US6156461A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for repair of photomasks
Assignee: GlobalFoundries Inc
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Filing: 2000-02-14
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Granted: 2000-12-05
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Expires: 2020-02-14
Abstract
Abstract A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain. In another embodiment, opaque defects are repaired with a short pulse duration laser without damage to underlying quartz or adjacent clear regions while avoiding the need for a coating.
Inventors
- 👤 Brian J. Grenon
- 👤 Richard A. Haight
- 👤 Dennis M. Hayden
- 👤 Michael S. Hibbs
- 👤 J. Peter Levin
- 👤 Timothy E. Neary
- 👤 Raymond E. Rochefort
- 👤 Dennis A. Schmidt
- 👤 Jacek G. Smolinski
- 👤 Alfred Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:39
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74; B; B23; B23K; B23K26/00; B23K26/02; B23K26/06; B23K26/062; B23K26/0622; B23K26/0624
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
137 words
A method of fabricating integrated circuits on a semiconductor wafer, comprising the steps of: (a) providing a semiconductor wafer; (b) providing a repaired mask, wherein the method of repairing said mask comprises the steps of: 1. providing a transparent substrate comprising a surface having a first region and a second region, a light absorbing first material covering said first region and not covering said second region; 2. inspecting said mask and detecting an opaque defect on said mask, said defect in a defect region; and 3. shining a plurality of laser pulses on said opaque defect region to ablate said defect, said laser pulses having a pulse duration of less than 1 picoseconds, to remove said defect without substantially damaging said substrate underlying said defect; and (c) shining light through said repaired mask and exposing said wafer.
Claim 2
Independent Claim
137 words
A method of fabricating integrated circuits on a semiconductor wafer, comprising the steps of: (a) providing a semiconductor wafer; (b) providing a repaired mask, wherein the method of repairing said mask comprises the steps of: 1. providing a transparent substrate comprising a surface having a first region and a second region, a light absorbing first material covering said first region and not covering said second region; 2. inspecting said mask and detecting an opaque defect on said mask, said defect in a defect region; and 3. shining a plurality of laser pulses on said opaque defect region to ablate said defect, said laser pulses having a pulse duration of less than 1 picoseconds, to remove said defect without substantially damaging said substrate underlying said defect; and (c) shining light through said repaired mask and exposing said wafer.
Claim 3
Dependent Claim
59 words
A method as recited in claim 1, further comprising before said shining step (b3.) the step of providing a second material on said substrate on said second region, said second material for temporary protection of said second region from fallout during said shining step (b3.), said second material selectively removable with respect to said first material and said substrate.
Claim 4
Dependent Claim
19 words
A method as recited in claim 1, wherein said laser pulses have a duration of less than 1 picosecond.
Claim 5
Dependent Claim
19 words
A method as recited in claim 1, wherein said laser pulses have a duration of less than 200 femtoseconds.
Claim 6
Dependent Claim
17 words
A method as recited in claim 1, wherein said laser pulses ablate said defect layer by layer.
Claim 7
Dependent Claim
20 words
A method as recited in claim 1, wherein no coating is provided on said substrate before said shining step (b3.).
Claim 8
Dependent Claim
24 words
A method as recited in claim 1, wherein in said shining step (b3.), said defect is removed without splattering defect material on said substrate.
Claim 9
Dependent Claim
24 words
A method as recited in claim 1, wherein in said shining step (b3.), said defect is removed without pitting said substrate under said defect.
Claim 10
Dependent Claim
15 words
A method as recited in claim 1, wherein said opaque defect comprises chrome or molybdenum.
Claim 11
Dependent Claim
41 words
A method as recited in claim 1, wherein said substrate is transparent and has a transmittance in regions not laser treated, said substrate having a transmittance under said removed material that is within 5% of said transmittance in said untreated regions.
Claim 12
Dependent Claim
24 words
A method as recited in claim 10, wherein said transmittance under said removed material is within 2% of said transmittance in said untreated regions.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |