EP0328405A2
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EP
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Semiconductor structure and method of manufacture
Assignee: Verizon Laboratories Inc
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Filing: 1989-02-10
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Granted: —
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Expires: 2009-02-10
Abstract
Abstract Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate (10) of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers (11) due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.
Inventors
- 👤 Ben G. Yacobi
- 👤 Stanley Zemon
- 👤 Chirravuri Jagannath
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 11:15
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1276; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2909; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
79 words
A semiconductor structure comprising a substrate of essentially single crystal insulating or semiconducting material; and an epitaxial layer of single crystal semiconductor material on a surface of the substrate, said semiconductor material having a different coefficient of thermal expansion from that of the substrate material; said epitaxial layer consisting of a plurality of individual islands of single crystal semiconductor material spaced from each other and having sufficiently small dimensions that no significant stress is present in the crystal structure.
Claim 2
Dependent Claim
79 words
A semiconductor structure comprising a substrate of essentially single crystal insulating or semiconducting material; and an epitaxial layer of single crystal semiconductor material on a surface of the substrate, said semiconductor material having a different coefficient of thermal expansion from that of the substrate material; said epitaxial layer consisting of a plurality of individual islands of single crystal semiconductor material spaced from each other and having sufficiently small dimensions that no significant stress is present in the crystal structure.
Claim 3
Dependent Claim
102 words
A semiconductor structure in accordance with claim 1 wherein said surface of the substrate is a flat, planar surface; said individual islands of semiconductor material each have a flat, planar upper surface; and the flat, planar upper surfaces of said islands lie in a common plane substantially parallel to said surface of the substrate; each of said islands has edge surfaces extending from the upper surface to the surface of the substrate; and the maximum dimension of each island between edge surfaces in the plane of the upper surface is sufficiently small that no significant stress is present in the crystal structure.
Claim 4
Dependent Claim
25 words
A semiconductor structure in accordance with claim 2 wherein the maximum distance between edge surfaces of each island is no greater than about 10 micrometers.
Claim 5
Dependent Claim
22 words
A semiconductor structure in accordance with claim 3 wherein each of said islands is between about 2 to about 5 micrometers thick.
Claim 6
Dependent Claim
25 words
A semiconductor structure in accordance with claim 4 wherein the material of said substrate is InP; and the semiconductor material of said islands includes GaAs.
Claim 7
Dependent Claim
23 words
A semiconductor structure in accordance with claim 4 wherein each of said islands contains the elements of a semiconductor electronic or opto-electronic device.
Claim 8
Independent Claim
77 words
The method of fabricating a semiconductor structure comprising providing a substrate of essentially single crystal insulating or semiconducting material; and forming on a surface of said substrate an epitaxial layer consisting of a plurality of individual islands of single crystal semiconductor material having a different coefficient of thermal expansion from that of the substrate material, said islands being spaced from each other and having sufficiently small dimensions that no significant stress is present in the crystal structure.
Claim 9
Independent Claim
77 words
The method of fabricating a semiconductor structure comprising providing a substrate of essentially single crystal insulating or semiconducting material; and forming on a surface of said substrate an epitaxial layer consisting of a plurality of individual islands of single crystal semiconductor material having a different coefficient of thermal expansion from that of the substrate material, said islands being spaced from each other and having sufficiently small dimensions that no significant stress is present in the crystal structure.
Claim 10
Dependent Claim
84 words
The method in accordance with claim 7 wherein said surface of the substrate is a flat, planar surface; forming an epitaxial layer of semiconductor material includes growing a layer having a flat, planar upper surface substantially parallel to said surface of the substrate; each of said islands has edge surfaces extending from the upper surface to the surface of the substrate; and the maximum dimension of each island between edge surfaces is sufficiently small that no significant stress is present in the crystal structure.
Claim 11
Dependent Claim
24 words
The method in accordance with claim 8 wherein the maximum distance between edge surfaces of each island is no greater than about 10 micrometers.
Claim 12
Dependent Claim
21 words
The method in accordance with claim 9 wherein each of said islands is between about 2 to about 5 micrometers thick.
References Cited (Backward Citations)
No citation records indexed.
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