Mosfet through silicon modulator and method

Claim 2

An integrated circuit optical modulator comprising: an isolation well fabricated in a substrate of an integrated circuit; a plurality of source/drain regions fabricated in the isolation well; and a two-dimensional gate electrode array fabricated on top of the isolation well, such that the plurality of source/drain regions are located in openings in the two-dimensional gate electrode array, wherein the plurality of source/drain regions provide a reflected light reference and a phase of light reflected from the two-dimensional gate electrodes array is controlled in response to a voltage signal applied to either the isolation well or the two-dimensional gate electrode array such that light passing through the substrate is reflected by the gate electrode array and passes through at least two electrical accumulation layers when the voltage signal is in a first state.

Claim 3

The integrated circuit optical modulator of claim 1 wherein the two-dimensional gate electrode array comprises a plurality of perpendicular gate electrode strips fabricated to form a gate electrode grid.

Claim 4

The integrated circuit optical modulator of claim 1 wherein a surface area of the plurality of source/drain regions is substantially equal to a surface area of the two-dimensional gate electrode array.

Claim 5

The integrated circuit optical modulator of claim 1 further comprising a layer of silicide fabricated on top of the plurality of source/drain regions to provide a reflecting surface.

Claim 6

The integrated circuit optical modulator of claim 1 wherein the isolation well is n-doped, the plurality of source/drain regions are p-doped, and the two-dimensional gate electrode array is p-doped poly silicon.

Claim 7

An integrated circuit optical modulator comprising: an n-doped isolation well fabricated in a p-doped substrate of an integrated circuit; a plurality of p-doped source/drain regions fabricated in the n-doped isolation well; a two-dimensional gate electrode array fabricated on top of the isolation well, and having a plurality of perpendicular gate electrode strips fabricated to form a gate electrode grid, wherein the plurality of p-doped source/drain regions are located in openings of the gate electrode grid; and wherein the plurality of source/drain regions provide a reflected light reference and a phase of light reflected from the two-dimensional gate electrode array, is controlled in response to a voltage signal applied to either the n-doped isolation well or the two-dimensional gate electrode array such that light passing through the substrate is reflected by the gate electrode array, and passes through at least two electrical accumulation layers when the voltage signal is in a first state.

Claim 8

An integrated circuit optical modulator comprising: an n-doped isolation well fabricated in a p-doped substrate of an integrated circuit; a plurality of p-doped source/drain regions fabricated in the n-doped isolation well; a two-dimensional gate electrode array fabricated on top of the isolation well, and having a plurality of perpendicular gate electrode strips fabricated to form a gate electrode grid, wherein the plurality of p-doped source/drain regions are located in openings of the gate electrode grid; and wherein the plurality of source/drain regions provide a reflected light reference and a phase of light reflected from the two-dimensional gate electrode array, is controlled in response to a voltage signal applied to either the n-doped isolation well or the two-dimensional gate electrode array such that light passing through the substrate is reflected by the gate electrode array, and passes through at least two electrical accumulation layers when the voltage signal is in a first state.

Claim 9

An integrated circuit optical modulator comprising: an isolation well fabricated in a substrate of an integrated circuit; a first plurality of gate electrode strips fabricated on top of the isolation well and extending in a first direction; a second plurality of gate electrode strips fabricated on top of the isolation well and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of source/drain regions fabricated in the isolation well and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the isolation well and provide a reflected light reference, the second plurality of gate electrode strips provide reflected light having a phase dependent upon a state of the signal.

Claim 10

An integrated circuit optical modulator comprising: an isolation well fabricated in a substrate of an integrated circuit; a first plurality of gate electrode strips fabricated on top of the isolation well and extending in a first direction; a second plurality of gate electrode strips fabricated on top of the isolation well and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of source/drain regions fabricated in the isolation well and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the isolation well and provide a reflected light reference, the second plurality of gate electrode strips provide reflected light having a phase dependent upon a state of the signal.

Claim 11

The integrated circuit optical modulator of claim 7 wherein the first and second plurality of gate electrode strips comprise equal numbers of gate electrode strips.

Claim 12

The integrated circuit optical modulator of claim 7 wherein the isolation well is an n-doped isolation well fabricated in a p-doped substrate.

Claim 13

The integrated circuit optical modulator of claim 9 wherein the first and second plurality of gate electrode strips comprise p-doped poly silicon.

Claim 14

The integrated circuit optical modulator of claim 7 wherein the plurality of source/drain regions are coupled to receive a ground potential.

Claim 15

An integrated circuit optical modulator comprising: an n-doped isolation well fabricated in a p-doped substrate of the integrated circuit; a first plurality of p-doped gate electrode strips fabricated on top of the isolation well and extending in a first direction; a second plurality of p-doped gate electrode strips fabricated on top of the isolation well and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of p-doped source/drain regions fabricated in the isolation well and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the isolation well and provide a reflected light reference, the second plurality of gate electrode strips provide reflected light having a phase dependent upon a state of the signal.

Claim 16

An integrated circuit optical modulator comprising: an n-doped isolation well fabricated in a p-doped substrate of the integrated circuit; a first plurality of p-doped gate electrode strips fabricated on top of the isolation well and extending in a first direction; a second plurality of p-doped gate electrode strips fabricated on top of the isolation well and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of p-doped source/drain regions fabricated in the isolation well and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the isolation well and provide a reflected light reference, the second plurality of gate electrode strips provide reflected light having a phase dependent upon a state of the signal.

Claim 17

The integrated circuit optical modulator of claim 12 wherein the first and second plurality of gate electrode strips comprise equal numbers of gate electrode strips.

Claim 20

The method of claim 14 wherein the gate electrode is fabricated with a plurality of first and second polysilicon strips overlapping and extending in perpendicular directions to form a two-dimensional grid.

Claim 21

The method of claim 14 wherein a surface area of the plurality of first reflecting areas is approximately equal to a surface area of the second reflecting area.

Claim 22

The method of claim 14 wherein the plurality of first reflecting areas are source/drain regions formed in an isolation well located in the substrate of the integrated circuit.

Claim 23

The method of claim 17 wherein a top surface of the source/drain regions is covered with a silicide layer.

Claim 26

The method of claim 19 wherein integrated circuit comprises an isolation well fabricated in the substrate, and the plurality of first and second gates are fabricated above the isolation well.

Claim 27

The method of claim 20 wherein the first and second gates are fabricated as substantially parallel poly silicon strips.

Claim 28

The method of claim 20 wherein the isolation well is n-doped, the substrate is p-doped, and the first and second plurality of gates are p-doped.

Claim 29

An integrated circuit optical modulator comprising: a first plurality of gate electrode strips fabricated on top of a substrate of the integrated circuit and extending in a first direction; a second plurality of gate electrode strips fabricated on top of the substrate and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of source/drain regions fabricated in the substrate and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the substrate and provide a reflected light reference, the second plurality of gate electrode strips are coupled to receive a signal having a potential greater than a potential of the substrate to provide reflected light having a phase dependent upon a state of the signal.

Claim 30

An integrated circuit optical modulator comprising: a first plurality of gate electrode strips fabricated on top of a substrate of the integrated circuit and extending in a first direction; a second plurality of gate electrode strips fabricated on top of the substrate and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of source/drain regions fabricated in the substrate and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the substrate and provide a reflected light reference, the second plurality of gate electrode strips are coupled to receive a signal having a potential greater than a potential of the substrate to provide reflected light having a phase dependent upon a state of the signal.

Claim 31

The integrated circuit optical modulator of claim 23 wherein the first and second plurality of gate electrode strips comprise equal numbers of gate electrode strips.

Claim 32

A optical communications system comprising: an integrated circuit optical modulator located in an integrated circuit, the optical modulator provides signals using modulated light having phase shifts resulting from accumulation layers formed in the integrated circuit optical modulator, wherein a light beam enters through a substrate of the integrated circuit and is reflected such that a diffracted light beam is reflected from the optical modulator representing a state of the signals; an optical transmitter for providing the light beam; a receiver to receive the light beam reflected from the optical modulator, the optical receiver determines a state of the signals based on the reflected light; and a processor coupled to the optical receiver/transmitter for processing the signals provided via the optical receiver/transmitter.

Claim 33

A optical communications system comprising: an integrated circuit optical modulator located in an integrated circuit, the optical modulator provides signals using modulated light having phase shifts resulting from accumulation layers formed in the integrated circuit optical modulator, wherein a light beam enters through a substrate of the integrated circuit and is reflected such that a diffracted light beam is reflected from the optical modulator representing a state of the signals; an optical transmitter for providing the light beam; a receiver to receive the light beam reflected from the optical modulator, the optical receiver determines a state of the signals based on the reflected light; and a processor coupled to the optical receiver/transmitter for processing the signals provided via the optical receiver/transmitter.

Claim 34

The system of claim 25 wherein the integrated circuit optical modulator comprises: an n-doped isolation well fabricated in a p-doped substrate of the integrated circuit; a plurality of p-doped source/drain regions fabricated in the n-doped isolation well; a two-dimensional gate electrode array fabricated on top of the isolation well, and having a plurality of perpendicular gate electrode strips fabricated to form a gate electrode grid, wherein the plurality of p-doped source/drain regions are located in openings of the gate electrode grid; and wherein the plurality of source/drain regions provide a reflected light reference and a phase of light reflected from the two-dimensional gate electrode is controlled in response to a voltage signal applied to the either the n-doped isolation well or the two-dimensional gate electrode such that light passing through the substrate is reflected by the gate electrode and passes through at least two electrical accumulation layers when the voltage signal is in a first state.

Claim 35

The system of claim 25 wherein the integrated circuit optical modulator comprises: an n-doped isolation well fabricated in a p-doped substrate of the integrated circuit; a first plurality of p-doped poly silicon gate electrode strips fabricated on top of the isolation well and extending in a first direction; a second plurality of p-doped poly silicon gate electrode strips fabricated on top of the isolation well and extending in the first direction such that the first and second plurality of gate electrode strips are fabricated substantially parallel; a plurality of p-doped source/drain regions fabricated in the isolation well and located between the first and second plurality of gate electrode strips; and wherein the first plurality of gate electrode strips are electrically coupled to the isolation well and provide a reflected light reference, the second plurality of gate electrode strips provide reflected light having a phase dependent upon a state of the signal.