US6249055B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-encapsulated copper metallization
Assignee: GlobalFoundries Inc
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Filing: 1998-02-03
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Granted: 2001-06-19
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Expires: 2018-02-03
Abstract
Abstract Copper or copper alloy interconnection patterns are formed by a damascene technique. An aluminum or magnesium alloy is deposited in a damascene opening formed in a dielectric layer. Copper or a copper alloy is then electroplated or electroless plated on the aluminum or magnesium alloy, filling the opening. During low temperature annealing, aluminum or magnesium atoms diffuse through the copper or copper alloy layer and accumulate on its surface forming a self-encapsulated oxide to prevent corrosion and diffusion of copper atoms.
Inventors
- 👤 Valery Dubin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/042; H10W20/043; H10W20/044; H10W20/056; H10W20/064; H10W20/065; H10W20/076; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
107 words
A semiconductor device having an interconnection pattern comprising: a dielectric layer having an opening therein; and a composite metal layer inlaid in the opening, the composite metal layer comprising: a metal layer comprising a magnesium alloy lining the entire opening; a plated layer, comprising an upper surface, comprising electroplated or electroless plated copper or a copper alloy on the metal layer filling the opening; and a layer of magnesium oxide, formed: (a) directly on the upper surface of and encapsulating the plated layer; and (b) directly on the entire surface of the metal layer lining the opening which is between the metal layer and the dielectric layer.
Claim 2
Dependent Claim
107 words
A semiconductor device having an interconnection pattern comprising: a dielectric layer having an opening therein; and a composite metal layer inlaid in the opening, the composite metal layer comprising: a metal layer comprising a magnesium alloy lining the entire opening; a plated layer, comprising an upper surface, comprising electroplated or electroless plated copper or a copper alloy on the metal layer filling the opening; and a layer of magnesium oxide, formed: (a) directly on the upper surface of and encapsulating the plated layer; and (b) directly on the entire surface of the metal layer lining the opening which is between the metal layer and the dielectric layer.
Claim 3
Dependent Claim
24 words
The semiconductor device according to claim 1 , wherein the metal layer comprises an alloy containing about 0.1 to about 90 atomic percent Mg.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-18 | 2004-12-18 | 2005-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-18 | 2008-12-18 | 2009-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-18 | 2012-12-18 | 2013-06-19 | $7700.00 | Window Closed / Lapsed |