US6184142B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for low k organic dielectric film etch
Assignee: United Microelectronics Corp
•
Filing: 1999-04-26
•
Granted: 2001-02-06
•
Expires: 2019-04-26
Abstract
Abstract A simplified method is disclosed for etching low k organic dielectric film. A substrate is provided with a hardmask layer and low k organic dielectric layer formed thereon in which hardmask layer is on the dielectric layer. A layer of photoresist is formed on the hardmask layer and imaged with a pattern by exposure through a dark field mask. As a key step, the pattern is transferred into the hardmask layer by dry etching and then the photoresist is stripped in-situ. Then, the interconnect is formed by using dry etching the low k organic dielectric layer using the hardmask layer as a mask, and readying it for the next semiconductor process.
Inventors
- 👤 Hsien-Ta Chung
- 👤 Chan-Lon Yang
- 👤 Tong-Yu Chen
- 👤 Tri-Rung Yew
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10P; H10P50/00; H10P50/73
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
120 words
A method for etching low k organic dielectric film, said process comprising: providing a substrate having a low k organic dielectric layer on said substrate and a hardmask layer on said low k organic dielectric layer; forming a photoresist layer on said hardmask layer; patterning said photoresist layer by exposing said photoresist layer using a dark field photo mask; etching said hardmask layer using said photoresist layer as a mask thereby transferring said pattern in said photoresist layer into said low k organic dielectric layer; in-situ removing said photoresist layer; and etching said low k organic dielectric layer using said hardmask layer as a mask thereby transferring said pattern on said hardmask layer into said low k organic dielectric layer.
Claim 2
Independent Claim
120 words
A method for etching low k organic dielectric film, said process comprising: providing a substrate having a low k organic dielectric layer on said substrate and a hardmask layer on said low k organic dielectric layer; forming a photoresist layer on said hardmask layer; patterning said photoresist layer by exposing said photoresist layer using a dark field photo mask; etching said hardmask layer using said photoresist layer as a mask thereby transferring said pattern in said photoresist layer into said low k organic dielectric layer; in-situ removing said photoresist layer; and etching said low k organic dielectric layer using said hardmask layer as a mask thereby transferring said pattern on said hardmask layer into said low k organic dielectric layer.
Claim 3
Dependent Claim
19 words
The method according to claim 1 , wherein said low k organic dielectric layer comprises an aromatic hydrocarbon material.
Claim 4
Dependent Claim
15 words
The method according to claim 1 , wherein said hardmask layer is silicon oxide layer.
Claim 5
Dependent Claim
18 words
The method according to claim 1 , wherein said photoresist layer is removed by O 2 plasma treatment.
Claim 6
Dependent Claim
22 words
The method according to claim 1 , further comprising a barrier layer between said substrate and said low k organic dielectric layer.
Claim 7
Dependent Claim
24 words
The method according to claim 1 , wherein the step of in-situ etching said hardmask and removing said photoresist is in the same etcher.
Claim 8
Independent Claim
139 words
A method for forming damascene pattern employing low k organic dielectric films as insulation layer, said method comprising: providing a substrate having a low k organic dielectric layer on said substrate and a cap layer on said low k organic dielectric layer; forming a photoresist layer on said cap layer; patterning said photoresist layer by exposing said photoresist layer using a dark field photo mask; etching said cap layer using said photoresist layer as a mask thereby transferring said pattern in said photoresist layer into said cap layer; in-situ removing said photoresist layer; etching said low k organic dielectric layer using said cap layer as a mask thereby transferring said pattern on said cap layer into said low k organic dielectric layer; depositing a metal layer; and etching back excess said metal layer by using chemical mechanical polishing method.
Claim 9
Independent Claim
139 words
A method for forming damascene pattern employing low k organic dielectric films as insulation layer, said method comprising: providing a substrate having a low k organic dielectric layer on said substrate and a cap layer on said low k organic dielectric layer; forming a photoresist layer on said cap layer; patterning said photoresist layer by exposing said photoresist layer using a dark field photo mask; etching said cap layer using said photoresist layer as a mask thereby transferring said pattern in said photoresist layer into said cap layer; in-situ removing said photoresist layer; etching said low k organic dielectric layer using said cap layer as a mask thereby transferring said pattern on said cap layer into said low k organic dielectric layer; depositing a metal layer; and etching back excess said metal layer by using chemical mechanical polishing method.
Claim 10
Dependent Claim
19 words
The method according to claim 7 , wherein said low k organic dielectric layer comprises an aromatic hydrocarbon material.
Claim 11
Dependent Claim
15 words
The method according to claim 7 , wherein said cap layer is silicon oxide layer.
Claim 12
Dependent Claim
18 words
The method according to claim 7 , wherein said photoresist layer is removed by O 2 plasma treatment.
Claim 13
Dependent Claim
22 words
The method according to claim 7 , further comprising a barrier layer between said substrate and said low k organic dielectric layer.
Claim 14
Dependent Claim
24 words
The method according to claim 7 , wherein the step of in-situ etching said hardmask and removing said photoresist is in the same etcher.
Claim 15
Independent Claim
275 words
A method for forming dual damascene pattern employing low k organic dielectric films as insulation layer, said method comprising: providing a substrate having a first low k organic dielectric layer on said substrate, a stop layer on said first low k organic dielectric layer, a second low k organic dielectric layer, and a cap layer on said second low k organic dielectric layer; forming a first photoresist layer on said cap layer; hole patterning said first photoresist layer by exposing said first photoresist layer using a dark field photo mask; etching said cap layer using said first photoresist layer as a mask thereby transferring said hole pattern in said first photoresist layer into said cap layer; in-situ removing said first photoresist layer; etching said second low k organic dielectric layer, said stop layer, and said first low k organic dielectric layer using said cap layer as a mask thereby transferring said hole pattern on said cap layer into said first and second low k organic dielectric layer; forming a second photoresist layer on said cap layer; line patterning said second photoresist layer by exposing said second photoresist layer using a dark field photo mask; etching said cap layer using said second photoresist layer as a mask thereby transferring said line pattern in said second photoresist layer into said cap layer; in-situ removing said second photoresist layer; etching said second low k organic dielectric layer using said cap layer as a mask thereby transferring said line pattern on said cap layer into said second low k organic dielectric layer; depositing a metal layer; and etching back excess said metal layer by using chemical mechanical polishing method.
Claim 16
Independent Claim
275 words
A method for forming dual damascene pattern employing low k organic dielectric films as insulation layer, said method comprising: providing a substrate having a first low k organic dielectric layer on said substrate, a stop layer on said first low k organic dielectric layer, a second low k organic dielectric layer, and a cap layer on said second low k organic dielectric layer; forming a first photoresist layer on said cap layer; hole patterning said first photoresist layer by exposing said first photoresist layer using a dark field photo mask; etching said cap layer using said first photoresist layer as a mask thereby transferring said hole pattern in said first photoresist layer into said cap layer; in-situ removing said first photoresist layer; etching said second low k organic dielectric layer, said stop layer, and said first low k organic dielectric layer using said cap layer as a mask thereby transferring said hole pattern on said cap layer into said first and second low k organic dielectric layer; forming a second photoresist layer on said cap layer; line patterning said second photoresist layer by exposing said second photoresist layer using a dark field photo mask; etching said cap layer using said second photoresist layer as a mask thereby transferring said line pattern in said second photoresist layer into said cap layer; in-situ removing said second photoresist layer; etching said second low k organic dielectric layer using said cap layer as a mask thereby transferring said line pattern on said cap layer into said second low k organic dielectric layer; depositing a metal layer; and etching back excess said metal layer by using chemical mechanical polishing method.
Claim 17
Dependent Claim
19 words
The method according to claim 13 , wherein said low k organic dielectric layer comprises an aromatic hydrocarbon material.
Claim 18
Dependent Claim
15 words
The method according to claim 13 , wherein said hardmask layer is silicon oxide layer.
Claim 19
Dependent Claim
18 words
The method according to claim 13 , wherein said photoresist layer is removed by O 2 plasma treatment.
Claim 20
Dependent Claim
22 words
The method according to claim 13 , further comprising a barrier layer between said substrate and said low k organic dielectric layer.
Claim 21
Dependent Claim
24 words
The method according to claim 13 , wherein the step of in-situ etching said hardmask and removing said photoresist is in the same etcher.
References Cited (Backward Citations)
US6037266A
Cited
US6030901A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |