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US6248459B1
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Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
Assignee: Apple Inc
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Filing: 1999-03-22
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Granted: 2001-06-19
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Expires: 2019-03-22
Abstract
Abstract A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface is an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
Inventors
- 👤 Jun Wang
- 👤 William Jay Ooms
- 👤 Jerald Allen Hallmark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:43
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/30; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
63 words
A semiconductor structure comprising: a silicon substrate; one or more layers of single crystal oxides; and an interface between the silicon substrate and the one or more layers of single crystal oxides, the interface having a 2×1 reconstruction and comprising an atomic layer of a crystalline material which matches the lattice constant of silicon, the crystalline material comprising silicon, oxygen, and a metal.
Claim 2
Dependent Claim
63 words
A semiconductor structure comprising: a silicon substrate; one or more layers of single crystal oxides; and an interface between the silicon substrate and the one or more layers of single crystal oxides, the interface having a 2×1 reconstruction and comprising an atomic layer of a crystalline material which matches the lattice constant of silicon, the crystalline material comprising silicon, oxygen, and a metal.
Claim 3
Dependent Claim
72 words
The semiconductor structure of claim 1 wherein the one or more layers of single crystal oxides comprises an oxide layer formed adjacent the interface, the oxide layer having a first oxygen atom adjacent and substantially aligned in the < 001 > direction with a metal atom in the interface, and having a second oxygen atom adjacent and substantially aligned in the < 001 > direction with a silicon atom in the interface.
Claim 4
Dependent Claim
12 words
The semiconductor structure of claim 1 wherein the metal is an alkaline-earth-metal.
Claim 5
Dependent Claim
18 words
The semiconductor structure of claim 3 wherein the alkaline-earth-metal is selected from the group of barium and strontium.
Claim 6
Dependent Claim
34 words
The semiconductor structure of claim 1 wherein the atomic layer of the interface comprises: a half of a monolayer of an alkaline-earth-metal; a half of a monolayer of silicon; and a monolayer of oxygen.
Claim 7
Dependent Claim
44 words
The semiconductor structure of claim 5 wherein the silicon substrate includes a layer of silicon atoms adjacent to the interface, each atom of the alkaline-earth-metal in the atomic layer of the interface being substantially equally spaced from four silicon atoms in the silicon substrate.
Claim 8
Dependent Claim
42 words
The semiconductor structure of claim 6 wherein the interface comprises rows of atoms in a 2×1 configuration on a ( 001 ) surface of the silicon substrate, 1× in the < 110 > direction and 2× in the < 110 > direction.
Claim 9
Dependent Claim
31 words
The semiconductor structure of claim 7 wherein the silicon atoms in the interface are substantially on a line and equally spaced between the alkaline-earth-metal atoms in the < 110 > direction.
Claim 10
Dependent Claim
48 words
The semiconductor structure of claim 1 wherein each silicon atom in the layer of atoms in the silicon substrate adjacent to the interface is bonded to an oxygen atom in the interface and each silicon atom in the interface is bonded to two oxygen atoms in the interface.
Claim 11
Dependent Claim
33 words
The semiconductor structure of claim 1 wherein the atomic layer of the interface comprises a two dimensional periodic array including metal atoms M, silicon atoms Si, and oxygen atoms O of the form:
Claim 12
Dependent Claim
49 words
The semiconductor structure of claim 1 wherein the interface and the atomic layer of the silicon substrate adjacent the interface comprises a two dimensional periodic array including metal atoms M, silicon atoms Si, and oxygen atoms O in the interface; and Si′ atoms in the substrate; of the form:
Claim 13
Dependent Claim
36 words
A semiconductor structure comprising: a silicon substrate having a surface; a material; and a layer comprising XSiO 2 forming an interface between the surface of the silicon substrate and the material, where X is a metal.
Claim 14
Dependent Claim
36 words
A semiconductor structure comprising: a silicon substrate having a surface; a material; and a layer comprising XSiO 2 forming an interface between the surface of the silicon substrate and the material, where X is a metal.
Claim 15
Dependent Claim
14 words
The semiconductor structure of claim 12 wherein the layer is a single atomic layer.
Claim 16
Dependent Claim
12 words
The semiconductor structure of claim 12 wherein the metal comprises an alkaline-earth-metal.
Claim 17
Dependent Claim
18 words
The semiconductor structure of claim 14 wherein the alkaline-earth-metal is selected from the group of barium and strontium.
Claim 18
Dependent Claim
63 words
The semiconductor structure of claim 12 wherein the material comprises an oxide layer formed adjacent the interface, the oxide layer having an oxygen atom adjacent and substantially aligned in the < 001 > direction with a metal atom in the interface, and having another oxygen atom adjacent and substantially aligned in the < 001 > direction with a silicon atom in the interface.
Claim 19
Dependent Claim
30 words
The semiconductor structure of claim 12 wherein the layer comprises: a half of a monolayer of an alkaline-earth-metal; a half of a monolayer of silicon; and a monolayer of oxygen.
Claim 20
Dependent Claim
45 words
The semiconductor structure of claim 17 wherein the silicon substrate includes a layer of silicon atoms adjacent to the interface, each atom of the alkaline-earth-metal in the atomic layer adjacent to the substrate being substantially equally spaced from four silicon atoms in the silicon substrate.
Claim 21
Dependent Claim
42 words
The semiconductor structure of claim 18 wherein the interface comprises rows of atoms in a 2×1 configuration on a ( 001 ) surface of the silicon substrate, 1× in the < 110 > direction and 2× in the < 110 > direction.
Claim 22
Dependent Claim
31 words
The semiconductor structure of claim 19 wherein the silicon atoms in the interface are substantially on a line and equally spaced between the alkaline-earth-metal atoms in the < 110 > direction.
Claim 23
Dependent Claim
48 words
The semiconductor structure of claim 12 wherein each silicon atom in the layer of atoms in the silicon substrate adjacent to the interface is bonded to an oxygen atom in the interface and each silicon atom in the interface is bonded to two oxygen atoms in the interface.
Claim 24
Dependent Claim
13 words
The semiconductor structure of claim 12 wherein the interface has a 2×1 reconstruction.
Claim 25
Dependent Claim
29 words
The semiconductor structure of claim 12 wherein the interface comprises a two dimensional periodic array including metal atoms M, silicon atoms Si, and oxygen atoms O of the form:
Claim 26
Dependent Claim
53 words
The semiconductor structure of claim 12 wherein the atomic layer of the interface and the atomic layer of the silicon substrate adjacent the interface comprises a two dimensional periodic array including metal atoms M, silicon atoms Si, and oxygen atoms O in the interface; and Si′ atoms in the substrate; of the form:
Claim 27
Dependent Claim
77 words
A semiconductor structure comprising: a silicon substrate having a surface; one or more successively adjacent layers of single crystal oxides; and an interface between the surface of the silicon substrate and one of the one or more successively adjacent layers of single crystal oxides, comprising a single atomic layer of XSiO 2 , where X is a metal and is lattice matched with the one of the one or more successively adjacent layers of single crystal oxides.
Claim 28
Dependent Claim
77 words
A semiconductor structure comprising: a silicon substrate having a surface; one or more successively adjacent layers of single crystal oxides; and an interface between the surface of the silicon substrate and one of the one or more successively adjacent layers of single crystal oxides, comprising a single atomic layer of XSiO 2 , where X is a metal and is lattice matched with the one of the one or more successively adjacent layers of single crystal oxides.
Claim 29
Dependent Claim
12 words
The semiconductor structure of claim 25 wherein the metal comprises an alkaline-earth-metal.
Claim 30
Dependent Claim
18 words
The semiconductor structure of claim 26 wherein the alkaline-earth-metal is selected from the group of barium and strontium.
Claim 31
Dependent Claim
72 words
The semiconductor structure of claim 25 wherein the one or more successively adjacent layers of single crystal oxides comprises an oxide layer formed adjacent the interface, the oxide layer having an oxygen atom adjacent and substantially aligned in the < 001 > direction with a metal atom in the interface, and having an oxygen atom adjacent and substantially aligned in the < 001 > direction with a silicon atom in the interface.
Claim 32
Dependent Claim
35 words
The semiconductor structure of claim 25 wherein the single atomic layer of the interface comprises: a half of a monolayer of an alkaline-earth-metal; a half of a monolayer of silicon; and a monolayer of oxygen.
Claim 33
Dependent Claim
44 words
The semiconductor structure of claim 29 wherein the silicon substrate includes a layer of silicon atoms adjacent to the interface, each atom of the alkaline-earth-metal in the atomic layer of the interface being substantially equally spaced from four silicon atoms in the silicon substrate.
Claim 34
Dependent Claim
42 words
The semiconductor structure of claim 30 wherein the interface comprises rows of atoms in a 2×1 configuration on a ( 001 ) surface of the silicon substrate, 1× in the < 110 > direction and 2× in the < 110 > direction.
Claim 35
Dependent Claim
31 words
The semiconductor structure of claim 31 wherein the silicon atoms in the interface are substantially on a line and equally spaced between the alkaline-earth-metal atoms in the < 110 > direction.
Claim 36
Dependent Claim
48 words
The semiconductor structure of claim 25 wherein each silicon atom in the layer of atoms in the silicon substrate adjacent to the interface is bonded to an oxygen atom in the interface and each silicon atom in the interface is bonded to two oxygen atoms in the interface.
Claim 37
Dependent Claim
13 words
The semiconductor structure of claim 25 wherein the interface has a 2×1 reconstruction.
Claim 38
Dependent Claim
31 words
The semiconductor structure of claim 25 wherein the single atomic layer of the interface comprises the structure including metal atoms M, silicon atoms Si, and oxygen atoms O of the form:
Claim 39
Dependent Claim
51 words
The semiconductor structure of claim 25 wherein the atomic layer of the interface and the single atomic layer of the silicon substrate adjacent the interface comprises the structure including metal atoms M, silicon atoms Si, and oxygen atoms O in the interface; and Si′ atoms in the substrate; of the form:
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-18 | 2004-12-18 | 2005-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-18 | 2008-12-18 | 2009-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-18 | 2012-12-18 | 2013-06-19 | $7700.00 | Window Closed / Lapsed |