Patent US6204715B1 successfully refreshed from Google Patents.
← Back to Patent Explorer
US6204715B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Signal amplifying circuit

Assignee: Motors Liquidation Co
•
Filing: 1999-02-26
•
Granted: 2001-03-20
•
Expires: 2019-02-26
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Circuitry for amplifying a single-ended analog sensor output includes a field effect transistor (FET) having a gate connected to a first end of a capacitor, the second opposite end of which is connectable to the sensor output. The gate of the FET is also connected to a first end of a resistor and to a cathode of a diode. The anode of the diode, the opposite end of the resistor and the drain of the FET are connectable to a ground reference, and the source of the FET defines an amplifier output that is connectable to a constant current source. The capacitor, resistor and diode are operable to bias the FET to thereby prevent clipping of the output signal at the amplifier output. A high-pass filter is also provided at the second end of the capacitor, and a number of diodes are preferably included for providing for amplifier input protection, electrostatic discharge protection and output DC overvoltage protection. When the amplifying circuit of the present invention is implemented integral with a single-ended, case grounded sensor configuration, only one wire per sensor is required.

Inventors

  • 👤 Mark C. Sellnau
  • 👤 Raymond A. Tidrow

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 09:59
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/50; H03F3/505

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 159 words
A signal amplifying circuit comprising: a first capacitor having a first end adapted for connection to a signal source and a second opposite end; a field effect transistor (FET) having a gate connected to said second end of said first capacitor, one of a drain and a source adapted for connection to a reference potential and an opposite one of said drain and a source defining a circuit output; and a first diode having a cathode connected to said gate and an anode connected to said one of a drain and a source adapted for connection to a reference potential, said first capacitor and said first diode establishing a positive bias at said gate of said FET with respect to said reference potential when an input signal at said first end of said first capacitor is negative with respect to said reference potential to thereby prevent clipping of an output signal provided by said FET at said circuit output.
Claim 2
Dependent Claim 159 words
A signal amplifying circuit comprising: a first capacitor having a first end adapted for connection to a signal source and a second opposite end; a field effect transistor (FET) having a gate connected to said second end of said first capacitor, one of a drain and a source adapted for connection to a reference potential and an opposite one of said drain and a source defining a circuit output; and a first diode having a cathode connected to said gate and an anode connected to said one of a drain and a source adapted for connection to a reference potential, said first capacitor and said first diode establishing a positive bias at said gate of said FET with respect to said reference potential when an input signal at said first end of said first capacitor is negative with respect to said reference potential to thereby prevent clipping of an output signal provided by said FET at said circuit output.
Claim 3
Dependent Claim 53 words
The signal amplifier circuit of claim 1 further including a second capacitor having a first end connected to said first end of said first capacitor and a second opposite end connected to said anode of said first diode, said second capacitor forming a charge attenuator and determining a gain of said amplifier circuit.
Claim 4
Dependent Claim 50 words
The signal amplifier circuit of claim 2 further including a second resistor having a first end connected to said first end of said first capacitor and a second opposite end connected to said anode of said first diode, said second resistor and said second capacitor forming a high pass filter.
Claim 5
Dependent Claim 67 words
The signal amplifier of claim 3 further including: a second diode having an anode connected to said gate of said FET and a cathode connected to said circuit output; and a third diode having an anode connected to said second end of said first resistor and a cathode connected to said circuit output, said first, second and third diodes providing for amplifier input and electrostatic discharge protection.
Claim 6
Dependent Claim 18 words
The signal amplifier of claim 1 wherein said FET is a metal oxide semiconductor field effect transistor (MOSFET).
Claim 7
Dependent Claim 15 words
The signal amplifier of claim 5 wherein said MOSFET is a p-channel enhancement mode MOSFET.
Claim 8
Dependent Claim 44 words
The signal amplifier of claim 1 further including a first resistor having a first end connected to said cathode and a second end connected to said anode of said first diode, said first resistor dissipating said positive bias on said gate of said FET.
Claim 9
Dependent Claim 158 words
A signal amplifying system comprising: a sensor responsive to excitation thereof to produce a sensor signal at a sensor output thereof; a signal amplifier having a first field effect transistor (FET) defining a gate coupled to said sensor output, one of a drain and a source connected to a reference potential and an opposite one of said drain and a source defining an amplifier output; a current source connected to said amplifier output and supplying a constant current thereto; a first diode connected between said gate of said first FET and said reference potential; and a capacitor connected between said sensor output and said gate of said first FET, said first diode and said first capacitor establishing a positive bias at said gate of said first FET with respect to said reference potential when said sensor signal is negative with respect to said reference potential to thereby prevent clipping of an output signal provided at said amplifier output.
Claim 10
Dependent Claim 158 words
A signal amplifying system comprising: a sensor responsive to excitation thereof to produce a sensor signal at a sensor output thereof; a signal amplifier having a first field effect transistor (FET) defining a gate coupled to said sensor output, one of a drain and a source connected to a reference potential and an opposite one of said drain and a source defining an amplifier output; a current source connected to said amplifier output and supplying a constant current thereto; a first diode connected between said gate of said first FET and said reference potential; and a capacitor connected between said sensor output and said gate of said first FET, said first diode and said first capacitor establishing a positive bias at said gate of said first FET with respect to said reference potential when said sensor signal is negative with respect to said reference potential to thereby prevent clipping of an output signal provided at said amplifier output.
Claim 11
Dependent Claim 26 words
The signal amplifying system of claim 8 wherein said sensor is a high impedance sensor operable to produce a single-ended output signal at said sensor output.
Claim 12
Dependent Claim 14 words
The signal amplifying system of claim 9 wherein said sensor is a piezoelectric sensor.
Claim 13
Dependent Claim 26 words
The signal amplifying system of claim 10 wherein said sensor is a pressure sensor operable to sense pressure in a cylinder of an internal combustion engine.
Claim 14
Dependent Claim 24 words
The signal amplifying system of claim 8 wherein said current source forms part of a circuit separate from said sensor and said amplifier circuit.
Claim 15
Dependent Claim 18 words
The signal amplifying system of claim 8 further including means for limiting load current through said first FET.
Claim 16
Dependent Claim 75 words
The signal amplifying system of claim 13 wherein said means for limiting load current through said first FET includes a second field effect transistor (FET) disposed between said amplifier output and said opposite one of said drain and source of said first FET, said second FET having a drain connected to said amplifier output and a gate and source each connected to said opposite one of said drain and a source of said first FET.
Claim 17
Dependent Claim 85 words
The signal amplifying system of claim 14 further including: a second diode having an anode connected to said gate of said first FET and a cathode connected to said source and gate of said second FET; a third diode having an anode connected to said reference potential and a cathode connected to said source and gate of said second FET; and a fourth diode having an anode connected to said source and gate of said second FET and a cathode connected to said amplifier output.
Claim 18
Dependent Claim 51 words
The signal amplifying system of claim 14 further including: a second diode having an anode connected to said gate of said first FET and a cathode connected to said amplifier output; and a third diode having an anode connected to said reference potential and a cathode connected to said amplifier output.
Claim 19
Dependent Claim 18 words
The signal amplifying system of claim 14 wherein said second FET is a junction field effect transistor (JFET).
Claim 20
Dependent Claim 66 words
The signal amplifying system of claim 14 further including: a second capacitor having a first end connected to said sensor output and a second opposite end connected to said reference potential; and a resistor having a first end connected to said first end of said capacitor and a second opposite end connected to said reference potential, said resistor and said capacitor forming a high pass filter.
Claim 21
Dependent Claim 22 words
The signal amplifying system of claim 18 wherein said first FET is a metal oxide semiconductor p-channel enhancement mode field effect transistor.
Claim 22
Dependent Claim 35 words
The signal amplifying system of claim 8 further including a resistor connected between said gate of said FET and said reference potential, said resistor dissipating said positive bias on said gate of said first FET.

References Cited (Backward Citations)

US3798559A Cited
US3935479A Cited
US4241266A Cited
US4464635A Cited
US4620438A Cited
US4668875A Cited
US4724702A Cited
US5062294A Cited
US5371472A Cited
US5264736A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-03-19 2004-09-18 2005-03-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-03-19 2008-09-18 2009-03-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-03-19 2012-09-18 2013-03-20 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag