US6281532B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering
Assignee: Intel Corp
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Filing: 1999-06-28
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Granted: 2001-08-28
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Expires: 2019-06-28
Abstract
Abstract A method of modifying the mobility of a transistor. First, a transistor having a gate is formed. A substance is then implanted in the gate. The transistor is annealed such that the implanted substance forms at least one void in the transistor's gate.
Inventors
- 👤 Brian S. Doyle
- 👤 Brian Roberds
- 👤 Jin Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:05
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D30/791; H10D30/794; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10P30/208
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
40 words
A method of modifying the carrier mobility of a transistor, comprising: forming a transistor having a gate; implanting a substance in said gate; and, annealing said transistor such that said implanted substance forms at least one void in said gate.
Claim 2
Independent Claim
40 words
A method of modifying the carrier mobility of a transistor, comprising: forming a transistor having a gate; implanting a substance in said gate; and, annealing said transistor such that said implanted substance forms at least one void in said gate.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein implanting a substance further comprises implanting a substance in a gate wherein said substance is selected from the group consisting of the noble gases, oxygen, and any combination thereof.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein implanting a substance further comprises implanting a substance at an energy level of approximately 10 keV.
Claim 5
Dependent Claim
27 words
The method of claim 3 wherein implanting a substance further comprises implanting a substance at a dosage of approximately 10 16 to 10 17 atoms/cm 2 .
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein annealing further comprises annealing at at least 400° C. such that said implanted substance forms at least one void in said gate.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein annealing further comprises annealing for at least 30 seconds such that said implanted substance forms at least one void in said gate.
Claim 8
Dependent Claim
27 words
The method of claim 1 wherein annealing further comprises annealing at approximately 1100° C. such that said implanted substance forms at least one void in said gate.
Claim 9
Dependent Claim
28 words
The method of claim 7 wherein annealing further comprises annealing for at least 30 seconds such that said implanted substance forms at least one void in said gate.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein forming a transistor further comprises forming an NMOS transistor having a gate.
Claim 11
Dependent Claim
44 words
The method of claim 9 wherein annealing said transistor further comprises annealing said transistor such that said implanted substance forms at least one void in said gate and creates a tensile stress on said transistor such that said transistor has an increased carrier mobility.
Claim 12
Independent Claim
45 words
A method of increasing the carrier mobility of an NMOS transistor, comprising: forming an NMOS transistor having a gate; implanting a gaseous substance in said gate; and, annealing said NMOS transistor such that said implanted gaseous substance forms at least one void in said gate.
Claim 13
Independent Claim
45 words
A method of increasing the carrier mobility of an NMOS transistor, comprising: forming an NMOS transistor having a gate; implanting a gaseous substance in said gate; and, annealing said NMOS transistor such that said implanted gaseous substance forms at least one void in said gate.
Claim 14
Dependent Claim
38 words
The method of claim 11 wherein implanting a gaseous substance further comprises implanting a gaseous substance in a gate wherein said gaseous substance is selected from the group consisting of the noble gases, oxygen, and any combination thereof.
Claim 15
Dependent Claim
24 words
The method of claim 11 wherein implanting a gaseous substance further comprises implanting a gaseous substance at an energy level of approximately 10 keV.
Claim 16
Dependent Claim
29 words
The method of claim 13 wherein implanting a gaseous substance further comprises implanting a gaseous substance at a dosage of approximately 10 16 to 10 17 atoms/cm 2 .
Claim 17
Dependent Claim
29 words
The method of claim 11 wherein annealing further comprises annealing at at least 500° C. such that said implanted gaseous substance forms at least one void in said gate.
Claim 18
Dependent Claim
29 words
The method of claim 15 wherein annealing further comprises annealing for at least 30 seconds such that said implanted gaseous substance forms at least one void in said gate.
Claim 19
Dependent Claim
28 words
The method of claim 11 wherein annealing further comprises annealing at approximately 1100° C. such that said implanted gaseous substance forms at least one void in said gate.
Claim 20
Dependent Claim
29 words
The method of claim 17 wherein annealing further comprises annealing for at least 30 seconds such that said implanted gaseous substance forms at least one void in said gate.
Claim 21
Independent Claim
40 words
An apparatus comprising: an NMOS transistor, said transistor having a gate; and, at least one annealed void in said gate wherein said void creates a tensile stress region in said NMOS transistor such that NMOS transistor has an increased mobility.
Claim 22
Independent Claim
40 words
An apparatus comprising: an NMOS transistor, said transistor having a gate; and, at least one annealed void in said gate wherein said void creates a tensile stress region in said NMOS transistor such that NMOS transistor has an increased mobility.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-27 | 2005-02-26 | 2005-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-27 | 2009-02-26 | 2009-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-27 | 2013-02-26 | 2013-08-28 | $7700.00 | Window Closed / Lapsed |