Process for production of SOI substrate and process for production of semiconductor device

Claim 2

A process for producing an SOI substrate comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal silicon substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.

Claim 3

A process for producing an SOI substrate according to claim 1 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.

Claim 4

A process for producing an SOI substrate according to claim 1 , wherein said supporting substrate is selected from a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.

Claim 5

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.

Claim 6

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.

Claim 7

A process for producing a semiconductor device according to claim 4 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.

Claim 8

A process for producing a semiconductor device according to claim 4 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.

Claim 9

A process for producing a semiconductor device according to claim 4 , wherein said supporting substrate is selected from a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.

Claim 10

A process for producing a semiconductor device according to claim 4 , wherein said semiconductor device is an electroluminescence display unit.

Claim 11

A process for producing a semiconductor device according to claim 4 , wherein said semiconductor device is an integrated circuit.

Claim 12

A process for producing a semiconductor device according to claim 4 , wherein said semiconductor device is a liquid crystal display unit.

Claim 13

A process for producing a semiconductor device according to claim 4 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.

Claim 14

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.

Claim 15

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.

Claim 16

A process for producing a semiconductor device according to claim 12 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.

Claim 17

A process for producing a semiconductor device according to claim 12 , wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.

Claim 18

A process for producing a semiconductor device according to claim 12 , wherein said supporting substrate is selected from a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.

Claim 19

A process for producing a semiconductor device according to claim 12 , wherein said semiconductor device is an electroluminescence display unit.

Claim 20

A process for producing a semiconductor device according to claim 12 , wherein said semiconductor device is an integrated circuit.

Claim 21

A process for producing a semiconductor device according to claim 12 , wherein said semiconductor device is a liquid crystal display unit.

Claim 22

A process for producing a semiconductor device according to claim 12 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.

Claim 23

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region, a lightly doped drain region and a channel region; forming an interlayer insulating film to cover said gate electrode and said island-like semiconductor layer; forming a source wiring and a drain wiring in contact with said source region and said drain region, respectively.

Claim 24

A process for producing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region, a lightly doped drain region and a channel region; forming an interlayer insulating film to cover said gate electrode and said island-like semiconductor layer; forming a source wiring and a drain wiring in contact with said source region and said drain region, respectively.

Claim 25

A process for producing a semiconductor device according to claim 20 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.

Claim 26

A process for producing a semiconductor device according to claim 20 , wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.

Claim 27

A process for producing a semiconductor device according to claim 20 , wherein said supporting substrate is selected from a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.

Claim 28

A process for producing a semiconductor device according to claim 20 , wherein said semiconductor device is an electroluminescence display unit.

Claim 29

A process for producing a semiconductor device according to claim 20 , wherein said semiconductor device is an integrated circuit.

Claim 30

A process for producing a semiconductor device according to claim 20 , wherein said semiconductor device is a liquid crystal display unit.

Claim 31

A process for producing a semiconductor device according to claim 20 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.

Claim 32

A process for producing a semiconductor device comprising the steps of: forming a mask on one surface of a single-crystal semiconductor substrate; converting a portion of said one surface into at least one porous layer by using an anodizing treatment, wherein said mask is not formed on said portion; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.

Claim 33

A process for producing a semiconductor device comprising the steps of: forming a mask on one surface of a single-crystal semiconductor substrate; converting a portion of said one surface into at least one porous layer by using an anodizing treatment, wherein said mask is not formed on said portion; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.

Claim 34

A process for producing a semiconductor device according to claim 28 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.

Claim 35

A process for producing a semiconductor device according to claim 28 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.

Claim 36

A process for producing a semiconductor device according to claim 28 , wherein said supporting substrate is selected from a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.

Claim 37

A process for producing a semiconductor device according to claim 28 , wherein said semiconductor device is an electroluminescence display unit.

Claim 38

A process for producing a semiconductor device according to claim 28 , wherein said semiconductor device is an integrated circuit.

Claim 39

A process for producing a semiconductor device according to claim 28 , wherein said semiconductor device is a liquid crystal display unit.

Claim 40

A process for producing a semiconductor device according to claim 28 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recoding medium, a goggle type display, a front type projector and a rear type projector.