US4936968A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion-beam machining method and apparatus
Assignee: Hitachi Ltd
•
Filing: 1989-03-17
•
Granted: 1990-06-26
•
Expires: 2009-03-17
Abstract
Abstract In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h≧d to h<<d in accordance with an increase in the depth of a hole which is being formed, to thereby control the number of sputtered particles redeposited on side walls of the hole. The apparatus includes a deflection controller for controlling an ion beam deflector and blanking electrode so as to change the above-mentioned relationship between d and h.
Inventors
- 👤 Tsuyoshi Ohnishi
- 👤 Tohru Ishitani
- 👤 Yoshimi Kawanami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:07
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
126 words
An ion-beam machining method of effecting a sputtering of a material by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of said material, wherein the relationship between a beam diameter d of the focused ion beam on the surface of said material and a height h of a stepped portion of said material formed by each scan of the focused ion beam is changed from h≧d to h<<d in accordance with an increase in the depth of a hole being formed by the sputtering, whereby the amount of particles generated from the portion of said material which is irradiated by said focused ion beam and sputtered and redeposited on a side wall of the hole can be controlled.
Claim 2
Dependent Claim
126 words
An ion-beam machining method of effecting a sputtering of a material by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of said material, wherein the relationship between a beam diameter d of the focused ion beam on the surface of said material and a height h of a stepped portion of said material formed by each scan of the focused ion beam is changed from h≧d to h<<d in accordance with an increase in the depth of a hole being formed by the sputtering, whereby the amount of particles generated from the portion of said material which is irradiated by said focused ion beam and sputtered and redeposited on a side wall of the hole can be controlled.
Claim 3
Dependent Claim
45 words
A method according to claim 1 wherein said relationship between d and h is changed by changing at least one of a beam's stationary time on said material surface, a current density and the beam diameter of said focused ion beam on said material surface.
Claim 4
Dependent Claim
30 words
A method according to claim 1 wherein the depth of said hole is estimated on the basis of the irradiation time of said focused ion beam on said material surface.
Claim 5
Dependent Claim
39 words
A method according to claim 1, wherein the depth of said hole is estimated on the basis of the integrated value of one of the beam current of said focused ion beam and a current flowing in said material.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein the pitch of deflection of said focused ion beam is selected to be smaller than the beam diameter of said focused ion beam at least under the condition of h<<d.
Claim 7
Dependent Claim
35 words
A method according to claim 1, wherein the relationship between the magnitudes of d and h is controlled on the basis of the position of said hole which is irradiated by said focused ion beam.
Claim 8
Dependent Claim
68 words
A method according to claim 1, wherein the scanning of said focused ion beam is controlled such that the trajectory thereof which is scanning said material approximately perpendicularly intersects a line normal to the side wall of said hole which is closest to the irradiation point of said focused ion beam and such that the intersection point of said trajectory and said normal sequentially approaches said side wall.
Claim 9
Dependent Claim
16 words
A method according to claim 1, wherein said material is a device of multi-layered wiring structure.
Claim 10
Dependent Claim
98 words
An ion-beam machining method of effecting sputtering by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of a material, wherein the relationship between d and h is changed from h≧d to h<<d either continuously or in stepwise manner in accordance with an increase in the aspect ratio of a hole which is being formed, where d represents the beam diameter of said focused ion beam on the surface of said material and h represents the depth of said hole which is formed by each scan of said focused ion beam.
Claim 11
Dependent Claim
98 words
An ion-beam machining method of effecting sputtering by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of a material, wherein the relationship between d and h is changed from h≧d to h<<d either continuously or in stepwise manner in accordance with an increase in the aspect ratio of a hole which is being formed, where d represents the beam diameter of said focused ion beam on the surface of said material and h represents the depth of said hole which is formed by each scan of said focused ion beam.
Claim 12
Dependent Claim
99 words
An ion-beam machining method of effecting sputtering by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of a material, wherein the stationary time of said focused ion beam at a deflection point on said material is shortened in accordance with an increase in the depth of a hole which is being formed to change an angle θ from 0°<θ to 20°≃θ, said angle θ being made between a line normal to said material and the direction parallel to the axis of the intensity center of particles sputtered from said material surface.
Claim 13
Dependent Claim
99 words
An ion-beam machining method of effecting sputtering by deflecting a focused ion beam and scanning the focused ion beam thus deflected on a surface of a material, wherein the stationary time of said focused ion beam at a deflection point on said material is shortened in accordance with an increase in the depth of a hole which is being formed to change an angle θ from 0°<θ to 20°≃θ, said angle θ being made between a line normal to said material and the direction parallel to the axis of the intensity center of particles sputtered from said material surface.
Claim 14
Dependent Claim
91 words
An ion-beam machining method of forming a hole in a material by scanning a focused beam of charged particles on a surface of said material and effecting sputtering of said material, wherein said focused beam is scanned such that the trajectory thereof which is scanning the surface of said material approximately perpendicularly intersects a line normal to the side wall of said hole which is closest to the irradiation point of said focused beam and such that the intersection point of said trajectory and said normal sequentially approaches said side wall.
Claim 15
Dependent Claim
91 words
An ion-beam machining method of forming a hole in a material by scanning a focused beam of charged particles on a surface of said material and effecting sputtering of said material, wherein said focused beam is scanned such that the trajectory thereof which is scanning the surface of said material approximately perpendicularly intersects a line normal to the side wall of said hole which is closest to the irradiation point of said focused beam and such that the intersection point of said trajectory and said normal sequentially approaches said side wall.
Claim 16
Dependent Claim
103 words
In a focused ion beam apparatus which comprises an ion source, a lens system for focusing an ion beam supplied from said ion source, a deflector for deflecting said ion beam, and a blanking electrode for blanking said ion beam and which is arranged to form a hole in a material by scanning said ion beam on said material, the improvement comprising a deflection controlling means for controlling said deflector and said blanking electrode so as to change the relationship between d and h from h≧d to h<<d in accordance with an increase in the depth of said hole which is being formed.
Claim 17
Dependent Claim
103 words
In a focused ion beam apparatus which comprises an ion source, a lens system for focusing an ion beam supplied from said ion source, a deflector for deflecting said ion beam, and a blanking electrode for blanking said ion beam and which is arranged to form a hole in a material by scanning said ion beam on said material, the improvement comprising a deflection controlling means for controlling said deflector and said blanking electrode so as to change the relationship between d and h from h≧d to h<<d in accordance with an increase in the depth of said hole which is being formed.
Claim 18
Dependent Claim
30 words
A focused ion beam apparatus according to claim 12, wherein said deflection controlling means controls the stationary time of said focused ion beam at each deflection point on said material.
Claim 19
Dependent Claim
36 words
A focused ion beam apparatus according to claim 13, wherein said deflection controlling means has the function of setting the pitch of deflection of said focused ion beam to a value smaller than the beam diameter.
Claim 20
Dependent Claim
28 words
A focused ion beam apparatus according to claim 13, wherein said deflection controlling means has a function of varying the pitch of deflection of said focused ion beam.
Claim 21
Dependent Claim
29 words
A focused ion beam apparatus according to claim 13, wherein said deflection controlling means has a function of effecting selection of the scan directions of said focused ion beam.
Claim 22
Dependent Claim
49 words
A focused ion beam apparatus according to claim 13, wherein the stationary time of said focused ion beam is controlled in correspondence with the irradiation position of said focused ion beam on said material, the scan direction of said focused ion beam and an aspect ratio of said hole.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |