US5083033A
Expired / Lapsed
US
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Method of depositing an insulating film and a focusing ion beam apparatus
Assignee: Toshiba Corp
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Filing: 1990-03-28
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Granted: 1992-01-21
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Expires: 2010-03-28
Abstract
Abstract Disclosed is a focusing ion beam apparatus, comprising an ion source, focusing and deflecting means for focusing and deflecting an ion beam obtained by the ion source, and a plurality of gas introducing means for a plurality of gases to be supplied onto the surface of a sample to deposit an insulating film. According to the apparatus, a silicon compound gas and a gas mainly consisting of an element other than silicon as a plurality of the gases are supplied onto the surface of the sample, then the ion beam obtained from the ion source is irradiated onto the gases. Thereby, the gases are decomposed so that an insulating film consisting of a silicon oxide or a silicon nitride is deposited on a desired oxide or a silicon nitride is deposited on a desired position of the surface of the sample.
Inventors
- 👤 Haruki Komano
- 👤 Toshihiko Hamasaki
- 👤 Tadahiro Takigawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/44; C23C16/48; C23C16/486; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3178; H10P14/66; H10P14/668; H10P14/6681; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/31732; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6684; H10P14/6686; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
123 words
A method of depositing an insulating film on the surface of a sample, comprising: a step of supplying a first gas consisting of a silicon compound selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetramethylsilane, and dimethoxydimethylsilane, hexamethyldisiloxane, and mixtures thereof onto the surface of the sample placed in a vacuum environment; a step of supplying a second gas predominatly comprising an element other than silicon onto the surface of the sample; and a step of depositing a silicon compound insulating film on the surface of the sample by reaction of the first gas and the second gas generated from irradiating an ion beam obtained from an ion source including an element for composing the insulating film onto the surface of the sample.
Claim 2
Independent Claim
123 words
A method of depositing an insulating film on the surface of a sample, comprising: a step of supplying a first gas consisting of a silicon compound selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetramethylsilane, and dimethoxydimethylsilane, hexamethyldisiloxane, and mixtures thereof onto the surface of the sample placed in a vacuum environment; a step of supplying a second gas predominatly comprising an element other than silicon onto the surface of the sample; and a step of depositing a silicon compound insulating film on the surface of the sample by reaction of the first gas and the second gas generated from irradiating an ion beam obtained from an ion source including an element for composing the insulating film onto the surface of the sample.
Claim 3
Dependent Claim
63 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of supplying a radical of a silicon compound gas as the first gas; and the step of supplying the second gas is a step of supplying a radical of a gas of an element other than silicon as the second gas.
Claim 4
Dependent Claim
35 words
A method of depositing an insulating film according to claim 1, wherein the step of depositing the silicon compound insulating film is a step of using a liquid metal ion source as the ion source.
Claim 5
Dependent Claim
37 words
A method of depositing an insulating film according to claim 1, wherein the step of depositing the silicon compound insulating film is a step of using an active-gas electric field ionization ion source as the ion source.
Claim 6
Dependent Claim
37 words
A method of depositing an insulating film according to claim 1, wherein the step of depositing the silicon compound insulating film is a step of using an inert-gas electric field ionization ion source as the ion source.
Claim 7
Dependent Claim
29 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using tetramethoxysilane as the first gas.
Claim 8
Dependent Claim
29 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using tetraethoxysilane as the first gas.
Claim 9
Dependent Claim
29 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using tetramethylsilane as the first gas.
Claim 10
Dependent Claim
29 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using dimethoxydimethylsilane as the first gas.
Claim 11
Dependent Claim
29 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using hexamethyldisiloxane as the first gas.
Claim 12
Dependent Claim
43 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the first gas is a step of using a mixed gas of silicon compound gases selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetramethylsilane, dimethoxydimethylsilane and hexamethyldisiloxane,
Claim 13
Dependent Claim
58 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the second gas is a step of using a gas mainly consisting of oxygen as the second gas; and the step of depositing a silicon compound insulating film is a step of depositing a silicon oxide as the silicon compound insulating film.
Claim 14
Dependent Claim
34 words
A method of depositing an insulating film according to claim 12, wherein the step of supplying the second gas is a step of using an oxygen gas as the gas mainly consisting of oxygen.
Claim 15
Dependent Claim
34 words
A method of depositing an insulating film according to claim 12, wherein the step of supplying the second gas is a step of using an ozone gas as the gas mainly consisting of oxygen.
Claim 16
Dependent Claim
43 words
A method of depositing an insulating film according to claim 12, wherein the step of supplying the second gas is a step of using a mixed gas consisting of an oxygen gas and an ozone gas as the gas mainly consisting of oxygen.
Claim 17
Dependent Claim
58 words
A method of depositing an insulating film according to claim 1, wherein the step of supplying the second gas is a step of using a gas mainly consisting of nitrogen as the second gas; and the step of depositing an silicon compound insulating film is a step of depositing a silicon nitride as the silicon compound insulating film.
Claim 18
Dependent Claim
34 words
A method of depositing an insulating film according to claim 16, wherein the step of supplying the second gas is a step of using a nitrogen gas as the gas mainly consisting of nitrogen.
Claim 19
Dependent Claim
34 words
A method of depositing an insulating film according to claim 16, wherein the step of supplying the second gas is a step of using an ammonia gas as the gas mainly consisting of nitrogen.
Claim 20
Dependent Claim
35 words
A method of depositing an insulating film according to claim 16, wherein the step of supplying the second gas is a step of using a nitrogen oxide gas as the gas mainly consisting of nitrogen.
Claim 21
Dependent Claim
53 words
A method of depositing an insulating film according to claim 16, wherein the step of supplying the second gas is a step of using a mixed gas of gases selected from the group consisting of a nitrogen gas, an ammonia gas and a nitrogen oxide gas as the gas mainly consisting of nitrogen.
Claim 22
Independent Claim
130 words
A method of depositing an insulating film on the surface of a sample, comprising: a step of activating a first gas selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetramethylsilane, and dimethoxydimethylsilane, hexamethyldisiloxane, and mixtures thereof into a radical; a step of supplying said radical to a sample room kept at a vacuum environment and containing a sample; a step of supplying a second gas mainly consisting of an element other than silicon onto the surface of the sample; and a step of depositing a silicon compound insulating film on the surface of the sample by reaction of the first gas and the second gas generated from irradiating an ion beam obtained from an ion source including an element for composing the insulating film onto the surface of the sample.
Claim 23
Independent Claim
130 words
A method of depositing an insulating film on the surface of a sample, comprising: a step of activating a first gas selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetramethylsilane, and dimethoxydimethylsilane, hexamethyldisiloxane, and mixtures thereof into a radical; a step of supplying said radical to a sample room kept at a vacuum environment and containing a sample; a step of supplying a second gas mainly consisting of an element other than silicon onto the surface of the sample; and a step of depositing a silicon compound insulating film on the surface of the sample by reaction of the first gas and the second gas generated from irradiating an ion beam obtained from an ion source including an element for composing the insulating film onto the surface of the sample.
Claim 24
Dependent Claim
40 words
A method according to claim 21, wherein the second gas is also activated into a radical outside the sample room, and then provided onto the sample in the sample room for the step of depositing the silicon compound insulating film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |