Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof

Claim 1

A CVD apparatus comprising: a vacuum transfer module having a transfer mechanism therein; a CVD vacuum processing chamber having a gate connected to the transfer module; gas inlet structure positioned in the processing chamber and oriented to direct a flow of gas against a substrate on a support; a reactant gas source of a compound of titanium, selectively connectable to the gas inlet structure; a titanium containing reactant gas in the CVD vacuum processing chamber capable of producing a CVD reaction for depositing on the substrate a film consisting essentially of titanium or titanium nitride; a cleaning module having a vacuum cleaning chamber therein, a substrate support in the cleaning chamber and a gate connected to the transfer module; gas flow ports in the cleaning module; a cleaning gas source of hydrogen and argon, selectively connectable to the gas flow ports; a gas mixture of hydrogen and argon in the cleaning chamber, the hydrogen comprising between 20 percent and 80 percent by volume: a coil surrounding the cleaning chamber; an RF energy source connected to the coil for inductive coupling into the cleaning chamber through the coil to produce an inductively coupled plasma in the hydrogen and argon gas mixture in the chamber; a heater positioned to heat a substrate on the support in the cleaning chamber during cleaning thereof to a temperature of at least 400° C.; and control means for operating the apparatus to place, with the transfer arm, a substrate into the cleaning chamber and onto the support therein, regulating a flow of argon and hydrogen from the gas source to the cleaning chamber to supply the hydrogen and argon gas mixture with 20 to 80 percent by volume hydrogen, activating the heater to heat the substrate on the support in the cleaning chamber, energizing a plasma in the hydrogen and argon gas mixture and cleaning contacts on the heated substrate in the cleaning chamber therewith, transferring the cleaned substrate from the cleaning chamber under vacuum into the CVD processing chamber, and producing a CVD reaction in the CVD processing chamber to deposit on the substrate a film consisting essentially of titanium or titanium nitride.