US6313019B1
Expired / Lapsed
US
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Y-gate formation using damascene processing
Assignee: GlobalFoundries US Inc
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Filing: 2000-08-22
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Granted: 2001-11-06
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Expires: 2020-08-22
Abstract
Abstract A method for fabricating a Y-gate structure is provided. The method comprises the steps of providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer. An inwardly sloping opening is formed in the second sacrificial layer and the opening is extended vertically in the first sacrificial layer. A contact material is deposited over the second sacrificial layer filling the opening with the contact material and forming a contact layer and portions of the contact material outside a gate region are removed. The first sacrificial layer and the second sacrificial layer are then removed.
Inventors
- 👤 Ramkumar Subramanian
- 👤 Christopher F. Lyons
- 👤 Bhanwar Singh
- 👤 Marina Plat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:30
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
107 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer; forming an inwardly sloping opening in the second sacrificial layer; extending the opening vertically in the first sacrificial layer; depositing a contact material over the second sacrificial layer filling the opening with the contact material and forming a contact layer; removing portions of the contact material outside a gate region; and removing the first sacrificial layer and the second sacrificial layer.
Claim 2
Independent Claim
107 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer; forming an inwardly sloping opening in the second sacrificial layer; extending the opening vertically in the first sacrificial layer; depositing a contact material over the second sacrificial layer filling the opening with the contact material and forming a contact layer; removing portions of the contact material outside a gate region; and removing the first sacrificial layer and the second sacrificial layer.
Claim 3
Dependent Claim
65 words
The method of claim 1 , the first sacrificial layer and the second sacrificial layer including at least two of silicon oxide, silicon dioxide, silicon nitride (Si 3 N 4 ), (SiN), silicon oxynitride, (SiO x N y ), fluonated silicon oxide (SiO x F y ), and polyimide(s) wherein the first sacrificial layer is formed from a different material than the second sacrificial layer.
Claim 4
Dependent Claim
27 words
The method of claim 1 , the step of depositing a contact material comprising the step of depositing with one of polysilicon, germanium, amorphous polysilicon and metal.
Claim 5
Dependent Claim
54 words
The method of claim 1 , the step of forming an opening in the second sacrificial layer comprising providing a photoresist layer over the second sacrificial layer, etching an opening in the photoresist layer to expose the second sacrificial layer and angularly etching the exposed second sacrificial layer to form the inwardly sloping opening.
Claim 6
Dependent Claim
30 words
The method of claim 1 , the step of removing the first and second sacrificial layer comprising stripping the first and second sacrificial layers employing an anisotropic gaseous stripping process.
Claim 7
Dependent Claim
30 words
The method of claim 1 , further comprising the step of removing portions of the protection layer and the gate oxide layer not forming a part of the Y-gate structure.
Claim 8
Dependent Claim
44 words
The method of claim 6 , the step of removing portions of the protection layer and the gate oxide layer not forming a part of the Y-gate structure comprising the step of performing an etch on the protection layer and the gate oxide layer.
Claim 9
Dependent Claim
28 words
The method of claim 7 , the etch on the protection layer and the gate oxide layer being one of a wet etch and a vertical plasma etch.
Claim 10
Dependent Claim
37 words
The method of claim 1 , further comprising the step of providing a third sacrificial layer over the second sacrificial layer wherein the third sacrificial layer is comprised of a different material than the second sacrificial layer.
Claim 11
Dependent Claim
72 words
The method of claim 9 , the first sacrificial layer, the second sacrificial layer and the third sacrificial layer including at least two of silicon oxide, silicon dioxide, silicon nitride (Si 3 N 4 ), (SiN), silicon oxynitride, (SiO x N y ), fluonated silicon oxide (SiO x F y ), and polyimide(s) wherein the second sacrificial layer is formed from a different material than the first and the third sacrificial layers.
Claim 12
Dependent Claim
44 words
The method of claim 9 , further comprising the step of forming a first opening in the third sacrificial layer prior to forming the inwardly sloping opening in the second sacrificial layer wherein the inwardly sloping opening is an extension of the first opening.
Claim 13
Dependent Claim
53 words
The method of claim 11 , the step of forming the first opening in the third sacrificial layer comprising providing a photoresist layer over the third sacrificial layer, etching an opening in the photoresist layer to expose the third sacrificial and vertically etching the exposed third sacrificial layer to form the first opening.
Claim 14
Dependent Claim
17 words
The method of claim 1 , the protection layer being formed from one of polysilicon and germanium.
Claim 15
Dependent Claim
29 words
The method of claim 1 , further including the step of forming the protection layer to have a thickness within the range of about 50 Å to 150 Å.
Claim 16
Dependent Claim
53 words
The method of claim 1 , further including the step of forming the first sacrificial layer to have a thickness within the range of about 400 Å to 600 Å and the step of forming the second sacrificial layer to have a thickness within the range of about 400 Å to 600 Å.
Claim 17
Independent Claim
151 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, the protection layer being one of a polysilicon and a germanium material, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer; forming an inwardly sloping opening in the second sacrificial layer; extending the opening vertically in the first sacrificial layer; depositing a contact material over the sacrificial layer filling the opening with the contact material and forming a contact layer, the contact material being the other of a polysilicon material and a germanium material; removing portions of the contact material outside a gate region; removing the first sacrificial layer and the second sacrificial layer; and removing portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure.
Claim 18
Independent Claim
151 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, the protection layer being one of a polysilicon and a germanium material, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer; forming an inwardly sloping opening in the second sacrificial layer; extending the opening vertically in the first sacrificial layer; depositing a contact material over the sacrificial layer filling the opening with the contact material and forming a contact layer, the contact material being the other of a polysilicon material and a germanium material; removing portions of the contact material outside a gate region; removing the first sacrificial layer and the second sacrificial layer; and removing portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure.
Claim 19
Dependent Claim
37 words
The method of claim 16 , further comprising the step of providing a third sacrificial layer over the second sacrificial layer wherein the third sacrificial layer is comprised of a different material than the second sacrificial layer.
Claim 20
Dependent Claim
72 words
The method of claim 17 , the first sacrificial layer, the second sacrificial layer and the third sacrificial layer including at least two of silicon oxide, silicon dioxide, silicon nitride (Si 3 N 4 ), (SiN), silicon oxynitride, (SiO x N y ), fluonated silicon oxide (SiO x F y ), and polyimide(s) wherein the second sacrificial layer is formed from a different material than the first and the third sacrificial layers.
Claim 21
Dependent Claim
44 words
The method of claim 18 , further comprising the step of forming a first opening in the third sacrificial layer prior to forming the inwardly sloping opening in the second sacrificial layer wherein the inwardly sloping opening is an extension of the first opening.
Claim 22
Independent Claim
181 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer, a second sacrificial layer over the first sacrificial layer and a third sacrificial layer over the second sacrificial layer, the second sacrificial layer being of a different material than the first and third sacrificial layers; vertically etching a first opening in the third sacrificial layer; angularly etching the first opening to provide an inwardly sloping opening in the second sacrificial layer, the inwardly sloping opening being an extension of the first opening; vertically etching the first opening and the inwardly sloping opening to extend the opening vertically in the first sacrificial layer; depositing a contact material in the first opening; stripping the first sacrificial layer, the second sacrificial layer and the third sacrificial layer; and, etching portions of the protection layer and the gate oxide layer not forming a part of the Y-gate structure using one of a wet etch and a vertical plasma etch.
Claim 23
Independent Claim
181 words
A method for fabricating a Y-gate structure comprising the steps of: providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer, a second sacrificial layer over the first sacrificial layer and a third sacrificial layer over the second sacrificial layer, the second sacrificial layer being of a different material than the first and third sacrificial layers; vertically etching a first opening in the third sacrificial layer; angularly etching the first opening to provide an inwardly sloping opening in the second sacrificial layer, the inwardly sloping opening being an extension of the first opening; vertically etching the first opening and the inwardly sloping opening to extend the opening vertically in the first sacrificial layer; depositing a contact material in the first opening; stripping the first sacrificial layer, the second sacrificial layer and the third sacrificial layer; and, etching portions of the protection layer and the gate oxide layer not forming a part of the Y-gate structure using one of a wet etch and a vertical plasma etch.
References Cited (Backward Citations)
US4980316A
Cited
US5155053A
Cited
US5677089A
Cited
US5930610A
Cited
US5801094A
Cited
US6235626B1
Cited
US6008100A
Cited
US6184142B1
Cited
US6077733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |