Abstract A plasma generating apparatus includes a container defining a hermetic process room. The container is connected to an exhaust for exhausting an interior of the process room and setting the interior of the process room to a vacuum, and a supply for supplying a process gas into the process room. First and second coils are wound on the outer surface of the container and disposed coaxially in order to generate in the process room an electric field for converting the process gas into a plasma. The first and second coils are connected to first and second RF power supplies for respectively applying first and second RF powers. The first and second RF powers respectively have first and second frequencies. The first and second frequencies are both 2 MHz or more, and a difference between them is set to fall in a range of from 1 kHz to 2 MHz. Hence, mutual interference of the first and second RF powers generates a synthesized wave having a periodically changing amplitude. This synthesized wave generates in the process room a synthesized wave electric field to which ions in the plasma can follow. The synthesized wave electric field is utilized for controlling progress of dissociation of the process gas in the plasma.
A plasma generating apparatus comprising: a container defining a hermetic process room; an exhaust means for exhausting an interior of the process room and setting the interior of said process room to a vacuum; a supply for supplying a process gas into said process room; first and second coils for generating in said process room an electric field for converting the process gas into a plasma; and first and second RF power supplies for respectively applying first and second RF powers to said first and second coils, the first and second RF powers respectively having first and second frequencies not less than 2 MHZ and different from each other, a difference between the first and second frequencies being set such that mutual interference of the first and second RF powers generates a synthesized wave having a periodically changing amplitude to generate in said process room a synthesized wave electric field to which ions in the plasma can follow, and the synthesized wave electric field being utilized for controlling progress of dissociation of the process gas in the plasma, wherein said first coil and said first RF power supply form a first parallel resonance circuit together with a capacitor, and said second coil and second RF power supply form a second parallel resonance circuit together with a capacitor.
Claim 2
Dependent Claim
217 words
A plasma generating apparatus comprising: a container defining a hermetic process room; an exhaust means for exhausting an interior of the process room and setting the interior of said process room to a vacuum; a supply for supplying a process gas into said process room; first and second coils for generating in said process room an electric field for converting the process gas into a plasma; and first and second RF power supplies for respectively applying first and second RF powers to said first and second coils, the first and second RF powers respectively having first and second frequencies not less than 2 MHZ and different from each other, a difference between the first and second frequencies being set such that mutual interference of the first and second RF powers generates a synthesized wave having a periodically changing amplitude to generate in said process room a synthesized wave electric field to which ions in the plasma can follow, and the synthesized wave electric field being utilized for controlling progress of dissociation of the process gas in the plasma, wherein said first coil and said first RF power supply form a first parallel resonance circuit together with a capacitor, and said second coil and second RF power supply form a second parallel resonance circuit together with a capacitor.
Claim 3
Dependent Claim
29 words
An apparatus according to claim 1, wherein the difference between the first and second frequencies is set to fall within a range of from 1 kHz to 2 MHz.
Claim 4
Dependent Claim
23 words
An apparatus according to claim 1, wherein said first and second parallel resonance circuits are connected to each other through a variable capacitor.
Claim 5
Dependent Claim
24 words
An apparatus according to claim 1, wherein said first and second coils are wound on an outer surface of said container and arranged coaxially.
Claim 6
Dependent Claim
34 words
An apparatus according to claim 1, further comprising a work table disposed in said process room to support a target substrate, the target substrate being subjected to a processing operation by using the plasma.