US6326698B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices having protective layers thereon through which contact pads are exposed and stereolithographic methods of fabricating such semiconductor devices
Assignee: Micron Technology Inc
•
Filing: 2000-06-08
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Granted: 2001-12-04
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Expires: 2020-06-08
Abstract
Abstract A method for forming packaged substrates, including flip-chip dice individually or in a multi-die wafer. The method includes using a stereolithographic process to form a protective dielectric polymeric sealing structure on at least the active surface of the substrate. In addition, the invention encompasses forming a similar layer on a second substrate to be joined to the first substrate. Contact pads of the second substrate are exposed through the layer thereon to facilitate joining of the two substrates. Semiconductor devices formed by the method are also disclosed.
Inventors
- 👤 Salman Akram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:07
CPC Classifications
H; H10; H10W; H10W72/00; B; B33; B33Y; B33Y10/00; B33Y30/00; B33Y50/00; B33Y80/00; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3452; H10D; H10D62/00; H10D62/10; H10D62/117; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/111; H10W74/129; H10W74/131; H10W74/147; H10W74/15; H05K2201/00; H05K2201/01; H05K2201/0183; H05K2201/0195; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10734; H05K2201/10954; H05K2201/10977; H05K3/341; H05K3/3431; H05K3/3436; H10W72/01; H10W72/013; H10W72/01331; H10W72/01361; H10W72/0198; H10W72/071; H10W72/073; H10W72/07321; H10W72/07327; H10W72/20; H10W72/241; H10W72/242; H10W72/251; H10W72/252; H10W72/30; H10W72/321; H10W72/322; H10W72/331; H10W72/851; H10W72/853; H10W72/856; H10W72/90; H10W72/941; H10W72/9415; H10W72/944; H10W72/9445; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
85 words
A method of packaging at least one semiconductor device substrate, comprising: providing at least one semiconductor device substrate with at least one contact pad exposed to an active surface thereof; submerging said at least one substrate in a photopolymeric liquid material to a depth forming a thin layer thereof on at least a portion of said active surface; and selectively subjecting said thin layer of photopolymeric liquid material to polymerizing radiation to form a layer comprising at least semisolid polymer material on said active surface.
Claim 2
Independent Claim
85 words
A method of packaging at least one semiconductor device substrate, comprising: providing at least one semiconductor device substrate with at least one contact pad exposed to an active surface thereof; submerging said at least one substrate in a photopolymeric liquid material to a depth forming a thin layer thereof on at least a portion of said active surface; and selectively subjecting said thin layer of photopolymeric liquid material to polymerizing radiation to form a layer comprising at least semisolid polymer material on said active surface.
Claim 3
Dependent Claim
22 words
The method of claim 1 , wherein said selectively subjecting comprises adhering said photopolymeric liquid material to at least said active surface.
Claim 4
Dependent Claim
56 words
The method of claim 1 , wherein, following said selectively subjecting, said submerging is repeated at least one time at a progressively greater depth and said selectively subjecting is sequentially repeated at least one time to form a polymeric structure having a plurality of superimposed, contiguous, mutually adhered layers of predetermined thickness on said active surface.
Claim 5
Dependent Claim
22 words
The method of claim 3 , wherein said submerging and said selectively subjecting form a polymeric structure with a substantially planar surface.
Claim 6
Dependent Claim
18 words
The method of claim 4 , wherein said substantially planar surface is substantially parallel to said active surface.
Claim 7
Dependent Claim
25 words
The method of claim 1 , further comprising further curing at least one of said at least semisolid polymer material and uncured photopolymeric liquid material.
Claim 8
Dependent Claim
18 words
The method of claim 6 , wherein said further curing comprises heating said at least semisolid polymer material.
Claim 9
Dependent Claim
20 words
The method of claim 6 , wherein said further curing comprises only partially curing said at least semisolid polymer material.
Claim 10
Dependent Claim
12 words
The method of claim 1 , wherein said selectively subjecting comprises stereolithography.
Claim 11
Dependent Claim
49 words
The method of claim 1 , further comprising providing another layer of photopolymeric liquid material on a backside of said at least one substrate and subjecting said photopolymeric liquid material on said backside to polymerizing radiation to form another layer comprising at least semisolid polymeric material on said backside.
Claim 12
Dependent Claim
13 words
The method of claim 10 , further comprising further curing said another layer.
Claim 13
Dependent Claim
23 words
The method of claim 1 , wherein said submerging comprises permitting said photopolymeric liquid material to contact recessed areas on said active surface.
Claim 14
Dependent Claim
19 words
The method of claim 1 , wherein said providing said at least one substrate comprises providing a semiconductor wafer.
Claim 15
Dependent Claim
21 words
The method of claim 1 , further comprising securing at least one conductive structure to said at least one contact pad.
Claim 16
Dependent Claim
22 words
The method of claim 1 , wherein said selectively subjecting comprises selectively subjecting said photopolymeric liquid material to a focused laser beam.
Claim 17
Independent Claim
172 words
A method for forming sealed electrical connections between at least one flip-chip type semiconductor die and a substrate, comprising the steps of: providing at least one semiconductor die having an active surface with at least one bond pad exposed thereto; securing at least one conductive structure to said at least one bond pad; stereolithographically forming a layer of at least semisolid polymeric material on said active surface so as to permit said at least one conductive structure to protrude from said layer upon said securing; providing a substrate having a surface with at least one corresponding contact pad located correspondingly to said at least one bond pad; forming a layer of polymeric material on said surface of said substrate, said at least one corresponding contact pad being exposed through said layer of polymeric material; aligning said at least one bond pad with said at least one corresponding contact pad; and connecting said at least one bond pad to said at least one corresponding contact pad with said at least one conductive structures.
Claim 18
Independent Claim
172 words
A method for forming sealed electrical connections between at least one flip-chip type semiconductor die and a substrate, comprising the steps of: providing at least one semiconductor die having an active surface with at least one bond pad exposed thereto; securing at least one conductive structure to said at least one bond pad; stereolithographically forming a layer of at least semisolid polymeric material on said active surface so as to permit said at least one conductive structure to protrude from said layer upon said securing; providing a substrate having a surface with at least one corresponding contact pad located correspondingly to said at least one bond pad; forming a layer of polymeric material on said surface of said substrate, said at least one corresponding contact pad being exposed through said layer of polymeric material; aligning said at least one bond pad with said at least one corresponding contact pad; and connecting said at least one bond pad to said at least one corresponding contact pad with said at least one conductive structures.
Claim 19
Dependent Claim
24 words
The method of claim 16 , further comprising securing said layer on said at least one semiconductor die to said layer on said substrate.
Claim 20
Dependent Claim
30 words
The method of claim 17 , wherein said securing said layers comprises further curing said at least semisolid polymeric material of said layer on said at least one semiconductor die.
Claim 21
Dependent Claim
18 words
The method of claim 16 , wherein said connecting comprises thermally reflowing said at least one conductive structure.
Claim 22
Dependent Claim
38 words
The method of claim 16 , wherein said connecting comprises disposing at least one conductive structure comprising z-axis conductive elastomer in contact with said at least one bond pad and with said at least one corresponding contact pad.
Claim 23
Dependent Claim
37 words
The method of claim 16 , wherein said connecting comprises disposing at least one conductive structure comprising a conductive or conductor-filled epoxy between said at least one bond pad and said at least one corresponding contact pad.
Claim 24
Dependent Claim
92 words
The method of claim 16 , wherein said stereolithographically forming comprises: submerging said at least one semiconductor die in a liquid photopolymeric material to a depth forming a layer above said active surface; selectively subjecting said layer of liquid photopolymeric material to polymerizing radiation whereby said liquid photopolymeric material forms an at least semisolid state; and repeating said submerging to at least one progressively greater depth and subjecting at least one additional layer of photopolymeric material to radiation to form a plurality of superimposed, contiguous, mutually-adhered layers of at least semisolid material.
Claim 25
Dependent Claim
33 words
The method of claim 22 , wherein said selectively subjecting said layer of liquid photopolymeric material to polymerizing radiation comprises selectively subjecting said layer of liquid photopolymeric material to a focused laser beam.
Claim 26
Dependent Claim
25 words
The method of claim 16 , wherein said forming said layer of polymeric material on said substrate comprises stereolithographically forming said layer on said substrate.
Claim 27
Dependent Claim
57 words
The method of claim 24 , wherein said stereolithographically forming comprises submerging said surface of said substrate in liquid photopolymeric material to a depth forming a layer above said surface and selectively subjecting said layer above said surface to polymerizing radiation to form a layer of at least semisolid polymeric material on said surface of said substrate.
Claim 28
Dependent Claim
24 words
The method of claim 16 , further comprising forming a layer of polymeric material on a backside of said at least one semiconductor die.
Claim 29
Dependent Claim
39 words
The method of claim 26 , wherein said forming said layer of polymeric material on said backside comprises providing a layer of photopolymeric liquid material on said backside and subjecting said layer of photopolymeric liquid material to polymerizing radiation.
Claim 30
Dependent Claim
26 words
The method of claim 16 , wherein said providing said at least one semiconductor die comprises providing a wafer with a plurality of semiconductor dice thereon.
Claim 31
Independent Claim
119 words
A method for packaging a plurality of semiconductor devices, comprising: providing a wafer with a plurality of semiconductor devices, each having an active surface with at least one bond pad thereon; defining peripheries of selected ones of said plurality of semiconductor devices; securing at least one conductive structure to said at least one bond pad; placing said wafer at a horizontal plane; recognizing a location and orientation of said at least one bond pad of each of said plurality of semiconductor devices of said wafer; and stereolithographically forming a structure comprising at least one layer of semi-solid material covering said active surface of each semiconductor device so as to permit said at least one conductive structure to protrude therefrom.
Claim 32
Independent Claim
119 words
A method for packaging a plurality of semiconductor devices, comprising: providing a wafer with a plurality of semiconductor devices, each having an active surface with at least one bond pad thereon; defining peripheries of selected ones of said plurality of semiconductor devices; securing at least one conductive structure to said at least one bond pad; placing said wafer at a horizontal plane; recognizing a location and orientation of said at least one bond pad of each of said plurality of semiconductor devices of said wafer; and stereolithographically forming a structure comprising at least one layer of semi-solid material covering said active surface of each semiconductor device so as to permit said at least one conductive structure to protrude therefrom.
Claim 33
Dependent Claim
111 words
The method of claim 29 , wherein said stereolithographically forming comprises: storing data including at least one physical parameter of each of the plurality of semiconductor devices in computer memory and using the stored data in conjunction with a machine vision system to recognize a location of each semiconductor device of the plurality and said at least one bond pad thereof; and using the stored data, in conjunction with the machine vision system, to selectively apply the at least one layer of semisolid material stereolithographically to said active surface of each semiconductor device without covering one of said at least one bond pad thereof and said at least one conductive structure.
Claim 34
Independent Claim
120 words
A method for disposing material within interstitial spaces on a surface of a substrate, the interstitial spaces being located between conductive structures protruding from the substrate, said method comprising: providing a first substrate with conductive structures protruding from a surface thereof; stereolithographically forming at least one first substantially void-free layer of photopolymeric material on said surface including within interstitial spaces; providing a second substrate having a surface with contact pads located correspondingly to positions of said conductive structures on said surface of said first substrate; stereolithographically forming at least one second substantially void-free layer of photopolymeric material on said surface of said second substrate with said contact pads being exposed therethrough; and joining said conductive structures to said contact pads.
Claim 35
Independent Claim
120 words
A method for disposing material within interstitial spaces on a surface of a substrate, the interstitial spaces being located between conductive structures protruding from the substrate, said method comprising: providing a first substrate with conductive structures protruding from a surface thereof; stereolithographically forming at least one first substantially void-free layer of photopolymeric material on said surface including within interstitial spaces; providing a second substrate having a surface with contact pads located correspondingly to positions of said conductive structures on said surface of said first substrate; stereolithographically forming at least one second substantially void-free layer of photopolymeric material on said surface of said second substrate with said contact pads being exposed therethrough; and joining said conductive structures to said contact pads.
Claim 36
Dependent Claim
29 words
The method of claim 31 , wherein said joining comprises further polymerizing said photopolymeric material of said at least one first layer and said at least one second layer.
Claim 37
Dependent Claim
24 words
The method of claim 31 , further comprising applying at least one layer of protective polymeric material to a backside of said first substrate.
Claim 38
Dependent Claim
20 words
The method of claim 33 , wherein said applying comprises stereolithographically forming said at least one layer on said backside.
Claim 39
Dependent Claim
28 words
The method of claim 31 , wherein said joining comprises substantially filling a space in said at least one second layer through which said contact pads are exposed.
Claim 40
Dependent Claim
38 words
The method of claim 31 , wherein said joining comprises bonding said at least one first layer of polymeric material on said first substrate and said at least one second layer of polymeric material on said second substrate.
Claim 41
Dependent Claim
183 words
A semiconductor device assembly comprising: a first substrate having a first active surface with at least one first contact pad exposed thereto; at least one first layer of at least semisolid photopolymer material on said first active surface, said at least one first contact pad being electrically exposed through said at least one first layer; a second substrate having a second active surface with at least one second contact pad exposed thereto; at least one second layer of at least semisolid photopolymer material on said second active surface, said at least one second contact pad being electrically exposed through said at least one second layer and located on said second active surface to correspond to a position of said at least one first contact pad on said first active surface, said at least one second layer contacting said at least one first layer; and at least one conductive structure disposed in contact with said at least one first contact pad and said at least one second contact pad, said at least one conductive structure being laterally surrounded by at least semisolid photopolymer material.
Claim 42
Dependent Claim
183 words
A semiconductor device assembly comprising: a first substrate having a first active surface with at least one first contact pad exposed thereto; at least one first layer of at least semisolid photopolymer material on said first active surface, said at least one first contact pad being electrically exposed through said at least one first layer; a second substrate having a second active surface with at least one second contact pad exposed thereto; at least one second layer of at least semisolid photopolymer material on said second active surface, said at least one second contact pad being electrically exposed through said at least one second layer and located on said second active surface to correspond to a position of said at least one first contact pad on said first active surface, said at least one second layer contacting said at least one first layer; and at least one conductive structure disposed in contact with said at least one first contact pad and said at least one second contact pad, said at least one conductive structure being laterally surrounded by at least semisolid photopolymer material.
Claim 43
Dependent Claim
27 words
The semiconductor device assembly of claim 37 , wherein said at least one first layer and said at least one second layer are secured to one another.
Claim 44
Dependent Claim
33 words
The semiconductor device assembly of claim 37 , wherein said at least semisolid photopolymer material of said at least one first layer and of said at least one second layer is substantially solid.
Claim 45
Dependent Claim
28 words
The semiconductor device assembly of claim 37 , wherein said at least one first layer comprises a plurality of superimposed, contiguous, mutually adhered first layers of photopolymer material.
Claim 46
Dependent Claim
28 words
The semiconductor device assembly of claim 37 , wherein said at least one second layer comprises a plurality of superimposed, contiguous, mutually adhered second layers of photopolymer material.
Claim 47
Dependent Claim
38 words
The semiconductor device assembly of claim 37 , wherein said at least semisolid photopolymer material of said at least one first layer and of said at least one second layer substantially contacts said at least one conductive structure.
Claim 48
Dependent Claim
20 words
The semiconductor device assembly of claim 37 , wherein said at least one first layer has a substantially planar surface.
Claim 49
Dependent Claim
20 words
The semiconductor device assembly of claim 37 , wherein said at least one second layer has a substantially planar surface.
Claim 50
Dependent Claim
26 words
The semiconductor device assembly of claim 37 , wherein said at least one first layer and said at least one second layer substantially contact each other.
Claim 51
Dependent Claim
21 words
The semiconductor device assembly of claim 37 , wherein said at least one first layer is substantially free of internal voids.
Claim 52
Dependent Claim
21 words
The semiconductor device assembly of claim 37 , wherein said at least one second layer is substantially free of internal voids.
Claim 53
Dependent Claim
71 words
A packaged semiconductor device, comprising: a substrate having an active surface with at least one contact pad exposed thereto; and a plurality of layers of at least semisolid photopolymer material on said active surface, said plurality of layers being superimposed, contiguous, and mutually adhered, each layer of said plurality of layers being substantially free of internal voids, said at least one contact pad being electrically exposed through said plurality of layers.
Claim 54
Dependent Claim
71 words
A packaged semiconductor device, comprising: a substrate having an active surface with at least one contact pad exposed thereto; and a plurality of layers of at least semisolid photopolymer material on said active surface, said plurality of layers being superimposed, contiguous, and mutually adhered, each layer of said plurality of layers being substantially free of internal voids, said at least one contact pad being electrically exposed through said plurality of layers.
Claim 55
Dependent Claim
51 words
The packaged semiconductor device of claim 48 , further comprising at least one conductive structure disposed in contact with said at least one contact pad, said at least one conductive structure being laterally surrounded by said at least semisolid photopolymer material of at least some layers of said plurality of layers.
Claim 56
Dependent Claim
29 words
The packaged semiconductor device of claim 49 , wherein said at least semisolid photopolymer material of said at least some layers laterally contacts said at least one conductive structure.
Claim 57
Dependent Claim
33 words
The packaged semiconductor device of claim 49 , wherein said at least one conductive structure comprises one of a metal, a metal alloy, a conductive epoxy, a conductor-filled epoxy, and a z-axis elastomer.
Claim 58
Dependent Claim
18 words
The packaged semiconductor device of claim 48 , wherein a surface of said plurality of layers is planar.
Claim 59
Dependent Claim
23 words
The packaged semiconductor device of claim 48 , wherein a surface of said plurality of layers is substantially parallel to said active surface.
Claim 60
Dependent Claim
17 words
The packaged semiconductor device of claim 48 , wherein said substrate comprises a flip-chip type semiconductor device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-03 | 2005-06-04 | 2005-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-03 | 2009-06-04 | 2009-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-03 | 2013-06-04 | 2013-12-04 | $7700.00 | Window Closed / Lapsed |