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US6258637B1
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Method for thin film deposition on single-crystal semiconductor substrates
Assignee: Texas Instruments Inc
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Filing: 1999-12-02
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Granted: 2001-07-10
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Expires: 2019-12-02
Abstract
Abstract A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate, and thermally annealing the substrate in a vacuum while supplying a silicon-containing flux to the oxide surface, thus removing the oxidized silicon layer. Preferably, the thin film is formed immediately after removal of the oxidized silicon layer. The silicon-containing flux is preferably insufficient to deposit a silicon-containing layer on top of the oxidized silicon layer, and yet sufficient to substantially inhibit an SiO-forming reaction between the silicon substrate and the oxidized silicon layer. The method of the invention allows for growth or deposition of films which have exceptionally smooth interfaces (less than 0.1 nm rms roughness) with the underlying silicon substrate at temperatures less than 800° C., and is ideally suited for deposition of ultrathin films having thicknesses less than about 5 nm.
Inventors
- 👤 Glen D. Wilk
- 👤 Yi Wei
- 👤 Robert M. Wallace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:51
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6512; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P70/12; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
109 words
A method of forming a non-epitaxial thin film on a single-crystal silicon substrate, said method comprising the steps of: forming a first oxidized silicon layer on a first region of said substrate; placing said substrate in a vacuum; providing a silicon-containing flux to said substrate, said flux being insufficient to deposit a silicon-containing layer on said first oxidized silicon layer but sufficient to substantially inhibit an SiO-forming reaction between said silicon substrate and said first oxidized silicon layer; continuing said flux until said first oxidized silicon layer is removed from said first region of said substrate; and forming said non-epitaxial thin film on said first region of said substrate.
Claim 2
Independent Claim
109 words
A method of forming a non-epitaxial thin film on a single-crystal silicon substrate, said method comprising the steps of: forming a first oxidized silicon layer on a first region of said substrate; placing said substrate in a vacuum; providing a silicon-containing flux to said substrate, said flux being insufficient to deposit a silicon-containing layer on said first oxidized silicon layer but sufficient to substantially inhibit an SiO-forming reaction between said silicon substrate and said first oxidized silicon layer; continuing said flux until said first oxidized silicon layer is removed from said first region of said substrate; and forming said non-epitaxial thin film on said first region of said substrate.
Claim 3
Dependent Claim
19 words
The method of claim 1 , wherein said single-crystal substrate is oriented substantially in the ( 100 ) plane.
Claim 4
Dependent Claim
17 words
The method of claim 1 , wherein said first oxidized silicon layer is a native oxide layer.
Claim 5
Dependent Claim
31 words
The method of claim 1 , wherein said vacuum is maintained in a range of about 10 −10 torr to about 10 −8 torr during said providing a silicon-containing flux step.
Claim 6
Dependent Claim
21 words
The method of claim 1 , wherein said silicon-containing flux is provided to said substrate by a physical vapor deposition method.
Claim 7
Dependent Claim
22 words
The method of claim 5 , wherein said physical vapor deposition method is selected from the group consisting of sputtering and evaporation.
Claim 8
Dependent Claim
21 words
The method of claim 1 , wherein said silicon-containing flux is provided to said substrate by a chemical vapor deposition method.
Claim 9
Dependent Claim
26 words
The method of claim 7 , wherein said silicon-containing flux is selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, and combinations thereof.
Claim 10
Dependent Claim
23 words
The method of claim 1 , wherein said depositing said non-epitaxial film step is performed without first returning said substrate to atmospheric pressure.
Claim 11
Independent Claim
86 words
A method of preparing an atomically-stepped surface on a single-crystal silicon substrate having an oxidized silicon layer on a region thereon comprising the steps of: placing said substrate in a vacuum; providing a silicon-containing flux to said substrate, said flux being insufficient to deposit a silicon-containing layer on said oxidized silicon layer but sufficient to substantially inhibit an SiO-forming reaction between said silicon substrate and said oxidized silicon layer; and continuing said flux until said oxidized silicon layer is removed from said region of said substrate.
Claim 12
Independent Claim
86 words
A method of preparing an atomically-stepped surface on a single-crystal silicon substrate having an oxidized silicon layer on a region thereon comprising the steps of: placing said substrate in a vacuum; providing a silicon-containing flux to said substrate, said flux being insufficient to deposit a silicon-containing layer on said oxidized silicon layer but sufficient to substantially inhibit an SiO-forming reaction between said silicon substrate and said oxidized silicon layer; and continuing said flux until said oxidized silicon layer is removed from said region of said substrate.
Claim 13
Dependent Claim
30 words
The method of claim 10 , wherein said flux is supplied while maintaining said substrate at pressure and temperature conditions according to the SiO Formation region of FIG. 7 .
Claim 14
Dependent Claim
27 words
The method of claim 1 , wherein said flux is supplied while maintaining the substrate in a temperature range of about 680° C. to about 780° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-09 | 2005-01-08 | 2005-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-09 | 2009-01-08 | 2009-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-09 | 2013-01-08 | 2013-07-10 | $7700.00 | Window Closed / Lapsed |