Patent US6329915B1 successfully refreshed from Google Patents.
US6329915B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
RF Tag having high dielectric constant material
Assignee: Intermec IP Corp
•
Filing: 1999-04-24
•
Granted: 2001-12-11
•
Expires: 2019-04-24
Abstract
Abstract A radio frequency (RF) transponder (RF tag) is proposed, where a high dielectric constant material is used in operative cooperation with a tag antenna so that the distance of the tag antenna from conducting or absorbing surfaces may be reduced, and so the tag dimensions may be reduced.
Inventors
- 👤 Michael J. Brady
- 👤 Paul A. Moskowitz
- 👤 Dah-Weih Duan
- 👤 Ali Afzali-Ardakani
- 👤 Christopher A. Field
- 👤 Peter R. Duncombe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:18
CPC Classifications
H; H01; H01Q; H01Q1/00; H01Q1/12; H01Q1/22; H01Q1/2208; H01Q1/2225; G; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G06K19/0723; G06K19/077; G06K19/07749; G06K7/00; G06K7/0008; G08; G08B; G08B13/00; G08B13/22; G08B13/24; G08B13/2402; G08B13/2405; G08B13/2414; G08B13/2417; G08B13/2428; G08B13/2431; G08B13/2437; G08B13/2442; G08B13/2451; G08B13/2462; H01Q13/00; H01Q13/02; H01Q15/00; H01Q15/14; H01Q15/16; H01Q19/00; H01Q19/10; H01Q19/106; H01Q19/12; H01Q19/13; H01Q19/132; H01Q21/00; H01Q21/06; H01Q21/061; H01Q21/065; H01Q9/00; H01Q9/04; H01Q9/0407; H01Q9/0414; H01Q9/0428
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
75 words
A radio frequency transponder (RF tag), comprising: an antenna for communicating RF signals between the RF tag and a base station, the RF signals having a wavelength in free space; an apparatus connected to the antenna, the apparatus for modulating the backscattering from the antenna; and a high dielectric constant material operatively cooperating with the antenna to reduce the RF tag dimensions for optimally communicating RF signals between the RF tag and the base station.
Claim 2
Dependent Claim
75 words
A radio frequency transponder (RF tag), comprising: an antenna for communicating RF signals between the RF tag and a base station, the RF signals having a wavelength in free space; an apparatus connected to the antenna, the apparatus for modulating the backscattering from the antenna; and a high dielectric constant material operatively cooperating with the antenna to reduce the RF tag dimensions for optimally communicating RF signals between the RF tag and the base station.
Claim 3
Dependent Claim
115 words
A radio frequency transponder (RF tag), comprising: an antenna for communicating RF signals between the RF tag and a base station, the RF signals having a wavelength in free space; at least one semiconductor device connected to the antenna, the semiconductor device having a rectification power stage for rectifying signals from the antenna and powering the semiconductor device, a non-volatile memory, and logic circuits for receiving and sending signals from and to the antenna and for reading and writing from and to the non-volatile memory; and a high dielectric constant material operatively cooperating with the antenna to reduce the RF tag dimensions for optimally communicating RF signals between the RF tag and the base station.
Claim 4
Dependent Claim
115 words
A radio frequency transponder (RF tag), comprising: an antenna for communicating RF signals between the RF tag and a base station, the RF signals having a wavelength in free space; at least one semiconductor device connected to the antenna, the semiconductor device having a rectification power stage for rectifying signals from the antenna and powering the semiconductor device, a non-volatile memory, and logic circuits for receiving and sending signals from and to the antenna and for reading and writing from and to the non-volatile memory; and a high dielectric constant material operatively cooperating with the antenna to reduce the RF tag dimensions for optimally communicating RF signals between the RF tag and the base station.
Claim 5
Dependent Claim
30 words
The RF tag of claim 2 , wherein the high dielectric constant material has a thickness of less than one-quarter of the wavelength of the RF signal in free space.
Claim 6
Dependent Claim
30 words
The RF tag of claim 3 , wherein the high dielectric constant material has a thickness of less than one-eighth of the wavelength of the RF signal in free space.
Claim 7
Dependent Claim
42 words
The RF tag of claim 2 , wherein the high dielectric constant material has a thickness of less than one-quarter of the wavelength of the RF signal in free space and is interposed between the antenna and an external electrically conducting surface.
Claim 8
Dependent Claim
53 words
The RF tag of claim 2 , further comprising an electrically conducting material, wherein the high dielectric constant material has a thickness of less than one-quarter of the wavelength of the RF signal in free space and wherein the high dielectric constant material is interposed between the antenna and the electrically conducting material.
Claim 9
Dependent Claim
24 words
The RF tag of claim 2 , wherein the maximum dimension of the antenna is less than the maximum dimension of the semiconductor device.
Claim 10
Dependent Claim
33 words
The RF tag of claim 7 , wherein the antenna is connected to the semiconductor device before the semiconductor device is separated from a wafer used in the production of the semiconductor device.
Claim 11
Dependent Claim
36 words
The RF tag of claim 7 , wherein the high dielectric constant material is applied to the semiconductor device before the semiconductor device is separated from a wafer used in the production of the semiconductor device.
Claim 12
Dependent Claim
19 words
The RF tag of claim 2 , wherein the high dielectric constant material has dielectric constant greater than 20.
Claim 13
Dependent Claim
19 words
The RF tag of claim 10 , wherein the high dielectric constant material has dielectric constant greater than 50.
Claim 14
Dependent Claim
19 words
The RF tag of claim 11 , wherein the high dielectric constant material has dielectric constant greater than 100.
Claim 15
Dependent Claim
110 words
A semiconductor wafer, comprising: at first large plurality of discrete semiconductor devices, each discrete semiconductor device having a rectification power stage for rectifying signals from an antenna and powering the semiconductor device, a non-volatile memory, and logic circuits for receiving and sending signals from and to the antenna and for reading and writing from and to the non-volatile memory; a second large plurality of antennas, each of the antennas connected to one of the discrete semiconductor devices, and a high dielectric constant material operatively cooperating with the antennas and semiconductor devices to form RF tags having dimensions for optimally communicating RF signals between the RF tag and a base station.
Claim 16
Dependent Claim
110 words
A semiconductor wafer, comprising: at first large plurality of discrete semiconductor devices, each discrete semiconductor device having a rectification power stage for rectifying signals from an antenna and powering the semiconductor device, a non-volatile memory, and logic circuits for receiving and sending signals from and to the antenna and for reading and writing from and to the non-volatile memory; a second large plurality of antennas, each of the antennas connected to one of the discrete semiconductor devices, and a high dielectric constant material operatively cooperating with the antennas and semiconductor devices to form RF tags having dimensions for optimally communicating RF signals between the RF tag and a base station.
Claim 17
Dependent Claim
63 words
The semiconductor wafer of claim 13 , wherein a high dielectric constant material is applied as a first layer to the semiconductor after the semiconductor devices have been fabricated, and wherein the antenna structures are fabricated on the first layer and connected to the semiconductor devices, and wherein a second layer of a high dielectric constant material is applied over the antenna structures.
Claim 18
Dependent Claim
32 words
The semiconductor wafer of claim 14 , wherein the second layer has a thickness greater than one quarter the wavelength of the RF signals in the dielectric material of the second layer.
Claim 19
Dependent Claim
32 words
The semiconductor wafer of claim 15 , wherein the second layer has a thickness greater than one half the wavelength of the RF signals in the dielectric material of the second layer.
Claim 20
Dependent Claim
20 words
The semiconductor wafer of claim 13 , wherein the high dielectric constant material has a dielectric constant greater than 20.
Claim 21
Dependent Claim
20 words
The semiconductor wafer of claim 17 , wherein the high dielectric constant material has a dielectric constant greater than 50.
Claim 22
Dependent Claim
20 words
The semiconductor wafer of claim 18 , wherein the high dielectric constant material has a dielectric constant greater than 100.
References Cited (Backward Citations)
US3737904A
Cited
US4075632A
Cited
US4739328A
Cited
US4816839A
Cited
US5030807A
Cited
US5119104A
Cited
US5305008A
Cited
US5776278A
Cited
US5787174A
Cited
US5430441A
Cited
US5479172A
Cited
US5909624A
Cited
US5528222A
Cited
US5972156A
Cited
US5608417A
Cited
US5606323A
Cited
US5786626A
Cited
US5850187A
Cited
US5995048A
Cited
US5945938A
Cited
US5963177A
Cited
US6043745A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |