US6197705B1
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Method of silicon oxide and silicon glass films deposition
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1999-03-18
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Granted: 2001-03-06
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Expires: 2019-03-18
Abstract
Abstract A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O3/O2 PACVD) is described. It combines advantages of both low temperature Plasma-Enhanced Chemical Vapor Deposition (PECVD) and TEOS-ozone Sub-Atmospheric Chemical Vapor Deposition (SACVD) and yields a coating of silicon oxide with stable and high deposition rate, no surface sensitivity, good film properties, conformal step coverage and good gap-fill. Key features of the invention's O3/O2 PACVD process are: a plasma is maintain throughout the entire deposition step in a parallel plate type reactor chamber, the precise RF plasma density, ozone concentration in oxygen and the deposition temperature. These features provide the reaction conditions for the proper O3/O2 reaction mechanism that deposits a conformal silicon oxide layer. The process has significant implication for semiconductor device manufacturing involving the deposition of a dielectric over a conducting non-planar surface.
Inventors
- 👤 Vladislav Vassiliev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/6922; H10P14/6924; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A method of forming a silicon oxide film over a heated substrate by a Plasma Activated chemical vapor deposition (PACVD) using TEOS and an ozone source as reactants in the constant presence of a plasma; the method comprising the steps of: a) placing a substrate in a parallel plate type reactor chamber; said substrate has an upper surface with a plurality of steps; b) in a deposition step, inducing a reaction in a gaseous mixture composition to produce deposition of a silicon oxide film over said substrate, said silicon oxide film is deposited by subjecting said substrate to a plasma during all of said deposition step and wherein said composition comprises tetraethoxysilane (TEOS) a source of ozone, and fluorotriethoxysilane; and wherein after said deposition of said silicon oxide film, a corner in said silicon oxide film between said steps is avoided.
Claim 2
Independent Claim
141 words
A method of forming a silicon oxide film over a heated substrate by a Plasma Activated chemical vapor deposition (PACVD) using TEOS and an ozone source as reactants in the constant presence of a plasma; the method comprising the steps of: a) placing a substrate in a parallel plate type reactor chamber; said substrate has an upper surface with a plurality of steps; b) in a deposition step, inducing a reaction in a gaseous mixture composition to produce deposition of a silicon oxide film over said substrate, said silicon oxide film is deposited by subjecting said substrate to a plasma during all of said deposition step and wherein said composition comprises tetraethoxysilane (TEOS) a source of ozone, and fluorotriethoxysilane; and wherein after said deposition of said silicon oxide film, a corner in said silicon oxide film between said steps is avoided.
Claim 3
Dependent Claim
104 words
The method of claim 1 wherein said reaction occurs under the following conditions: a frequency of energy of reaction chamber to produce said plasma is between about 400 KHz and 1356 Khz; and said plasma has a plasma density in the range of between about 0.05 and 0.5 W/cm 2 ; and said source of ozone is a O 3 /O 2 mixture with an Ozone concentration in oxygen between 10 and 13 wt % and said O 3 /O 2 mixture has a flow rate between 3000 and 6000 SCCM; and at a temperature of said substrate between about 300 and 500° C.
Claim 4
Dependent Claim
104 words
The method of claim 1 wherein said reaction occurs under the following conditions: a Wafer temperature between 300 and 500° C., a Pressure between 0.2 and 20 torr, a Plasma density between 0.05 and 0.5 W/cm 2 , a Plasma frequency between 400 and 1356 KHz, said source of ozone is a O 3 /O 2 mixture with an Ozone concentration in oxygen between 10 and 13 wt % and said O 3 /O 2 mixture has a flow rate between 3000 and 6000 SCCM; and He Carrier gas flow between 1000 and 6000 sccm; and a Wafer spacing between 200 and 600 mils.
Claim 5
Dependent Claim
111 words
The method of claim 1 wherein said reaction occurs at the following conditions: a Wafer temperature between 380 and 440° C., a pressure between 6 and 14 torr; a Plasma density between 0.1 and 0.3 W/cm 2 ; a Plasma frequency between 1350 and 1360 KHz; a TEOS flow between 300 and 600 mgm; said source of ozone is a O 3 /O 2 mixture with an Ozone concentration in oxygen between 10 and 13 wt % and said O 3 /O 2 mixture has a flow rate between 3000 and 6000 SCCM; a He Carrier gas flow between 1500 and 3000 sccm; a Wafer spacing between 230 and 300 mils.
Claim 6
Dependent Claim
42 words
The method of claim 1 wherein said prior to said deposition step; performing insitu an oxide liner step to form on oxide liner over said substrate and then performing said deposition step to deposit said silicon oxide film over said oxide liner.
References Cited (Backward Citations)
US5362526A
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US5643838A
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JPH0438829A
Cited
US5271972A
Cited
US5593741A
Cited
US5933760A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-03-05 | 2004-09-04 | 2005-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-05 | 2008-09-04 | 2009-03-06 | $3760.00 | Window Closed / Lapsed |
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