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US6274518B1
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Method for producing a group III nitride compound semiconductor substrate
Assignee: Panasonic Holdings Corp
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Filing: 2000-04-10
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Granted: 2001-08-14
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Expires: 2020-04-10
Abstract
Abstract The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
Inventors
- 👤 Masaaki Yuri
- 👤 Osamu Imafuji
- 👤 Shinji Nakamura
- 👤 Masahiro Ishida
- 👤 Kenji Orita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10F; H10F71/00; H10F71/127; H10F71/1276; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/36; H10P14/3602; H10P14/38; H10P14/27; H10P14/271; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
91 words
A method for producing a group III nitride compound semiconductor substrate, comprising: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film.
Claim 2
Independent Claim
91 words
A method for producing a group III nitride compound semiconductor substrate, comprising: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film.
Claim 3
Dependent Claim
57 words
The method for producing a group III nitride compound semiconductor substrate according to claim 1 , wherein the process (a) comprises: (a-1) forming a film made of the first group III nitride compound semiconductor on the substrate; and (a-2) removing a part of the film, thereby forming a first semiconductor film provided with a plurality of grooves.
Claim 4
Dependent Claim
31 words
The method for producing a group III nitride compound semiconductor substrate according to claim 2 , wherein in the process (a-2), the plurality of grooves are formed in a stripe geometry.
Claim 5
Dependent Claim
37 words
The method for producing a group III nitride compound semiconductor substrate according to claim 3 , wherein the substrate is a (0001) plane sapphire substrate, and the grooves are formed in a [11 {overscore (2)} 0] direction.
Claim 6
Dependent Claim
64 words
The method for producing a group III nitride compound semiconductor substrate according to claim 1 , wherein the process (a) comprises: (a-1) forming a film made of the first group III nitride compound semiconductor and an insulating film in this order on the substrate; and (a-2) removing a part of the film, thereby forming a first semiconductor film provided with a plurality of grooves.
Claim 7
Dependent Claim
31 words
The method for producing a group III nitride compound semiconductor substrate according to claim 5 , wherein in the process (a-2), the plurality of grooves are formed in a stripe geometry.
Claim 8
Dependent Claim
37 words
The method for producing a group III nitride compound semiconductor substrate according to claim 6 , wherein the substrate is a (0001) plane sapphire substrate, and the grooves are formed in a [11 {overscore (2)} 0] direction.
Claim 9
Dependent Claim
40 words
The method for producing a group III nitride compound semiconductor substrate according to claim 5 , wherein the insulating film is made of at least one selected from the group consisting of SiO 2 and Si 3 N 4 .
Claim 10
Dependent Claim
32 words
The method for producing a group III nitride compound semiconductor substrate according to claim 5 , further comprising removing the insulating film selectively after the process (b) and before the process (c).
Claim 11
Dependent Claim
40 words
The method for producing a group III nitride compound semiconductor substrate according to claim 1 , wherein a lattice constant of the first group III nitride compound semiconductor is smaller than that of the second group III nitride compound semiconductor.
Claim 12
Dependent Claim
42 words
The method for producing a group III nitride compound semiconductor substrate according to claim 1 , wherein the first group III nitride compound semiconductor is Al X Ga 1−X N (where 0<X≦1), and the second group III nitride compound semiconductor is GaN.
Claim 13
Dependent Claim
31 words
The method for producing a group III nitride compound semiconductor substrate according to claim 1 , wherein the process (c) further includes heating and cooling the substrate after cooling the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-13 | 2005-02-12 | 2005-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-13 | 2009-02-12 | 2009-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-13 | 2013-02-12 | 2013-08-14 | $7700.00 | Window Closed / Lapsed |