Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates

Claim 1

A stress-engineered substrate, comprising: a first stress control layer having a first lattice constant and a first thermal expansion coefficient; a second stress control layer having a thermal expansion coefficient different from the first thermal expansion coefficient; a joining layer disposed between the first stress control layer and the second stress control layer, the joining layer having a softening temperature selected so as to decouple the first stress control layer from the second stress control layer above the softening temperature; and an epitaxial layer having a second lattice constant and a second thermal expansion coefficient and being disposed on the first stress control layer, wherein the thermal expansion coefficient of the second stress control layer is selected so that if the second lattice constant is greater than the first lattice constant and the second thermal expansion coefficient is greater than the first thermal expansion coefficient, then a composite thermal expansion coefficient of the stress-engineered substrate is greater than or equal to the thermal expansion coefficient of the epitaxial layer below the softening temperature, and if the second lattice constant is less than the first lattice constant and the second thermal expansion coefficient is less than the first thermal expansion coefficient, then a composite thermal expansion coefficient of the stress-engineered substrate is less than or equal to the thermal expansion coefficient of the epitaxial layer below the softening temperature.