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US6286454B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Plasma process device

Assignee: Sharp Corp
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Filing: 2000-05-30
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Granted: 2001-09-11
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Expires: 2020-05-30
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Abstract

Abstract A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.

Inventors

  • 👤 Masaki Hirayama
  • 👤 Tadahiro Ohmi
  • 👤 Tatsushi Yamamoto
  • 👤 Takamitsu Tadera

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 09:07
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/50; C23C16/511; H01J37/32009; H01J37/32192; H10; H10P; H10P72/00; H10P72/04; H10P72/0402

Claims Analysis

Total Claims: 31
Claim 1
Independent Claim 126 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave, said shower plate having a lower surface facing said processing chamber and an upper surface positioned on the opposite side of the lower surface; and a reaction gas supply passage positioned on the upper surface of said shower plate to supply said reaction gas to said gas inlet hole, a wall surface of said reaction gas supply passage including an upper surface of said shower plate and an electrically conductive wall surface provided opposing the upper surface.
Claim 2
Dependent Claim 126 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave, said shower plate having a lower surface facing said processing chamber and an upper surface positioned on the opposite side of the lower surface; and a reaction gas supply passage positioned on the upper surface of said shower plate to supply said reaction gas to said gas inlet hole, a wall surface of said reaction gas supply passage including an upper surface of said shower plate and an electrically conductive wall surface provided opposing the upper surface.
Claim 3
Dependent Claim 65 words
The plasma process device according to claim 1 , wherein the gas inlet hole in said shower plate is formed penetrating from the upper surface to lower surface of said shower plate, and said gas inlet hole at the lower surface of said shower plate has a diameter larger than the diameter of said gas inlet hole at the upper surface of said shower plate.
Claim 4
Dependent Claim 20 words
The plasma process device according to claim 1 , wherein said shower plate includes a plurality of shower plate portions.
Claim 5
Dependent Claim 15 words
The plasma process device according to claim 1 , wherein said shower plate includes dielectric.
Claim 6
Dependent Claim 21 words
The plasma process device according to claim 4 , wherein said dielectric is ceramic containing aluminum nitride as a main constituent.
Claim 7
Dependent Claim 20 words
The plasma process device according to claim 1 , wherein said microwave guiding means includes a single mode microwave waveguide.
Claim 8
Dependent Claim 106 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means formed on said processing chamber and having an opening to guide a microwave into said processing chamber; a shower plate positioned between said processing chamber and said microwave guiding means and having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage formed on said shower plate in a region other than a region positioned under the opening of said microwave guiding means for supplying said reaction gas to said gas inlet hole.
Claim 9
Dependent Claim 106 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means formed on said processing chamber and having an opening to guide a microwave into said processing chamber; a shower plate positioned between said processing chamber and said microwave guiding means and having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage formed on said shower plate in a region other than a region positioned under the opening of said microwave guiding means for supplying said reaction gas to said gas inlet hole.
Claim 10
Dependent Claim 63 words
The plasma process device according to claim 7 , wherein said shower plate has a lower surface facing said processing chamber and an upper surface positioned on the opposite side of the lower surface, and a wall surface of said reaction gas supply passage includes an upper surface of said shower plate and an electrically conductive wall surface positioned opposing the upper surface.
Claim 11
Dependent Claim 65 words
The plasma process device according to claim 8 , wherein the gas inlet hole in said shower plate is formed penetrating from the upper surface to lower surface of said shower plate, and said gas inlet hole at the lower surface of said shower plate has a diameter larger than the diameter of said gas inlet hole at the upper surface of said shower plate.
Claim 12
Dependent Claim 20 words
The plasma process device according to claim 7 , wherein said shower plate includes a plurality of shower plate portions.
Claim 13
Dependent Claim 15 words
The plasma process device according to claim 7 , wherein said shower plate includes dielectric.
Claim 14
Dependent Claim 21 words
The plasma process device according to claim 11 , wherein said dielectric is ceramic containing aluminum nitride as a main constituent.
Claim 15
Dependent Claim 20 words
The plasma process device according to claim 7 , wherein said microwave guiding means includes a single mode microwave waveguide.
Claim 16
Dependent Claim 93 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage positioned on said shower plate and formed in a region other than the transmission path of the microwave guided into said processing chamber by said microwave guiding means for supplying said reaction gas to said gas inlet hole.
Claim 17
Dependent Claim 93 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage positioned on said shower plate and formed in a region other than the transmission path of the microwave guided into said processing chamber by said microwave guiding means for supplying said reaction gas to said gas inlet hole.
Claim 18
Dependent Claim 63 words
The plasma process device according to claim 14 , wherein said shower plate has a lower surface facing said processing chamber and an upper surface positioned on the opposite side of the lower surface, and a wall surface of said reaction gas supply passage includes an upper surface of said shower plate and an electrically conductive wall surface provided opposing the upper surface.
Claim 19
Dependent Claim 65 words
The plasma process device according to claim 15 , wherein the gas inlet hole in said shower plate is formed penetrating from the upper surface to lower surface of said shower plate, and said gas inlet hole at the lower surface of said shower plate has a diameter larger than the diameter of said gas inlet hole at the upper surface of said shower plate.
Claim 20
Dependent Claim 20 words
The plasma process device according to claim 14 , wherein said shower plate includes a plurality of shower plate portions.
Claim 21
Dependent Claim 15 words
The plasma process device according to claim 14 , wherein said shower plate includes dielectric.
Claim 22
Dependent Claim 21 words
The plasma process device according to claim 18 , wherein said dielectric is ceramic containing aluminum nitride as a main constituent.
Claim 23
Dependent Claim 20 words
The plasma process device according to claim 14 , wherein said microwave guiding means includes a single mode microwave waveguide.
Claim 24
Dependent Claim 81 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage positioned on said shower plate and isolated from said microwave guiding means by an electrical conductor for supplying said reaction gas to said gas inlet hole.
Claim 25
Dependent Claim 81 words
A plasma process device, comprising: a processing chamber for performing a processing using plasma; microwave guiding means for guiding a microwave into said processing chamber; a shower plate having a gas inlet hole for supplying to said processing chamber a reaction gas attaining a plasma state by said microwave; and a reaction gas supply passage positioned on said shower plate and isolated from said microwave guiding means by an electrical conductor for supplying said reaction gas to said gas inlet hole.
Claim 26
Dependent Claim 62 words
The plasma process device according to claim 21 , wherein said shower plate has a lower surface facing said processing chamber and an upper surface positioned on the opposite side of the lower surface, and a wall surface of said reaction gas passage includes an upper surface of said shower plate and an electrically conductive wall surface positioned opposing the upper surface.
Claim 27
Dependent Claim 65 words
The plasma process device according to claim 22 , wherein the gas inlet hole in said shower plate is formed penetrating from the upper surface to lower surface of said shower plate, and said gas inlet hole at the lower surface of said shower plate has a diameter larger than the diameter of said gas inlet hole at the upper surface of said shower plate.
Claim 28
Dependent Claim 20 words
The plasma process device according to claim 21 , wherein said shower plate includes a plurality of shower plate portions.
Claim 29
Dependent Claim 15 words
The plasma process device according to claim 21 , wherein said shower plate includes dielectric.
Claim 30
Dependent Claim 21 words
The plasma process device according to claim 25 , wherein said dielectric is ceramic containing aluminum nitride as a main constituent.
Claim 31
Dependent Claim 20 words
The plasma process device according to claim 21 , wherein said microwave guiding means includes a single mode microwave waveguide.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-09-10 2005-03-12 2005-09-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-09-10 2009-03-12 2009-09-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-09-10 2013-03-12 2013-09-11 $7700.00 Window Closed / Lapsed

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