Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent Si from being sucked to Al, to prevent the Al from diffusing in an eutectic alloy of a high melting point metal and semiconductor and to obtain a semiconductor device which obtains stable contact characteristics by incorporating boron ions in the alloy. CONSTITUTION:After a mask is so formed on other part as to ion implant only to a gate electrode 15, boron ions are implanted to a tungsten silicide layer 2 with dose of 5X10<15>-1X10<16>cm<-2>. Then, an Al-Si layer is formed by sputtering, and the layer is etched at a predetermined position thereby to form a gate wiring 16, a source wiring and a drain wiring. Thus, the ohmic contact of the gate electrode 15 and the gate wiring 16 is formed, thereby preventing the Al and the Si from mutually diffusing each other.

Inventors

• 👤 Toshiya Hashiguchi
• 👤 俊哉 橋口
• 👤 Hidenori Kenmotsu
• 👤 秀憲 監物
• 👤 Yutaka Okamoto
• 👤 裕 岡本

Bibliographic Details