Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
In a method for depositing a first layer[10, 30] on a second layer[10, 32] wherein
said first and second layers have different thermal indices of expansion and/or lattice
constants, the improvement comprising the step of decomposing a portion[11] of one of said
first and second layers after said first layer[10, 30] has been deposited on said second
layer[10, 32], said decomposed portion[11] comprising a portion of said one of said first and
second layers at the interface of said first and second layers.
Claim 2
Dependent Claim
43 words
The method of Claim 1 wherein said step of decomposing a portion of one of said
first and second layers comprises etching holes[32] in said second layer[12,32] from the side
of said second layer[12,32] that is not in contact with said first layer[10,30].
Claim 3
Dependent Claim
166 words
The method of Claim 1 or 2 wherein said one of said first and second layers that is
decomposed is said first layer[10, 30], said first layer[10, 30] comprising a material that
decomposes upon heating above a decomposition temperature, wherein one of said first and
second layers absorbs light in a first frequency range and the other of said first and second
layers is transparent to said light in said first frequency range, and wherein said step of
decomposing said portion of said one of said first and second layers comprises the step of
exposing said one of said first and second layers that absorbs light in said first frequency
range to light[14] in said first frequency range by passing said light through the other of said
first and second layers thereby heating said first layer[10, 30] to a temperature above said
decomposition temperature at the interface of said first and second layers after said first
layer[10, 30] has been deposited on said second layer[10, 32].
Claim 4
Dependent Claim
14 words
The method of Claim 3 wherein said first layer[10, 30] comprises a III-V
semiconductor.
Claim 5
Dependent Claim
11 words
The method of Claim 4 wherein said III-V semiconductor comprises GaN.
Claim 6
Dependent Claim
27 words
The method of Claim 4 or 5 wherein said second layer (10, 32) comprises a material
chosen from the group consisting of sapphire, silicon, GaAs and InP.
Claim 7
Independent Claim
34 words
The method of one of Claims 3 to 6 wherein a portion of said first layer (10, 30) is not heated
above said decomposition temperature at said interface between said first and second layers.
Claim 8
Independent Claim
54 words
The method of one of Claims 3 to 7 wherein said first layer (10, 30) is deposited at a
temperature above ambient and wherein said first layer[10, 30] is heated to said temperature
above said decomposition temperature before said first layer[10, 30] is returned to ambient
after said first layer[10, 30] has been deposited.
Claim 9
Independent Claim
68 words
The method of one of Claims 3 to 8 wherein said first layer (10, 30) comprises a decomposition
layer in contact with said substrate and a third layer, said second and third layers sandwiching
said decomposition layer, said decomposition layer decomposing at a temperature less than
the temperature at which said second and third layers decompose but greater than said
temperature at which said deposition is carried out.