US6291891B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device manufacturing method and semiconductor device
Assignee: Kioxia Corp
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Filing: 1999-01-12
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Granted: 2001-09-18
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Expires: 2019-01-12
Abstract
Abstract A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.
Inventors
- 👤 Kazuyuki Higashi
- 👤 Noriaki Matsunaga
- 👤 Akihiro Kajita
- 👤 Tetsuo Matsuda
- 👤 Tadashi Iijima
- 👤 Hisashi Kaneko
- 👤 Hideki Shibata
- 👤 Naofumi Nakamura
- 👤 Minakshisundaran Balasubramanian Anand
- 👤 Tadashi Matsuno
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10W20/039; H10P; H10P14/00; H10P14/40; H10P14/46; H10W20/033; H10W20/037; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693; H10W20/071; H10W20/074; H10W20/076; H10W20/077; H10W20/081; H10W20/084; H10W20/092; H10W20/40; H10W20/41; H10W20/42; H10W20/034; H10W20/0884
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
166 words
A semiconductor device comprising: a semiconductor substrate in which a first insulating layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate, and wherein a thin film which becomes a hard mask on an upper portion thereof, and formed by using the hard mask as an etching mask; a second insulating layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulating layer having at least one trench which has a trench formed by exposing at least said hard mask by selectively etching a surface of said second insulation layer, and being formed by removing said hard mask; an upper level wiring which is formed by being buried in said trench, and is electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 2
Dependent Claim
166 words
A semiconductor device comprising: a semiconductor substrate in which a first insulating layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate, and wherein a thin film which becomes a hard mask on an upper portion thereof, and formed by using the hard mask as an etching mask; a second insulating layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulating layer having at least one trench which has a trench formed by exposing at least said hard mask by selectively etching a surface of said second insulation layer, and being formed by removing said hard mask; an upper level wiring which is formed by being buried in said trench, and is electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 3
Dependent Claim
56 words
The semiconductor device according to claim 1 , said at least one trench in said second insulation film is formed by removing said protection film on a surface of said pillar-shaped structure, after a protection film is formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 4
Dependent Claim
150 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulating layer having a first trench having a same horizontal section shape as said pillar-shaped structure and a second trench which is formed on an upper portion of said first trench and has a horizontal cross-section larger than a cross-section in a horizontal section of said pillar-shaped structure; an upper level wiring formed in said first trench and said second trench and electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 5
Dependent Claim
150 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulating layer having a first trench having a same horizontal section shape as said pillar-shaped structure and a second trench which is formed on an upper portion of said first trench and has a horizontal cross-section larger than a cross-section in a horizontal section of said pillar-shaped structure; an upper level wiring formed in said first trench and said second trench and electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 6
Dependent Claim
104 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried; a conductive layer having a component, which includes a barrier metal function, formed in said lower level wiring; a conductive pillar-shaped structure connected with said conductive layer and formed on said semi-conductor substrate; a second insulation layer formed on said semi-conductor substrate to surround said pillar-shaped structure, said second insulation layer having of a trench formed to expose an upper portion of said pillar-shaped structure; and an upper level wiring formed in said trench and electrically connected with said pillar-shaped structure.
Claim 7
Dependent Claim
104 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried; a conductive layer having a component, which includes a barrier metal function, formed in said lower level wiring; a conductive pillar-shaped structure connected with said conductive layer and formed on said semi-conductor substrate; a second insulation layer formed on said semi-conductor substrate to surround said pillar-shaped structure, said second insulation layer having of a trench formed to expose an upper portion of said pillar-shaped structure; and an upper level wiring formed in said trench and electrically connected with said pillar-shaped structure.
Claim 8
Dependent Claim
17 words
The semiconductor device according to claim 4 , wherein said conductive layer has at least two layers.
Claim 9
Dependent Claim
68 words
The semiconductor device according to claim 5 , wherein said conductive layer has at least first and second layers, the first layer of said conductive layer functions as an etching stopper when said pillar-shaped structure is processed and a barrier layer, and the second layer of said conductive layer has lower resistance than the first layer and functions as an etching stopper when said pillar-shaped structure is processed.
Claim 10
Dependent Claim
14 words
The semiconductor device according to claim 4 , wherein said conductive layer includes WN.
Claim 11
Dependent Claim
14 words
The semiconductor device according to claim 5 , wherein said conductive layer includes W.
Claim 12
Dependent Claim
85 words
The semiconductor device according to claim 4 , wherein surfaces of said lower level wiring and said first insulation layer is substantially in a same plane, said conductive layer is formed so as to be connected with at least a part of said lower level wiring, and said semiconductor device further comprises a protection film coating a surface of said lower level wiring which is not covered with at least said pillar-shaped structure, and formed to deposit on an upper portion of said pillar-shaped structure.
Claim 13
Dependent Claim
26 words
The semiconductor device according to claim 4 , wherein said conductive layer is formed in said trench to cover all surfaces of said lower level wiring.
Claim 14
Dependent Claim
24 words
The semiconductor device according to claim 4 , wherein said conductive layer includes material which can be selectively etched to said first insulation film.
Claim 15
Dependent Claim
26 words
The semiconductor device according to claim 4 , wherein a horizontal section of said pillar-shaped structure is narrower than a horizontal section in said conductive layer.
Claim 16
Dependent Claim
24 words
The semiconductor device according to claim 4 , wherein said pillar-shaped structure or a conductive layer has a shape of widening toward an end.
Claim 17
Dependent Claim
31 words
The semiconductor device according to claim 4 , further comprising a protection film formed to cover a sidewall of said pillar-shaped structure, said lower level wiring, and said first insulation layer.
Claim 18
Dependent Claim
19 words
The semiconductor device according to claim 4 , wherein said lower level wiring includes copper or an alloy thereof.
Claim 19
Dependent Claim
28 words
The semiconductor device according to claim 4 , wherein said conductive layer is used as a CMP stopper when said lower level wiring is formed with the CMP.
Claim 20
Dependent Claim
19 words
The semiconductor device according to claim 16 , wherein said lower level wiring includes copper or an alloy thereof.
Claim 21
Dependent Claim
105 words
A semiconductor device comprising: a plurality of pillar-shaped structures formed in a connection region where a lower level wiring and an upper level wiring are electrically connected; a plurality of dummy pillar-shaped structures formed in a predetermined region except said connection region; and an interlevel insulation film formed to cover said plurality of pillar-shaped structures, wherein a layout data of said dummy pillar-shaped structure formed in said predetermined region is obtained by a NOR processing of data which corresponds to both information based on layout information of a layout of said lower level wiring and layout information of a layout of said upper level wiring.
Claim 22
Dependent Claim
105 words
A semiconductor device comprising: a plurality of pillar-shaped structures formed in a connection region where a lower level wiring and an upper level wiring are electrically connected; a plurality of dummy pillar-shaped structures formed in a predetermined region except said connection region; and an interlevel insulation film formed to cover said plurality of pillar-shaped structures, wherein a layout data of said dummy pillar-shaped structure formed in said predetermined region is obtained by a NOR processing of data which corresponds to both information based on layout information of a layout of said lower level wiring and layout information of a layout of said upper level wiring.
Claim 23
Dependent Claim
26 words
The semiconductor device according to claim 18 , wherein a pillar-shaped structure formed in said connection region and said predetermined region is formed with a conductor.
Claim 24
Dependent Claim
28 words
The semiconductor device according to claim 18 , wherein said dummy pillar-shaped structure formed in said predetermined region is formed in a region except a pregiven specific region.
Claim 25
Dependent Claim
93 words
A semiconductor device comprising: a plurality of pillar-shaped structures formed in a connection region where a lower level wiring and an upper level wiring are electrically connected; a plurality of dummy pillar-shaped structures formed in a predetermined region except said connection region; and an interlevel insulation film formed to cover said plurality of pillar-shaped structures, wherein a layout data of a pillar-shaped structure formed in said predetermined region is obtained by a NOT processing of data which corresponds to the information based on the layout information of a layout of said connection region.
Claim 26
Dependent Claim
93 words
A semiconductor device comprising: a plurality of pillar-shaped structures formed in a connection region where a lower level wiring and an upper level wiring are electrically connected; a plurality of dummy pillar-shaped structures formed in a predetermined region except said connection region; and an interlevel insulation film formed to cover said plurality of pillar-shaped structures, wherein a layout data of a pillar-shaped structure formed in said predetermined region is obtained by a NOT processing of data which corresponds to the information based on the layout information of a layout of said connection region.
Claim 27
Dependent Claim
26 words
The semiconductor device according to claim 21 , wherein the pillar-shaped structure formed in said connection region is removed after said interlevel insulation film is formed.
Claim 28
Dependent Claim
27 words
The semiconductor device according to claim 21 , wherein said dummy pillar-shaped structure formed in said predetermined region is formed in regions except a pregiven specific region.
Claim 29
Dependent Claim
27 words
The semiconductor device according to claim 22 , wherein said dummy pillar-shaped structure formed in said connection region and said predetermined region is formed with the insulator.
Claim 30
Dependent Claim
155 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a protection film coating a surface of said lower level wiring which is not covered with at least said pillar-shaped structure, and formed to deposit on an upper portion of said pillar-shaped structure; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulation layer having at least one trench which has a trench formed by selectively etching and exposing at least an upper portion of said protection film and formed removing a part of at least the upper portion of said protection film; and an upper level wiring which is formed by being buried in said trench, and is electrically connected with said pillar-shaped structure.
Claim 31
Dependent Claim
155 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a protection film coating a surface of said lower level wiring which is not covered with at least said pillar-shaped structure, and formed to deposit on an upper portion of said pillar-shaped structure; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, said second insulation layer having at least one trench which has a trench formed by selectively etching and exposing at least an upper portion of said protection film and formed removing a part of at least the upper portion of said protection film; and an upper level wiring which is formed by being buried in said trench, and is electrically connected with said pillar-shaped structure.
Claim 32
Dependent Claim
156 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, a third insulation layer formed on said second insulation layer having a first trench having the same horizontal section shape as said pillar-shaped structure and a second trench which is formed on an upper portion of said first trench and has a horizontal cross-section larger than a cross-section in a horizontal section of said pillar-shaped structure; an upper level wiring formed in said first trench and said second trench and electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
Claim 33
Dependent Claim
156 words
A semiconductor device comprising: a semiconductor substrate in which a first insulation layer having a trench where a lower level wiring is buried is formed; a conductive pillar-shaped structure which is connected with said lower level wiring and formed on said semiconductor substrate; a second insulation layer formed on said semiconductor substrate to surround said pillar-shaped structure, a third insulation layer formed on said second insulation layer having a first trench having the same horizontal section shape as said pillar-shaped structure and a second trench which is formed on an upper portion of said first trench and has a horizontal cross-section larger than a cross-section in a horizontal section of said pillar-shaped structure; an upper level wiring formed in said first trench and said second trench and electrically connected with said pillar-shaped structure; and a protection film formed on a surface of said lower level wiring which is not covered with at least said pillar-shaped structure.
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