim 1 , wherein the thin layer has an uneven thickness profile, and its maximum thickness is 1 nm to 30 nm.
Claim 7
Dependent Claim
37 words
The method of claim 1 , wherein, in the step of removing the thin layer, the irradiation area of the laser beam is so determined as not to overlap the edge of a normal pattern film material.
Claim 8
Dependent Claim
12 words
The method of claim 1 , wherein the mask substrate is quartz.
Claim 9
Dependent Claim
18 words
The method of claim 7 , wherein a main component of the defect pattern film material is chromium.
Claim 10
Dependent Claim
16 words
The method of claim 8 , wherein the defect pattern film material contains a chromium oxide.
Claim 11
Dependent Claim
42 words
The method of claim 8 , wherein the step of leaving the thin layer is carried out by a gas assisted focused ion beam etching, employing a gas having a etching selectively between the defect pattern film material and the mask substrate.
Claim 12
Dependent Claim
19 words
The method of claim 7 , wherein a main component of the defect pattern film material is molybdenum silicide.
Claim 13
Dependent Claim
21 words
The method of claim 7 , wherein a main component of the defect pattern film material is a molybdenum silicide compound.
Claim 14
Dependent Claim
43 words
The method of claim 7 , wherein the defect pattern film material formed on the mask substrate comprises a first pattern film containing molybdenum suicide and a second pattern film containing chromium, the second pattern film is disposed on the first pattern film.
Claim 15
Dependent Claim
45 words
The method of claim 13 , wherein the step of leaving the thin layer includes etching the second pattern film by a gas assisted focused ion beam etching, employing a gas having a etching selectively between the second pattern film material and the mask substrate.
Claim 16
Dependent Claim
24 words
The method of claim 11 , wherein the focused ion beam contains gallium ions and the thin layer contains a gallium doped molybdenum silicide.
Claim 17
Dependent Claim
21 words
The method of claim 14 , wherein the first pattern film is etched by the gas assisted focused ion beam etching.
Claim 18
Dependent Claim
24 words
The method of claim 16 , wherein the focused ion beam contains gallium ions and the thin layer contains a gallium doped molybdenum silicide.
Claim 19
Dependent Claim
103 words
A photo mask repaired by a method comprising focused ion beam etching so as to leave a thin layer of the defect pattern film material on the mask substrate and removing the thin layer by using a laser beam, the photo mask comprising: (a) a mask substrate having substantially flat surface; and (b) a pattern delineated on the mask substrate, the pattern has an edge, the edge has a localized specific side wall having an inclination angle differing from that of remaining sidewall, the localized specific side wall representing a repaired portion by the focused ion beam etching and the laser beam removing.
Claim 20
Dependent Claim
103 words
A photo mask repaired by a method comprising focused ion beam etching so as to leave a thin layer of the defect pattern film material on the mask substrate and removing the thin layer by using a laser beam, the photo mask comprising: (a) a mask substrate having substantially flat surface; and (b) a pattern delineated on the mask substrate, the pattern has an edge, the edge has a localized specific side wall having an inclination angle differing from that of remaining sidewall, the localized specific side wall representing a repaired portion by the focused ion beam etching and the laser beam removing.
Claim 21
Dependent Claim
34 words
The photo mask of claim 18 , wherein decrease in the image intensity through said mask substrate neighboring to said specific side wall is not higher than 5% compared with that of other portion.
Claim 22
Independent Claim
204 words
A method for manufacturing a semiconductor device comprising: (a) generating patterns with a pattern film material on a mask substrate so as to fabricate a photo mask, the pattern film material is an opaque material different from a transparent material of the mask substrate; (b) inspecting a defect pattern film material made of the pattern film material on the mask substrate; (c) repairing the defect pattern film material comprising: determining the irradiation area for an ion beam directed towards the defect pattern film material, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect pattern film material; focusing the ion beam onto its irradiation area to remove a part of the defect pattern film material from its surface so as to leave a thin layer of the defect pattern film material on the mask substrate, configured such that the ion beam does not attack a surface of the mask substrate; and removing only the thin layer by using a laser beam so as not ablate a normal pattern film material neighboring the defect pattern film material, the normal pattern film material being made of the opaque material; and (d) fabricating a semiconductor device employing said repaired photo mask.
Claim 23
Independent Claim
204 words
A method for manufacturing a semiconductor device comprising: (a) generating patterns with a pattern film material on a mask substrate so as to fabricate a photo mask, the pattern film material is an opaque material different from a transparent material of the mask substrate; (b) inspecting a defect pattern film material made of the pattern film material on the mask substrate; (c) repairing the defect pattern film material comprising: determining the irradiation area for an ion beam directed towards the defect pattern film material, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect pattern film material; focusing the ion beam onto its irradiation area to remove a part of the defect pattern film material from its surface so as to leave a thin layer of the defect pattern film material on the mask substrate, configured such that the ion beam does not attack a surface of the mask substrate; and removing only the thin layer by using a laser beam so as not ablate a normal pattern film material neighboring the defect pattern film material, the normal pattern film material being made of the opaque material; and (d) fabricating a semiconductor device employing said repaired photo mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-12-31 | 2005-07-02 | 2006-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-31 | 2009-07-02 | 2010-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-31 | 2013-07-02 | 2014-01-01 | $7700.00 | Window Closed / Lapsed |