Patent US3497139A successfully refreshed from Google Patents.
Patent US4125997A successfully refreshed from Google Patents.
Patent US6312581B1 successfully refreshed from Google Patents.
US6312581B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating an optical device
Assignee: Avago Technologies International Sales Pte Ltd
•
Filing: 1999-11-30
•
Granted: 2001-11-06
•
Expires: 2019-11-30
Abstract
Abstract A process for fabricating a silica-based optical device on a silicon substrate is disclosed. The device has a cladding formed in a silicon substrate. The device also has an active region, and that active region is formed on the cladding. The cladding is fabricated by forming a region of porous silicon in the silicon substrate. The porous silicon is then oxidized and densified. After densification, the active region of the device is formed on the cladding.
Inventors
- 👤 Allan James Bruce
- 👤 Alexei Glebov
- 👤 Joseph Shmulovich
- 👤 Ya-Hong Xie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:14
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/13; G02B2006/12035; G02B2006/12061
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
46 words
A method for fabricating an optical device comprising: forming a region of porous silicon in a silicon substrate by anodization; oxidizing the region of porous silicon; densifying the region of porous silicon; and forming an active portion of an optical device on the densified porous silicon.
Claim 2
Independent Claim
46 words
A method for fabricating an optical device comprising: forming a region of porous silicon in a silicon substrate by anodization; oxidizing the region of porous silicon; densifying the region of porous silicon; and forming an active portion of an optical device on the densified porous silicon.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the region of porous silicon is defined by a mask formed on the silicon substrate prior to anodization.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the density of the porous silicon is about forty-four percent.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein the region of porous silicon is oxidized by heating the substrate to a temperature of about 850° C. to about 1150° C. in an oxygen-containing atmosphere.
Claim 6
Dependent Claim
22 words
The method of claim 4 wherein the duration of the oxidizing step is sufficient to substantially completely oxidize the porous silicon region.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the oxidized porous silicon is densified using conditions that convert the oxidized porous silicon to silica.
Claim 8
Dependent Claim
19 words
The process of claim 6 wherein the porous silicon is densified by heating the substrate in an oxygen-containing atmosphere.
Claim 9
Dependent Claim
17 words
The process of claim 1 further comprising stabilizing the porous silicon region prior to the oxidizing step.
References Cited (Backward Citations)
US4016017A
Cited
US4532700A
Cited
US5391269A
Cited
US5448586A
Cited
US5907791A
Cited
JPH11194221A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-05 | 2005-05-07 | 2005-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-05 | 2009-05-07 | 2009-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-05 | 2013-05-07 | 2013-11-06 | $7700.00 | Window Closed / Lapsed |