US6197181B1
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US
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Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
Assignee: Applied Materials Inc
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Filing: 1998-03-20
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Granted: 2001-03-06
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Expires: 2018-03-20
Abstract
Abstract A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.
Inventors
- 👤 LinLin Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W20/041; H10W20/042; H10W20/043; H05; H05K; H05K3/00; H05K3/40; H05K3/42; H05K3/423; H10W20/0425
Claims Analysis
Total Claims: 72
Claim 1
Independent Claim
217 words
A process for applying a metal to a microelectronic workpiece, the microelectronic workpiece including an exteriorly disposed surface having a plurality of micro-recessed structures that are defined by sidewalls, the microelectronic workpiece further including a barrier layer deposited on at least a portion of the exteriorly disposed surface of the microelectronic workpiece and on at least substantial portions of the walls of the plurality of micro-recessed structures, the process comprising the steps of: (a) forming an ultra-thin metal seed layer exterior to the barrier layer using a first deposition process, the seed layer having a thickness of less than or equal to about 500 Angstroms; (b) repairing the ultra-thin seed layer by depositing an additional metal using a second deposition process that is different from the first deposition process to provide a repaired seed layer that is suitable for subsequent electroplating, the repaired seed layer having a thickness at all points on sidewalls of substantially all micro-recessed structures distributed within the workpiece that is equal to or greater than about 10% of the nominal thickness of the enhanced seed layer over the exteriorly disposed surface of the workpiece; (c) electroplating a metal onto the repaired seed layer using a third deposition process using processing parameters that are different from processing parameters used in the second deposition process.
Claim 2
Dependent Claim
217 words
A process for applying a metal to a microelectronic workpiece, the microelectronic workpiece including an exteriorly disposed surface having a plurality of micro-recessed structures that are defined by sidewalls, the microelectronic workpiece further including a barrier layer deposited on at least a portion of the exteriorly disposed surface of the microelectronic workpiece and on at least substantial portions of the walls of the plurality of micro-recessed structures, the process comprising the steps of: (a) forming an ultra-thin metal seed layer exterior to the barrier layer using a first deposition process, the seed layer having a thickness of less than or equal to about 500 Angstroms; (b) repairing the ultra-thin seed layer by depositing an additional metal using a second deposition process that is different from the first deposition process to provide a repaired seed layer that is suitable for subsequent electroplating, the repaired seed layer having a thickness at all points on sidewalls of substantially all micro-recessed structures distributed within the workpiece that is equal to or greater than about 10% of the nominal thickness of the enhanced seed layer over the exteriorly disposed surface of the workpiece; (c) electroplating a metal onto the repaired seed layer using a third deposition process using processing parameters that are different from processing parameters used in the second deposition process.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein the additional metal is copper.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein the ultra-thin seed layer is enhanced by a process comprising an electrochemical deposition step.
Claim 5
Dependent Claim
15 words
The process of claim 3 wherein the electrochemical deposition step occurs in an alkaline bath.
Claim 6
Dependent Claim
21 words
The process of claim 4 wherein the alkaline bath comprises metal ions and an agent effective in complexing the metal ions.
Claim 7
Dependent Claim
24 words
The process of claim 5 wherein the complexing agent is comprised of one or more complexing agents selected from EDTA, ED, and polycarboxylic acid.
Claim 8
Dependent Claim
30 words
The process of claim 5 wherein the complexing agent is comprised of EDTA and the EDTA in the bath has a concentration within the range of 0.03 to 1.0 M.
Claim 9
Dependent Claim
32 words
The process of claim 6 wherein the complexing agent is comprised of ED and wherein the ED in the electrolytic bath has a concentration within the range of 0.03 to 1.0 M.
Claim 10
Dependent Claim
32 words
The process of claim 6 wherein the complexing agent is comprised of citric acid and the citric acid in the bath has a concentration within the range of 0.03 to 1.0 M.
Claim 11
Dependent Claim
27 words
The process of claim 7 wherein the complexing agent is comprised of EDTA and the EDTA has a concentration within the range of 0.1 to 0.4 M.
Claim 12
Dependent Claim
32 words
The process of claim 4 wherein the third deposition process takes place in an acidic electrolytic solution to the metal to at least a thickness needed to substantially fill the micro-recessed structures.
Claim 13
Dependent Claim
39 words
The process of claim 11 and further comprising the step of subjecting the microelectronic workpiece to a rinsing process after electrochemical deposition in the alkaline bath and prior to the further electrochemical deposition process in an acidic electrolytic solution.
Claim 14
Dependent Claim
21 words
The process of claim 1 wherein the ultra-thin metal seed layer formed in step (a) is formed by physical vapor deposition.
Claim 15
Dependent Claim
25 words
The process of claim 1 wherein the ultra-thin metal seed layer formed in step (a) has a thickness of about 50 to about 500 Angstroms.
Claim 16
Dependent Claim
24 words
The process of claim 14 wherein the ultra-thin metal layer formed in step (a) has a thickness of about 100 to about 250 Angstroms.
Claim 17
Dependent Claim
135 words
In a manufacturing line including a plurality of apparatus for the manufacture of micro-sized metal structures on a microelectronic workpiece, one or more apparatus of the plurality of apparatus being used for applying metal to a surface of the microelectronic workpiece, the one or more apparatus comprising: means for applying a conductive ultra-thin seed layer to a surface of the microelectronic workpiece using a first deposition process, the ultra-thin seed layer having a thickness of less than 500 Angstroms; means for electrochemically repairing the conductive ultra-thin seed layer using a second deposition process that differs from the first deposition process to thereby provide repaired seed layer that is suitable for subsequent electroplating; means for electroplating a metal onto the repaired seed layer to a predetermined thickness representing a bulk portion of the micro-sized metal structure.
Claim 18
Dependent Claim
135 words
In a manufacturing line including a plurality of apparatus for the manufacture of micro-sized metal structures on a microelectronic workpiece, one or more apparatus of the plurality of apparatus being used for applying metal to a surface of the microelectronic workpiece, the one or more apparatus comprising: means for applying a conductive ultra-thin seed layer to a surface of the microelectronic workpiece using a first deposition process, the ultra-thin seed layer having a thickness of less than 500 Angstroms; means for electrochemically repairing the conductive ultra-thin seed layer using a second deposition process that differs from the first deposition process to thereby provide repaired seed layer that is suitable for subsequent electroplating; means for electroplating a metal onto the repaired seed layer to a predetermined thickness representing a bulk portion of the micro-sized metal structure.
Claim 19
Dependent Claim
36 words
One or more apparatus as claimed in claim 16 wherein the means for applying is further defined by means for applying a conductive ultra-thin copper seed layer to a barrier layer surface of the microelectronic workpiece.
Claim 20
Dependent Claim
46 words
One or more apparatus as claimed in claim 17 wherein the means for electrochemically enhancing the conductive ultra-thin seed layer is further defined by means for electrochemically enhancing the conductive ultra-thin seed layer by electrochemically depositing copper using an alkaline copper bath having a complexing agent.
Claim 21
Dependent Claim
37 words
One or more apparatus as claimed in claim 18 wherein the electrochemical enhancement of the ultra-thin seed layer takes place at a plating voltage having a magnitude that is at least about or greater than 1.1 volts.
Claim 22
Dependent Claim
22 words
One or more apparatus as claimed in claim 18 , wherein the alkaline bath has a pH> or equal to about 9.0.
Claim 23
Dependent Claim
17 words
One or more apparatus as claimed in claim 18 wherein the complexing agent is comprised of EDTA.
Claim 24
Dependent Claim
17 words
One or more apparatus as claimed in claim 18 wherein the complexing agent is comprised of ED.
Claim 25
Dependent Claim
23 words
One or more apparatus as claimed in claim 18 wherein the complexing agent is a comprised of a carboxylic acid or salt thereof.
Claim 26
Dependent Claim
19 words
One or more apparatus as claimed in claim 23 wherein the complexing agent is citric acid or salt thereof.
Claim 27
Dependent Claim
30 words
One or more apparatus as claimed in claim 18 wherein said means for electroplating comprises means for electroplating copper over the repaired seed layer by using an acidic copper bath.
Claim 28
Dependent Claim
42 words
One or more apparatus as claimed in claim 25 wherein the electrochemical enhancement of the ultra-thin seed layer takes place at a plating voltage having a magnitude that is greater than the magnitude of the plating voltage in the acidic copper bath.
Claim 29
Dependent Claim
33 words
One or more apparatus as claimed in claim 26 and further comprising means for rinsing the microelectronic workpiece prior to its introduction to the means for electrochemically adding a further layer of copper.
Claim 30
Dependent Claim
40 words
One or more apparatus as claimed in claim 16 wherein the means for applying is further defined by means for applying a conductive ultra-thin copper seed layer to a barrier layer surface of the microelectronic workpiece using a PVD process.
Claim 31
Dependent Claim
40 words
One or more apparatus as claimed in claim 16 wherein the means for applying is further defined by means for applying a conductive ultra-thin copper seed layer to a barrier layer surface of the microelectronic workpiece using a CVD process.
Claim 32
Dependent Claim
151 words
A process for applying a metal to a surface of a microelectronic workpiece pursuant to forming one or more micro-sized metal structures thereon, the microelectronic workpiece including a barrier layer deposited on at least a portion of the surface of the microelectronic workpiece, the process comprising the steps of: (a) forming an ultra-thin metal seed layer on the barrier layer, the ultra-thin metal seed layer having a thickness of less than 500 Angstroms; (b) subjecting the microelectronic workpiece to a first electrochemical copper deposition process in an alkaline electrolytic bath having copper ions complexed with a complexing agent such that additional copper is deposited on the ultra-thin metal seed layer to repair the seed layer so that is suitable for subsequent electrochemical deposition; (c) subjecting the microelectronic workpiece to a second electrochemical copper deposition process using processing parameters that differ from processing parameters used in the first electrochemical copper deposition process.
Claim 33
Dependent Claim
151 words
A process for applying a metal to a surface of a microelectronic workpiece pursuant to forming one or more micro-sized metal structures thereon, the microelectronic workpiece including a barrier layer deposited on at least a portion of the surface of the microelectronic workpiece, the process comprising the steps of: (a) forming an ultra-thin metal seed layer on the barrier layer, the ultra-thin metal seed layer having a thickness of less than 500 Angstroms; (b) subjecting the microelectronic workpiece to a first electrochemical copper deposition process in an alkaline electrolytic bath having copper ions complexed with a complexing agent such that additional copper is deposited on the ultra-thin metal seed layer to repair the seed layer so that is suitable for subsequent electrochemical deposition; (c) subjecting the microelectronic workpiece to a second electrochemical copper deposition process using processing parameters that differ from processing parameters used in the first electrochemical copper deposition process.
Claim 34
Dependent Claim
21 words
The process of claim 30 wherein the ultra-thin metal seed layer formed in step (a) is formed by physical vapor deposition.
Claim 35
Dependent Claim
24 words
The process of claim 30 wherein the ultra-thin seed layer formed in step (a) has a thickness of about 50 to about 500 Angstroms.
Claim 36
Dependent Claim
24 words
The process of claim 32 wherein the ultra-thin seed layer formed in step (a) has a thickness of about 100 to about 250 Angstroms.
Claim 37
Dependent Claim
21 words
The process of claim 33 wherein the ultra-thin seed layer formed in step (a) has a thickness of about 200 Angstroms.
Claim 38
Dependent Claim
17 words
The process of claim 30 wherein the alkaline electrolytic bath has a pH of at least 9.0.
Claim 39
Dependent Claim
18 words
The process of claim 30 wherein the copper ions in the electrolytic bath are provided by copper sulfate.
Claim 40
Dependent Claim
24 words
The process of claim 36 wherein the copper sulfate in the electrolytic bath has a concentration within the range of 0.03 to 0.25 M.
Claim 41
Dependent Claim
15 words
The process of claim 36 wherein the concentration of copper sulfate is about 0.1 M.
Claim 42
Dependent Claim
24 words
The process of claim 30 wherein the copper complexing agent is comprised of a copper complexing agent selected from EDTA, ED, and citric acid.
Claim 43
Dependent Claim
31 words
The process of claim 39 wherein the complexing agent is comprised of EDTA and the EDTA in the electrolytic bath has a concentration within the range of 0.03 to 1.0 M.
Claim 44
Dependent Claim
31 words
The process of claim 39 wherein the complexing agent is comprised of ED and the ED in the electrolytic bath has a concentration within the range of 0.03 to 1.0 M.
Claim 45
Dependent Claim
27 words
The process of claim 39 wherein the complexing agent is comprised of EDTA and the EDTA has a concentration within the range of 0.1 to 0.4 M.
Claim 46
Dependent Claim
14 words
The process of claim 30 wherein the complexing agent is comprised of citric acid.
Claim 47
Dependent Claim
19 words
The process of claim 43 wherein the citric acid has a concentration within the range of0.1 to 0.4 M.
Claim 48
Dependent Claim
37 words
The process of claim 30 wherein the second electrochemical copper deposition process takes place in an acidic electrolytic solution to complete deposition of the copper to a thickness needed for the formation of the micro-sized metal structure.
Claim 49
Dependent Claim
36 words
The process of claim 45 and further comprising the step of subjecting the microelectronic workpiece to a rinsing process after step (b) and prior to the second electrochemical copper deposition process in the acidic electrolytic solution.
Claim 50
Dependent Claim
162 words
A process for applying a metal to a microelectronic workpiece pursuant to forming a micro-sized metal structure on a surface of the microelectronic workpiece, the process comprising: (a) forming a metal seed layer on a surface of the workpiece using a first deposition process, the metal seed layer being generally unsuitable for bulk deposition of a metal that is to be used to form the micro-sized metal structure; (b) repairing the seed layer by depositing additional metal on the seed layer using a second deposition process that differs from the first deposition process to thereby provide a repaired seed layer that is suitable for subsequent bulk deposition of a metal that is to be used to form the micro-sized metal structure; (c) subjecting the microelectronic workpiece to a third deposition process using processing parameters that differ from processing parameters used in the second deposition process to deposit a bulk amount of the metal that is used to form the micro-sized metal structure.
Claim 51
Dependent Claim
162 words
A process for applying a metal to a microelectronic workpiece pursuant to forming a micro-sized metal structure on a surface of the microelectronic workpiece, the process comprising: (a) forming a metal seed layer on a surface of the workpiece using a first deposition process, the metal seed layer being generally unsuitable for bulk deposition of a metal that is to be used to form the micro-sized metal structure; (b) repairing the seed layer by depositing additional metal on the seed layer using a second deposition process that differs from the first deposition process to thereby provide a repaired seed layer that is suitable for subsequent bulk deposition of a metal that is to be used to form the micro-sized metal structure; (c) subjecting the microelectronic workpiece to a third deposition process using processing parameters that differ from processing parameters used in the second deposition process to deposit a bulk amount of the metal that is used to form the micro-sized metal structure.
Claim 52
Dependent Claim
23 words
The process of claim 47 wherein the metal layer formed in step (a) has a thickness of about 100 to about 250 Angstroms.
Claim 53
Dependent Claim
21 words
The process of claim 48 wherein the metal seed layer of step (a) is formed in a physical vapor deposition process.
Claim 54
Dependent Claim
21 words
The process of claim 48 wherein the metal seed layer of step (a) is formed in a chemical vapor deposition process.
Claim 55
Dependent Claim
20 words
The process of claim 48 wherein the seed layer is enhanced in step (b) by electrochemically depositing the additional metal.
Claim 56
Dependent Claim
39 words
The process of claim 51 wherein the microelectronic workpiece comprises a barrier layer on which the seed layer is formed and wherein the additional metal is electrolytically deposited using an alkaline electrolytic plating solution that includes a complexing agent.
Claim 57
Dependent Claim
19 words
The process of claim 52 wherein the deposition of step (c) takes place in an acidic electrolytic plating solution.
Claim 58
Dependent Claim
40 words
The process of claim 53 and further comprising the step of rinsing the microelectronic workpiece after electrolytically repairing the seed layer in the alkaline electrolytic plating solution and prior to subjecting the microelectronic workpiece to the acidic electrolytic plating solution.
Claim 59
Dependent Claim
21 words
The process of claim 47 wherein the metal seed layer of step (a) is formed in a physical vapor deposition process.
Claim 60
Dependent Claim
21 words
The process of claim 47 wherein the metal seed layer of step (a) is formed in a chemical vapor deposition process.
Claim 61
Dependent Claim
40 words
The process of claim 56 wherein the microelectronic workpiece comprises a barrier layer on which the seed layer is formed and wherein the additional metal layer is electrolytically deposited using an alkaline electrolytic plating solution that includes a complexing agent.
Claim 62
Dependent Claim
21 words
The process of claim 47 wherein the seed layer is enhanced in step (b) by electrochemically depositing the additional metal layer.
Claim 63
Dependent Claim
39 words
The process of claim 58 wherein the third deposition process of step (c) comprises the step of electrolytically depositing the bulk amount of the metal on the surface of the repaired seed layer in an acidic electrolytic plating solution.
Claim 64
Dependent Claim
40 words
The process of claim 59 and further comprising the step of rinsing the microelectronic workpiece after electrolytically repairing the seed layer in the alkaline electrolytic plating solution and prior to subjecting the microelectronic workpiece to the acidic electrolytic plating solution.
Claim 65
Dependent Claim
123 words
In a manufacturing line including a plurality of apparatus for the manufacture of microelectronic circuits or components, one or more apparatus of the plurality of apparatus being used for applying interconnect metallization in a damascene process to a surface of a microelectronic workpiece used to form the microelectronic circuits or components, the one or more apparatus comprising: means for applying a metal seed layer to a surface of the microelectronic workpiece using a physical vapor deposition process, the metal seed layer being generally unsuitable for bulk electrochemical deposition of the interconnect metallization; means for electrochemically repairing the metal seed layer to render it suitable for subsequent electrochemical application of a metal to a predetermined thickness representing a bulk portion of the interconnect metallization.
Claim 66
Dependent Claim
123 words
In a manufacturing line including a plurality of apparatus for the manufacture of microelectronic circuits or components, one or more apparatus of the plurality of apparatus being used for applying interconnect metallization in a damascene process to a surface of a microelectronic workpiece used to form the microelectronic circuits or components, the one or more apparatus comprising: means for applying a metal seed layer to a surface of the microelectronic workpiece using a physical vapor deposition process, the metal seed layer being generally unsuitable for bulk electrochemical deposition of the interconnect metallization; means for electrochemically repairing the metal seed layer to render it suitable for subsequent electrochemical application of a metal to a predetermined thickness representing a bulk portion of the interconnect metallization.
Claim 67
Dependent Claim
133 words
A process for applying a metal to a microelectronic workpiece, the process comprising the steps of: (a) forming a metal seed layer using a first deposition process, the first deposition process physically anchoring the metal seed layer to an underlying layer, the metal seed layer having physical characteristics that render it generally unsuitable for bulk electrolytic deposition of a metal thereon; (b) repairing the seed layer by electrochemically depositing an additional metal on the seed layer using a second deposition process that is different from the first deposition process to form a repaired seed layer; (c) electrolytically depositing a metal on the repaired seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the seed layer.
Claim 68
Dependent Claim
133 words
A process for applying a metal to a microelectronic workpiece, the process comprising the steps of: (a) forming a metal seed layer using a first deposition process, the first deposition process physically anchoring the metal seed layer to an underlying layer, the metal seed layer having physical characteristics that render it generally unsuitable for bulk electrolytic deposition of a metal thereon; (b) repairing the seed layer by electrochemically depositing an additional metal on the seed layer using a second deposition process that is different from the first deposition process to form a repaired seed layer; (c) electrolytically depositing a metal on the repaired seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the seed layer.
Claim 69
Dependent Claim
134 words
A process for filling a micro-recessed structure disposed in a surface of a microelectronic workpiece with a metal, the microelectronic workpiece including a barrier layer deposited on at least a portion of the upper surface thereof and on surfaces of the plurality of micro-recessed structures, the process comprising the steps of: (a) forming a metal seed layer on the barrier layer using a physical vapor deposition process, the metal seed layer having physical characteristics that render it generally unsuitable for bulk, electrolytic deposition of a metal thereon; (b) repairing the seed layer by electrolytically depositing additional metal on the ultra-thin metal seed layer using an alkaline electroplating solution to thereby form a repaired seed layer; (c) substantially filling the micro-recessed structures with a metal in an electrolytic deposition process using an acidic electroplating solution.
Claim 70
Dependent Claim
134 words
A process for filling a micro-recessed structure disposed in a surface of a microelectronic workpiece with a metal, the microelectronic workpiece including a barrier layer deposited on at least a portion of the upper surface thereof and on surfaces of the plurality of micro-recessed structures, the process comprising the steps of: (a) forming a metal seed layer on the barrier layer using a physical vapor deposition process, the metal seed layer having physical characteristics that render it generally unsuitable for bulk, electrolytic deposition of a metal thereon; (b) repairing the seed layer by electrolytically depositing additional metal on the ultra-thin metal seed layer using an alkaline electroplating solution to thereby form a repaired seed layer; (c) substantially filling the micro-recessed structures with a metal in an electrolytic deposition process using an acidic electroplating solution.
Claim 71
Dependent Claim
132 words
A process for applying a metal to a microelectronic workpiece, the microelectronic workpiece including a surface in which are disposed a plurality of micro-recessed structures, the process comprising the steps of: (a) forming an ultra-thin metal seed layer on the surface of the microelectronic workpiece, including the walls of the plurality of micro-recessed structures, the ultra-thin metal seed layer being formed using a first deposition process; (b) enhancing the ultra-thin seed layer by depositing an additional metal using a second deposition process that is different from the first deposition process to provide an enhanced seed layer, the additional metal being formed from a metal comprising the same metal used to form the ultra-thin seed layer; and (c) electroplating a metal onto the enhanced seed layer so as to fill the micro-recessed structures.
Claim 72
Dependent Claim
132 words
A process for applying a metal to a microelectronic workpiece, the microelectronic workpiece including a surface in which are disposed a plurality of micro-recessed structures, the process comprising the steps of: (a) forming an ultra-thin metal seed layer on the surface of the microelectronic workpiece, including the walls of the plurality of micro-recessed structures, the ultra-thin metal seed layer being formed using a first deposition process; (b) enhancing the ultra-thin seed layer by depositing an additional metal using a second deposition process that is different from the first deposition process to provide an enhanced seed layer, the additional metal being formed from a metal comprising the same metal used to form the ultra-thin seed layer; and (c) electroplating a metal onto the enhanced seed layer so as to fill the micro-recessed structures.
References Cited (Backward Citations)
US3664933A
Cited
US3878066A
Cited
US4000046A
Cited
US4134802A
Cited
US4576689A
Cited
US5151168A
Cited
US5549808A
Cited
US5908543A
Cited
US5882498A
Cited
US5932077A
Cited
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