Patent US6328796B1 successfully refreshed from Google Patents.
US6328796B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single-crystal material on non-single-crystalline substrate
Assignee: United States Department of the Navy
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Filing: 1999-02-01
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Granted: 2001-12-11
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Expires: 2019-02-01
Abstract
Abstract A method for making a multilayered structure with a single crystal film bonded to a polycrystalline substrate has the steps of: bonding a single crystal film to a polycrystalline substrate; and growing an epitaxial layer on said single crystal film bonded to said polycrystalline substrate.
Inventors
- 👤 Francis J. Kub
- 👤 Karl D. Hobart
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:22
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B25/00; C30B25/02; C30B25/18; C30B29/36; C30B29/403; C30B29/406; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
92 words
A method for making a multilayered device with an epitaxial layer grown on a single-crystal film bonded to a non-single crystalline substrate, comprising the steps of: a. wafer bonding a single-crystal film, consisting of one or more single-crystal layers, to a non-single crystalline substrate, wherein said substrate has a thermal coefficient of expansion; and b. growing a first epitaxial layer on said single-crystal film, wherein said first epitaxial layer has a thermal coefficient of expansion, and wherein said thermal coefficient of expansion for said substrate and said epitaxial layer are closely matched.
Claim 2
Independent Claim
92 words
A method for making a multilayered device with an epitaxial layer grown on a single-crystal film bonded to a non-single crystalline substrate, comprising the steps of: a. wafer bonding a single-crystal film, consisting of one or more single-crystal layers, to a non-single crystalline substrate, wherein said substrate has a thermal coefficient of expansion; and b. growing a first epitaxial layer on said single-crystal film, wherein said first epitaxial layer has a thermal coefficient of expansion, and wherein said thermal coefficient of expansion for said substrate and said epitaxial layer are closely matched.
Claim 3
Dependent Claim
14 words
The method of claim 1 , wherein said polycrystalline substrate is a ceramic substrate.
Claim 4
Dependent Claim
17 words
The method of claim 1 , wherein said single crystal film is a compliant single crystal film.
Claim 5
Dependent Claim
14 words
The method of claim 1 , wherein said single crystal film is a semiconductor.
Claim 6
Dependent Claim
28 words
The method of claim 1 , wherein said single crystal film is selected from the group consisting of MgO, Si, SiC, InP, GaSb, GaAs, and CaF 2 .
Claim 7
Dependent Claim
12 words
The method of claim 1 , wherein said substrate is electrically insulating.
Claim 8
Dependent Claim
12 words
The method of claim 1 , wherein said substrate is electrically conducting.
Claim 9
Dependent Claim
14 words
The method of claim 1 , wherein said substrate has a high thermal conductivity.
Claim 10
Dependent Claim
12 words
The method of claim 1 , wherein said substrate is optically transparent.
Claim 11
Dependent Claim
21 words
The method of claim 1 , wherein said substrate is selected from the group consisting of SiC, graphite, diamond, and AlN.
Claim 12
Dependent Claim
24 words
The method of claim 1 , wherein said epitaxial layer is selected from the group consisting of SiC, AlN, GaN, InGaN, diamond, and AlGaN.
Claim 13
Dependent Claim
29 words
The method of claim 1 , further comprising: growing at least one additional epitaxial layer on said epitaxial layer on said single crystal film bonded to said polycrystalline substrate.
Claim 14
Independent Claim
99 words
A method for making a multilayered device, comprising the steps of: a. growing a single-crystal etch stop layer, consisting of one or more single-crystal layers, on an etchable first substrate; b. wafer bonding said single-crystal etch stop layer to a second non-single crystalline substrate having a thermal coefficient of expansion; c. etching said etchable first substrate to expose said single-crystal etch stop layer; and d. growing an epitaxial layer having a thermal coefficient of expansion on said single-crystal etch stop layer and wherein said second non-single crystalline substrate and said epitaxial layer have closely matched coefficients of thermal expansion.
Claim 15
Independent Claim
99 words
A method for making a multilayered device, comprising the steps of: a. growing a single-crystal etch stop layer, consisting of one or more single-crystal layers, on an etchable first substrate; b. wafer bonding said single-crystal etch stop layer to a second non-single crystalline substrate having a thermal coefficient of expansion; c. etching said etchable first substrate to expose said single-crystal etch stop layer; and d. growing an epitaxial layer having a thermal coefficient of expansion on said single-crystal etch stop layer and wherein said second non-single crystalline substrate and said epitaxial layer have closely matched coefficients of thermal expansion.
Claim 16
Dependent Claim
24 words
The method of claim 13 , wherein said epitaxial layer is selected from the group consisting of SiC, AlN, GaN, InGaN, diamond, and AlGaN.
Claim 17
Dependent Claim
76 words
The method of claim 12 , further comprising: prior to said step of bonding said single crystal etch stop layer to a polycrystalline second substrate, implanting hydrogen into said first substrate to a selected depth below said single crystal etch stop layer; and after said step of bonding said single crystal etch stop layer to a polycrystalline second substrate, heating said first substrate, to split said first substrate at the preselected depth of said implanted hydrogen.
Claim 18
Dependent Claim
25 words
The method of claim 12 , wherein said single crystal etch stop layer is selected from the group consisting of Si, GaAs, CaF 2 .
Claim 19
Dependent Claim
15 words
The method of claim 12 , wherein said etchable first substrate is a ceramic substrate.
Claim 20
Dependent Claim
21 words
The method of claim 12 , wherein said etchable first substrate is selected from the group consisting of SiC and GaN.
Claim 21
Dependent Claim
17 words
The method of claim 12 , wherein said single crystal film is a compliant single crystal film.
Claim 22
Dependent Claim
12 words
The method of claim 12 , wherein said substrate is electrically insulating.
Claim 23
Dependent Claim
12 words
The method of claim 12 , wherein said substrate is electrically conducting.
Claim 24
Dependent Claim
14 words
The method of claim 12 , wherein said substrate has a high thermal conductivity.
Claim 25
Independent Claim
50 words
A method of making a multilayered device, comprising the steps of: a. wafer bonding a single-crystal film to a non-single crystalline substrate, wherein said non-single crystalline substrate has a thermal conductivity greater than 1.5 W/mK at room temperature; and b. fabricating said device at a temperature greater than 300° C.
Claim 26
Independent Claim
50 words
A method of making a multilayered device, comprising the steps of: a. wafer bonding a single-crystal film to a non-single crystalline substrate, wherein said non-single crystalline substrate has a thermal conductivity greater than 1.5 W/mK at room temperature; and b. fabricating said device at a temperature greater than 300° C.
Claim 27
Dependent Claim
18 words
The method of claim 22 , wherein said thermal conductivity is greater than 10 W/mK at room temperature.
Claim 28
Dependent Claim
13 words
The method of claim 22 , wherein said substrate is an amorphous substrate.
Claim 29
Dependent Claim
18 words
The method of claim 22 , wherein said substrate has a strain point temperature greater than 1140° C.
Claim 30
Dependent Claim
13 words
The method of claim 2 , wherein said polycrystalline substrate is silicon carbide.
Claim 31
Dependent Claim
13 words
The method of claim 2 , wherein said ceramic substrate is aluminum nitride.
Claim 32
Dependent Claim
26 words
The method of claim 1 , further including a bond interface between said substrate and said single-crystal film and wherein said bond interface is electrically conducting.
Claim 33
Dependent Claim
13 words
The method of claim 11 , wherein said first epitaxial layer is GaN.
Claim 34
Dependent Claim
6 words
The product of claim 1 .
Claim 35
Dependent Claim
24 words
The method of claim 1 , wherein said substrate is polysilicon carbide, said single-crystal film is silicon (111) and said epitaxial layer is GaN.
Claim 36
Dependent Claim
20 words
The method of claim 1 , further including an AlN buffer layer between said single-crystal film and said epitaxial layer.
Claim 37
Dependent Claim
23 words
The method of claim 33 , wherein said AlN buffer layer is between said single-crystal silicon (111) film and said epitaxial GAN layer.
Claim 38
Dependent Claim
23 words
The method of claim 1 , wherein said substrate is poly-AlN, said single-crystal film is silicon (111) and said epitaxial layer is GaN.
Claim 39
Dependent Claim
6 words
The product of claim 13 .
Claim 40
Dependent Claim
6 words
The product of claim 23 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |