Patent US6203863B1 successfully refreshed from Google Patents.
US6203863B1
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Method of gap filling
Assignee: United Microelectronics Corp
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Filing: 1998-11-27
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Granted: 2001-03-20
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Expires: 2018-11-27
Abstract
Abstract A method of gap filling by using HDPCVD. On a substrate having a conductive structure, a first oxide layer is formed to protect the conductive structure. While forming the first oxide layer no bias is applied. An argon flow with a high speed of etching/deposition is provided to form a second oxide layer. While forming the second oxide layer a triangular or trapezium profile is formed due to an etching effect to the corner. An argon flow with a low speed of etching/deposition is provided to form a third oxide layer. The gap filling is completed.
Inventors
- 👤 Chih-Chien Liu
- 👤 Juan-Yuan Wu
- 👤 Water Lur
- 👤 Shih-Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/50; H10P14/65; H10P14/6502; H10P14/6506; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/098; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
134 words
A method for gap filling on a substrate having a plurality of conductive wirings and a gap between the conductive wirings, comprising: performing a first high density plasma chemical vapor deposition to form a first liner layer on the substrate, wherein a first etching/deposition ratio is substantially zero; performing a second high density plasma chemical vapor deposition to form a second liner layer on the first liner layer, wherein a second etching/deposition ratio with an etching effect is configured whereby portions of the first liner layer and the second liner layer on top corners of the conductive wirings are simultaneously etched; and performing a third high density plasma chemical vapor deposition to form an insulating layer on the second liner layer so as to fill the gap, wherein a third etching/deposition ratio suppresses etching.
Claim 2
Independent Claim
134 words
A method for gap filling on a substrate having a plurality of conductive wirings and a gap between the conductive wirings, comprising: performing a first high density plasma chemical vapor deposition to form a first liner layer on the substrate, wherein a first etching/deposition ratio is substantially zero; performing a second high density plasma chemical vapor deposition to form a second liner layer on the first liner layer, wherein a second etching/deposition ratio with an etching effect is configured whereby portions of the first liner layer and the second liner layer on top corners of the conductive wirings are simultaneously etched; and performing a third high density plasma chemical vapor deposition to form an insulating layer on the second liner layer so as to fill the gap, wherein a third etching/deposition ratio suppresses etching.
Claim 3
Dependent Claim
31 words
The method according to claim 1 , wherein the step of performing the first high density plasma chemical vapor deposition comprises the step of: applying a zero bias to the substrate.
Claim 4
Dependent Claim
37 words
The method according to claim 1 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: applying a first bias to the substrate to obtain the second etching/deposition ratio.
Claim 5
Dependent Claim
33 words
The method according to claim 1 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: depositing with the second etching/deposition ratio greater than 0.25.
Claim 6
Dependent Claim
41 words
The method according to claim 1 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: depositing with a flowing rate ratio of an inert gas to a reaction gas greater than one.
Claim 7
Dependent Claim
22 words
The method according to claim 5 , wherein the step of depositing comprises the step of: utilizing argon as the inert gas.
Claim 8
Dependent Claim
28 words
The method according to claim 5 , wherein the step of depositing comprises the step of: utilizing argon as the inert gas and silane as the reaction gas.
Claim 9
Dependent Claim
37 words
The method according to claim 5 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: applying a second bias to the substrate to obtain the third etching/deposition ratio.
Claim 10
Dependent Claim
33 words
The method according to claim 5 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: depositing with the third etching/depositing ratio less than 0.2.
Claim 11
Dependent Claim
33 words
The method according to claim 5 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: depositing with the flowing rate ratio less than one.
Claim 12
Dependent Claim
30 words
The method according to claim 10 , wherein the step of depositing with said flowing rate ratio greater than one comprises the step of: utilizing argon as the inert gas.
Claim 13
Dependent Claim
36 words
The method according to claim 10 , wherein the step of depositing with said flowing rate ratio less than one comprises the step of: utilizing argon as the inert gas and silane as the reaction gas.
Claim 14
Independent Claim
157 words
A method of gap filling on a substrate having a plurality of conductive wirings and a gap between the conductive wirings, comprising: performing a first high density plasma chemical vapor deposition to form a first liner layer on the substrate, wherein a first etching/deposition ratio for the first high density plasma chemical vapor deposition is substantially zero; performing a second high density plasma chemical vapor deposition to form a second liner layer on the first liner layer, wherein a first flowing rate ratio of an inert gas to a reaction gas is configured whereby portions of the first liner layer and the second liner layer on top corners of the conductive wirings are simultaneously etched; and performing a third high density plasma chemical vapor deposition to form an insulating layer on the second liner layer so as to fill the gap, wherein a second flowing rate ratio of the inert gas to the reaction gas suppresses etching.
Claim 15
Independent Claim
157 words
A method of gap filling on a substrate having a plurality of conductive wirings and a gap between the conductive wirings, comprising: performing a first high density plasma chemical vapor deposition to form a first liner layer on the substrate, wherein a first etching/deposition ratio for the first high density plasma chemical vapor deposition is substantially zero; performing a second high density plasma chemical vapor deposition to form a second liner layer on the first liner layer, wherein a first flowing rate ratio of an inert gas to a reaction gas is configured whereby portions of the first liner layer and the second liner layer on top corners of the conductive wirings are simultaneously etched; and performing a third high density plasma chemical vapor deposition to form an insulating layer on the second liner layer so as to fill the gap, wherein a second flowing rate ratio of the inert gas to the reaction gas suppresses etching.
Claim 16
Dependent Claim
31 words
The method according to claim 13 , wherein the step of performing the first high density plasma chemical vapor deposition comprises the step of: applying a zero bias to the substrate.
Claim 17
Dependent Claim
34 words
The method according to claim 13 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: depositing with the first flowing rate ratio greater than one.
Claim 18
Dependent Claim
34 words
The method according to claim 13 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: depositing with the second flowing rate ratio less than one.
Claim 19
Dependent Claim
39 words
The method according to claim 13 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: applying a bias to the substrate to control an etching rate on the second liner.
Claim 20
Dependent Claim
33 words
The method according to claim 17 , wherein the step of performing the second high density plasma chemical vapor deposition comprises the step of: depositing with a second etching/deposition ratio greater than 0.25.
Claim 21
Dependent Claim
35 words
The method according to claim 15 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: applying a bias to the substrate to suppress an etching rate.
Claim 22
Dependent Claim
33 words
The method according to claim 19 , wherein the step of performing the third high density plasma chemical vapor deposition comprises the step of: depositing with a third etching/deposition ratio less than 0.2.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2008-03-19 | 2008-09-18 | 2009-03-20 | $3760.00 | Window Closed / Lapsed |
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