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US5639699A Expired / Lapsed US ⏱️ 0.0 years remaining

Focused ion beam deposition using TMCTS

Assignee: Toshiba Corp
•
Filing: 1995-04-11
•
Granted: 1997-06-17
•
Expires: 2015-04-11
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Abstract

Abstract According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

Inventors

  • 👤 Hiroko Nakamura
  • 👤 Haruki Komano
  • 👤 Kazuyoshi Sugihara
  • 👤 Keiji Horioka
  • 👤 Mitsuyo Kariya
  • 👤 Soichi Inoue
  • 👤 Ichiro Mori
  • 👤 Katsuya Okumura
  • 👤 Tadahiro Takigawa
  • 👤 Toru Watanabe
  • 👤 Motosuke Miyoshi
  • 👤 Yuichiro Yamazaki
  • 👤 Haruo Okano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 22:58
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74; B; B05; B05D; B05D5/00; B05D5/005; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; G03F1/26

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 56 words
A method for forming a silicon oxide film, comprising the steps of: supplying a gas containing a material having an Si--O--Si bond and an Si--H bond to a surface of a structure; and forming a silicon oxide film by FIB assisted deposition wherein a desired portion of the surface of the structure is irradiated with FIB.
Claim 2
Independent Claim 56 words
A method for forming a silicon oxide film, comprising the steps of: supplying a gas containing a material having an Si--O--Si bond and an Si--H bond to a surface of a structure; and forming a silicon oxide film by FIB assisted deposition wherein a desired portion of the surface of the structure is irradiated with FIB.
Claim 3
Dependent Claim 21 words
A method according to claim 1, wherein said material having an Si--O--Si bond and an Si--H bond has a ring structure.
Claim 4
Dependent Claim 20 words
A method according to claim 1, wherein said material having an Si--O--Si bond and an Si--H bond is a 1,3,5,7-tetramethylcyclotetrasiloxane.
Claim 5
Dependent Claim 19 words
A method according to claim 1, wherein a Ga beam or an Si beam is used as said FIB.
Claim 6
Dependent Claim 30 words
A method according to claim 1, wherein said FIB assisted deposition is executed by controlling at least one of an FIB energy, an FIB current density, and a gas pressure.
Claim 7
Independent Claim 64 words
A method for forming a silicon oxide film, comprising the steps of: supplying a gas containing a material having an Si--O--Si bond and an Si--H bond and a gas including an oxygen element-containing material to a surface of a structure; and forming a silicon oxide film by FIB assisted deposition wherein a desired portion of the surface of the structure is irradiated with FIB.
Claim 8
Independent Claim 64 words
A method for forming a silicon oxide film, comprising the steps of: supplying a gas containing a material having an Si--O--Si bond and an Si--H bond and a gas including an oxygen element-containing material to a surface of a structure; and forming a silicon oxide film by FIB assisted deposition wherein a desired portion of the surface of the structure is irradiated with FIB.
Claim 9
Dependent Claim 30 words
A method according to claim 6, wherein said oxygen element-containing material is a material selected from the group consisting of O 2 , O 3 , and N 2 O.
Claim 10
Dependent Claim 21 words
A method according to claim 6, wherein said material having an Si--O--Si bond and an Si--H bond has a ring structure.
Claim 11
Dependent Claim 20 words
A method according to claim 6, wherein said material having an Si--O--Si bond and an Si--H bond is a 1,3,5,7-tetramethylcyclotetrasiloxane.
Claim 12
Dependent Claim 19 words
A method according to claim 6, wherein a Ga beam or an Si beam is used as said FIB.
Claim 13
Dependent Claim 35 words
A method according to claim 6, wherein said FIB assisted deposition is executed by controlling at least one of an FIB energy, an FIB currently density, gas pressures, and a ratio of gas partial pressure.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-06-16 2000-12-16 2001-06-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-06-16 2004-12-16 2005-06-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-06-16 2008-12-16 2009-06-17 $7700.00 Window Closed / Lapsed

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