Patent EP0132511A2 successfully refreshed from Google Patents.
Patent US6326849B1 successfully refreshed from Google Patents.
US6326849B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Isolation circuit for use in RF amplifier bias circuit
Assignee: Eutrend Tech Inc
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Filing: 2000-09-28
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Granted: 2001-12-04
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Expires: 2020-09-28
Abstract
Abstract In an RF amplifier circuit having a plurality of transistor stages with each transistor having an input terminal for receiving an RF signal, a bias circuit is provided for applying a DC bias to the input terminal of a transistor. An isolation circuit connects a DC power supply to a bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated. The isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground which can comprise a capacitor or a serial inductor/capacitor circuit. The reactive serial path can comprise an inductor or an inductor/capacitor parallel circuit.
Inventors
- 👤 Nanlei Larry Wang
- 👤 Shuo-Yuan Hsiao
- 👤 Wei-Shu Zhou
- 👤 Shihui Xu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:58
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/56; H03F1/565; H03F1/30; H03F1/302; H03F3/00; H03F3/72; H03F2203/00; H03F2203/72; H03F2203/7206
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
122 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow wherein the reactive serial path comprises an inductor/capacitor parallel circuit.
Claim 2
Dependent Claim
122 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow wherein the reactive serial path comprises an inductor/capacitor parallel circuit.
Claim 3
Dependent Claim
131 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow, and a reactive shunt path to ground comprising two capacitors connected to opposing ends of the reactive serial path.
Claim 4
Dependent Claim
131 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow, and a reactive shunt path to ground comprising two capacitors connected to opposing ends of the reactive serial path.
Claim 5
Dependent Claim
133 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow and a reactive shunt path to ground comprising two serial inductor/capacitor circuits connected to opposing ends of the reactive serial path.
Claim 6
Dependent Claim
133 words
For use in an RF amplifier having a plurality of transistor stages, a circuit for applying a DC bias voltage to the input terminal of one of the transistors comprising: a) a power terminal for receiving a DC voltage, b) a bias circuit connected to the input terminal of the transistor, and c) an isolation circuit for connecting the power terminal to the bias circuit whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from the transistor input terminal is attenuated, the isolation circuit including a reactive serial path which allows the flow of a DC current and presents an impedance to RF current flow and a reactive shunt path to ground comprising two serial inductor/capacitor circuits connected to opposing ends of the reactive serial path.
Claim 7
Dependent Claim
122 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, each isolation circuit including a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow wherein the reactive serial path comprises an inductor/capacitor parallel circuit.
Claim 8
Dependent Claim
122 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, each isolation circuit including a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow wherein the reactive serial path comprises an inductor/capacitor parallel circuit.
Claim 9
Dependent Claim
137 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, wherein each isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground, wherein the reactive shunt path comprises two capacitors connected to opposing ends of the reactive serial path.
Claim 10
Dependent Claim
137 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, wherein each isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground, wherein the reactive shunt path comprises two capacitors connected to opposing ends of the reactive serial path.
Claim 11
Dependent Claim
139 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, wherein each isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground, wherein the reactive shunt path comprises two serial inductor/capacitor circuits connected to opposing ends of the reactive serial path.
Claim 12
Dependent Claim
139 words
An RF amplifier circuit comprising: a) a plurality of transistors serially coupled to receive RF signals at an input terminal of each transistor, b) a plurality of bias circuits each connected to an input terminal of a transistor for applying a DC bias voltage, c) a DC power terminal, and d) a plurality of isolation circuits each connecting the DC power terminal to a bias circuit, whereby DC voltage from the power terminal is applied to the bias circuit and RF signal from a transistor input terminal is attenuated, wherein each isolation circuit includes a reactive serial path which allows the flow of DC current and presents an impedance to RF current flow and a reactive shunt path to ground, wherein the reactive shunt path comprises two serial inductor/capacitor circuits connected to opposing ends of the reactive serial path.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-03 | 2005-06-04 | 2005-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-03 | 2009-06-04 | 2009-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-03 | 2013-06-04 | 2013-12-04 | $7700.00 | Window Closed / Lapsed |