US6328043B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Filtering technique for CVD chamber process gases
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-05-20
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Granted: 2001-12-11
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Expires: 2019-05-20
Abstract
Abstract A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH 4 as silicon source gas and NF 3 as cleaning gas, includes purging a carrier gas line for an SiH 4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF 3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH 4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.
Inventors
- 👤 Young-Roe Kim
- 👤 Hyun-Young Kim
- 👤 Hyun-Kuk Ko
- 👤 Kyung-Burn Koo
- 👤 Ju-Wan Kim
- 👤 Hyong-Soo Kim
- 👤 Dong-chan Park
- 👤 Dong-Geun Na
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4408; C23C16/22; C23C16/30; C23C16/42; C23C16/4405; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
97 words
A method for removing particulate contaminants in a silicide deposition process, comprising: purging a first carrier gas line to remove contaminants from a chamber and the first carrier gas line by supplying a carrier gas to the chamber via a second carrier gas line; supplying a cleaning gas into the chamber; forming a plasma in the chamber from the cleaning gas; and purging a reaction gas line for flowing a reaction gas to remove any contaminants in the chamber and the reaction gas line, whereby particulate contamination by the cleaning gas is prevented in the deposition process.
Claim 2
Independent Claim
97 words
A method for removing particulate contaminants in a silicide deposition process, comprising: purging a first carrier gas line to remove contaminants from a chamber and the first carrier gas line by supplying a carrier gas to the chamber via a second carrier gas line; supplying a cleaning gas into the chamber; forming a plasma in the chamber from the cleaning gas; and purging a reaction gas line for flowing a reaction gas to remove any contaminants in the chamber and the reaction gas line, whereby particulate contamination by the cleaning gas is prevented in the deposition process.
Claim 3
Dependent Claim
36 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , further comprising flowing a silicon source gas into the chamber, wherein the silicon source gas is SiH 4 .
Claim 4
Dependent Claim
25 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , wherein the cleaning gas is NF 3 .
Claim 5
Dependent Claim
25 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , wherein the reaction gas is WF 6 .
Claim 6
Dependent Claim
23 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , wherein the carrier gas is argon.
Claim 7
Dependent Claim
33 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , fuither comprising purging an inner part of the chamber after purging the first carrier gas line.
Claim 8
Dependent Claim
47 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , further comprising purging an inner part of the chamber before and after supplying the cleaning gas into the chamber and forming a plasma in the chamber from the cleaning gas.
Claim 9
Dependent Claim
68 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , further comprising flowing a silicon source gas into the chamber, wherein the flowing of the silicon source gas into the chamber, purging the first carrier gas line to, supplying the cleaning gas, forming a plasma in the chamber, and purging the reaction gas line are performed just before a deposition process.
Claim 10
Dependent Claim
83 words
A method for removing particulate contaminants in a silicide deposition process, as recited in claim 1 , further comprising flowing a silicon source gas into the chamber, wherein the flowing of the silicon source gas into the chamber, purging the first carrier gas line to, supplying the cleaning gas, forming a plasma in the chamber, and purging the reaction gas line are performed periodically at regular time intervals when the chamber is in an idle state during which a deposition process is paused.
Claim 11
Dependent Claim
144 words
A chemical vapor deposition system for a silicide deposition process, comprising: a chamber for performing a silicide deposition process; a first carrier gas line for supplying a carrier gas to the chamber; a source gas line connected to the first carrier gas line for supplying a silicon source gas to the first carrier gas line and to the chamber via the first carrier gas line; a second carrier gas line for supplying the carrier gas to the chamber; a reaction gas line connected to the second carrier gas line for supplying a reaction gas to the second carrier gas line and to the chamber via the second carrier gas line; and a purging device for preventing a cleaning gas from remaining in the second carrier gas line and the reaction gas line and from acting as a particulate contaminant during the silicide deposition process.
Claim 12
Dependent Claim
144 words
A chemical vapor deposition system for a silicide deposition process, comprising: a chamber for performing a silicide deposition process; a first carrier gas line for supplying a carrier gas to the chamber; a source gas line connected to the first carrier gas line for supplying a silicon source gas to the first carrier gas line and to the chamber via the first carrier gas line; a second carrier gas line for supplying the carrier gas to the chamber; a reaction gas line connected to the second carrier gas line for supplying a reaction gas to the second carrier gas line and to the chamber via the second carrier gas line; and a purging device for preventing a cleaning gas from remaining in the second carrier gas line and the reaction gas line and from acting as a particulate contaminant during the silicide deposition process.
Claim 13
Dependent Claim
33 words
A chemical vapor deposition system, as recited in claim 10 , wherein the purging device comprises a cleaning gas line connected directly with the chamber to provide the cleaning gas to the chamber.
Claim 14
Dependent Claim
33 words
A chemical vapor deposition system, as recited in claim 11 , wherein the second carrier gas line provides the reaction gas, carrier gas, and cleaning gas to an upper zone of the chamber.
Claim 15
Dependent Claim
96 words
A chemical vapor deposition system, as recited in claim 10 , wherein the purging device comprises: a cleaning gas line connected to the second carrier gas line for supplying the cleaning gas to the second carrier gas line and to the chamber via the second carrier gas line; and an exhaust line connected to the second carrier gas line, and exhausting the cleaning gas from the reaction gas line, the second carrier gas line, and cleaning gas line, whereby the exhaust line is connected to the second carrier gas line adjacent to the cleaning gas line.
Claim 16
Dependent Claim
33 words
A chemical vapor deposition system, as recited in claim 13 , wherein the second carrier gas line provides the reaction gas, carrier gas, and cleaning gas to an upper zone of the chamber.
Claim 17
Dependent Claim
20 words
A chemical vapor deposition system, as recited in claim 13 , wherein the exhaust line is connected to a pump.
Claim 18
Dependent Claim
60 words
A chemical vapor deposition system, as recited in claim 10 , further comprising a third carrier gas line divided from the first carrier gas line before the first carrier gas line is connected with the source gas line, the third carrier gas line being connected to the chamber to provide the carrier gas to a bottom zone of the chamber.
Claim 19
Dependent Claim
20 words
A chemical vapor deposition system, as recited in claim 10 , wherein the silicon source gas is SiH 4 .
Claim 20
Dependent Claim
19 words
A chemical vapor deposition system, as recited in claim 10 , wherein the cleaning gas is NF 3 .
Claim 21
Dependent Claim
17 words
A chemical vapor deposition system, as recited in claim 10 , wherein the carrier gas is argon.
Claim 22
Dependent Claim
19 words
A chemical vapor deposition system, as recited in claim 10 , wherein the reaction gas is WF 6 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |