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US6319792B2
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Semiconductor device manufacturing method and semiconductor wafer
Assignee: Micron Memory Japan Ltd
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Filing: 2000-11-30
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Granted: 2001-11-20
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Expires: 2020-11-30
Abstract
Abstract In a method of manufacturing a semiconductor device, a first chip region and a second chip region are provided on a silicon wafer. A first resist pattern for the semiconductor device is to be formed in the first chip region, and the second chip region includes a plurality of characteristic evaluation regions for the semiconductor device, and a second resist pattern is to be formed in each of the plurality of characteristic evaluation regions for the semiconductor device. A data rate of the second chip region is determined based on a data rate of the first chip region. The data rate of the second chip region is determined such that a ratio of the data rate of the first chip region to the data rate of the second chip region is in a range of ¼ to 4.
Inventors
- 👤 Hidetoshi Sumitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:41
CPC Classifications
H; H10; H10P; H10P76/00; H10P74/00; H10P74/23; H10P74/27; H10P74/277
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
101 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a product chip region and a TEG chip region on a silicon wafer, wherein said TEG chip region includes a plurality of characteristic evaluation regions for said semiconductor device; forming a first resist pattern for said semiconductor device to be formed in said product chip region; forming a second resist pattern in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device; and determining a data rate of said TEG chip region based on a data rate of said product chip region.
Claim 2
Independent Claim
101 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a product chip region and a TEG chip region on a silicon wafer, wherein said TEG chip region includes a plurality of characteristic evaluation regions for said semiconductor device; forming a first resist pattern for said semiconductor device to be formed in said product chip region; forming a second resist pattern in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device; and determining a data rate of said TEG chip region based on a data rate of said product chip region.
Claim 3
Dependent Claim
52 words
The method according to claim 1 , wherein the data rate determining step determines said data rate of said product chip region such that a ratio of said data rate of said product chip region to said data rate of said TEG chip region is in a range of ¼ to 4.
Claim 4
Dependent Claim
86 words
The method according to claim 1 , wherein each of said plurality of characteristic evaluation regions includes a first region and a second region, and a size of said first region and a data rate of said first region being predetermined, the method further comprising the step of determining the number of said characteristic evaluation regions based on said size of said first region, said data rate of said first region, a data rate of said second region, and a size of said product chip region.
Claim 5
Dependent Claim
42 words
The method according to claim 3 , further comprising the step of determining a size of said second region based on the number of said characteristic evaluation regions, said size of said product chip region, and said size of said first region.
Claim 6
Dependent Claim
21 words
The method according to claim 3 , wherein said data rate of said second region is uniform over said second region.
Claim 7
Dependent Claim
18 words
The method according to claim 3 , wherein said data rate of said second region is locally high.
Claim 8
Dependent Claim
18 words
The method according to claim 3 , wherein said first region and said second region are provided adjacently.
Claim 9
Dependent Claim
39 words
The method according to claim 3 , wherein said first region is provided in said characteristic evaluation region at an optional position, and a region of said characteristic evaluation region other than said first region is said second region.
Claim 10
Independent Claim
109 words
A method of manufacturing a semiconductor device for storing a program in a recording medium, comprising the steps of: providing a product chip region and a TEG chip region on a silicon wafer, wherein said TEG chip region includes a plurality of characteristic evaluation regions for said semiconductor device; forming a first resist pattern for said semiconductor device to be formed in said product chip region; forming a second resist pattern in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device; and determining a data rate of said TEG chip region based on a data rate of said product chip region.
Claim 11
Independent Claim
109 words
A method of manufacturing a semiconductor device for storing a program in a recording medium, comprising the steps of: providing a product chip region and a TEG chip region on a silicon wafer, wherein said TEG chip region includes a plurality of characteristic evaluation regions for said semiconductor device; forming a first resist pattern for said semiconductor device to be formed in said product chip region; forming a second resist pattern in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device; and determining a data rate of said TEG chip region based on a data rate of said product chip region.
Claim 12
Dependent Claim
52 words
The method according to claim 9 , wherein the data rate determining step determines said data rate of said product chip region such that a ratio of said data rate of said product chip region to said data rate of said TEG chip region is in a range of ¼ to 4.
Claim 13
Dependent Claim
86 words
The method according to claim 9 , wherein each of said plurality of characteristic evaluation regions includes a first region and a second region, and a size of said first region and a data rate of said first region being predetermined, the method further comprising the step of determining the number of said characteristic evaluation regions based on said size of said first region, said data rate of said first region, a data rate of said second region, and a size of said product chip region.
Claim 14
Dependent Claim
42 words
The method according to claim 11 , further comprising the step of determining a size of said second region based on the number of said characteristic evaluation regions, said size of said first chip region, and said size of said first region.
Claim 15
Dependent Claim
21 words
The method according to claim 11 , wherein said data rate of said second region is uniform over said second region.
Claim 16
Dependent Claim
18 words
The method according to claim 11 , wherein said data rate of said second region is locally high.
Claim 17
Dependent Claim
18 words
The method according to claim 11 , wherein said first region and said second region are provided adjacently.
Claim 18
Dependent Claim
39 words
The method according to claim 11 , wherein said first region is provided in said characteristic evaluation region at an optional position, and a region of said characteristic evaluation region other than said first region is said second region.
Claim 19
Dependent Claim
99 words
A semiconductor wafer comprising: a product chip region; a TEG chip region; a first resist pattern for a semiconductor device formed in said product chip region; a plurality of characteristic evaluation regions for said semiconductor device in said TEG chip region; and a second resist pattern formed in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device, wherein each of said plurality of characteristic evaluation regions includes a first region and a second region, and a test pattern for characteristic test of said semiconductor device formed in said product chip region.
Claim 20
Dependent Claim
99 words
A semiconductor wafer comprising: a product chip region; a TEG chip region; a first resist pattern for a semiconductor device formed in said product chip region; a plurality of characteristic evaluation regions for said semiconductor device in said TEG chip region; and a second resist pattern formed in said TEG chip region, in each of said plurality of characteristic evaluation regions for said semiconductor device, wherein each of said plurality of characteristic evaluation regions includes a first region and a second region, and a test pattern for characteristic test of said semiconductor device formed in said product chip region.
Claim 21
Dependent Claim
37 words
The semiconductor wafer according to claim 17 , wherein a ratio of said data rate of said product chip region to said data rate of said TEG chip region is in a range of ¼ to 4.
Claim 22
Dependent Claim
48 words
The semiconductor wafer according to claim 17 , wherein the number of said characteristic evaluation regions is determined based on said size of said first region, said data rate of said first region, a data rate of said second region, and a size of said product chip region.
Claim 23
Dependent Claim
40 words
The semiconductor wafer according to claim 17 , wherein a size of said second region is determined based on the number of said characteristic evaluation regions, said size of said product chip region, and said size of said first region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-19 | 2005-05-21 | 2005-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-19 | 2013-05-21 | 2013-11-20 | $7700.00 | Window Closed / Lapsed |