US6180513B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure
Assignee: Toshiba Corp
•
Filing: 1997-08-12
•
Granted: 2001-01-30
•
Expires: 2017-08-12
Abstract
Abstract Disclosed are an apparatus and a method for manufacturing a semiconductor device. A Si wafer set within an L/UL chamber is transferred under the state of a high vacuum through a transfer chamber into a Ti chamber. The wafer is heated to at least 300° C. within the Ti chamber by a heating mechanism arranged within the Ti chamber. Then, a TiSi x film is formed at a bottom portion of a contact hole by a plasma CVD method using an Ar gas supplied through a gas line as a carrier gas and a TiCl 4 gas supplied through another gas line as a source gas, Ti in the source gas being self-aligned with Si in the wafer. The wafer having the TiSi x film formed therein is transferred through the transfer chamber into a W chamber without being exposed to the air atmosphere. Within the W chamber, a W film is consecutively deposited by a selective CVD method on the TiSi x film. The particular technique makes it possible to form the TiSi x film of a high quality at a bottom portion of the contact hole even if the contact hole has a large aspect ratio.
Inventors
- 👤 Mari Otsuka
- 👤 Kenichi Otsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/032; H10W20/033; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414; H10P14/42; H10P14/43; H10P14/432; H10W20/057; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
143 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a first conductive layer; forming a contact hole through said insulating film to expose a portion of said first conductive layer; and forming a barrier metal layer on a bottom portion of said contact hole, which is said exposed portion of said first conductive layer, by a plasma CVD method using a source gas consisting of at least one kind of metal halide gas, or consisting of at least one kind of inert gas and at least one kind of metal halide gas, so as to be grown from and self-aligned with said first conductive layer, wherein a metal component of said metal halide gas is titanium and the step of forming the barrier metal layer finishes forming said barrier metal layer before initiation of titanium precipitation.
Claim 2
Independent Claim
143 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a first conductive layer; forming a contact hole through said insulating film to expose a portion of said first conductive layer; and forming a barrier metal layer on a bottom portion of said contact hole, which is said exposed portion of said first conductive layer, by a plasma CVD method using a source gas consisting of at least one kind of metal halide gas, or consisting of at least one kind of inert gas and at least one kind of metal halide gas, so as to be grown from and self-aligned with said first conductive layer, wherein a metal component of said metal halide gas is titanium and the step of forming the barrier metal layer finishes forming said barrier metal layer before initiation of titanium precipitation.
Claim 3
Dependent Claim
14 words
The method according to claim 1 , wherein said first conductive layer contains silicon.
Claim 4
Dependent Claim
16 words
The method according to claim 1 , wherein said source gas contains a TiCl 4 gas.
Claim 5
Dependent Claim
14 words
The method according to claim 1 , wherein said conductive material layer includes tungsten.
Claim 6
Dependent Claim
16 words
The method according to claim 1 , wherein said barrier metal includes a TiSi x film.
Claim 7
Dependent Claim
23 words
The method according to claim 1 , wherein said Ti precipitation is initiated about 90 seconds after start-up of said plasma CVD method.
Claim 8
Dependent Claim
53 words
The method according to claim 1 , wherein said step of forming a barrier metal layer includes a step of reacting said source gas with said first conductive layer to form said barrier layer, such that a bottom portion of said barrier layer is embedded in a surface of said first conductive layer.
Claim 9
Dependent Claim
74 words
The method according to claim 1 , further comprising the steps of: forming a conductive film by a selective CVD method on said barrier metal layer formed in the bottom portion of said contact hole, consecutively after forming said barrier metal layer without being exposed to an air atmosphere; and forming a second conductive layer said on said insulating film so as to be connected to said conductive film formed in said contact hole.
Claim 10
Independent Claim
245 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a first conductive layer; forming a contact hole through said insulating film to expose a portion of said first conductive layer; forming a barrier metal layer in a bottom portion of said contact hole, which is said exposed portion of said first conductive layer, by a plasma CVD method using a source gas consisting of at least one kind of metal halide gas, or consisting of at least one kind of inert gas and at least one kind of metal halide gas, so as to be grown from and self-aligned with said first conductive layer, wherein said step of forming a barrier metal layer includes reacting said source gas with said first conductive layer to form said barrier layer, such that a bottom portion of said barrier layer is embedded in a surface of said conductive layer; wherein a metal component of said metal halide gas is titanium and said step of forming a barrier metal layer finishes forming said barrier metal layer before initiation of titanium precipitation; forming a conductive film by a selective CVD method on said barrier metal layer formed in the bottom portion of said contact hole, consecutively after forming said barrier metal layer without being exposed to an air atmosphere, and forming a second conductive layer on said insulation film so as to be connected to said conductive film formed in said contact hole.
Claim 11
Independent Claim
245 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a first conductive layer; forming a contact hole through said insulating film to expose a portion of said first conductive layer; forming a barrier metal layer in a bottom portion of said contact hole, which is said exposed portion of said first conductive layer, by a plasma CVD method using a source gas consisting of at least one kind of metal halide gas, or consisting of at least one kind of inert gas and at least one kind of metal halide gas, so as to be grown from and self-aligned with said first conductive layer, wherein said step of forming a barrier metal layer includes reacting said source gas with said first conductive layer to form said barrier layer, such that a bottom portion of said barrier layer is embedded in a surface of said conductive layer; wherein a metal component of said metal halide gas is titanium and said step of forming a barrier metal layer finishes forming said barrier metal layer before initiation of titanium precipitation; forming a conductive film by a selective CVD method on said barrier metal layer formed in the bottom portion of said contact hole, consecutively after forming said barrier metal layer without being exposed to an air atmosphere, and forming a second conductive layer on said insulation film so as to be connected to said conductive film formed in said contact hole.
Claim 12
Dependent Claim
14 words
The method according to claim 9 , wherein said first conductive layer contains silicon.
Claim 13
Dependent Claim
16 words
The method according to claim 9 , wherein said source gas contains a TiCl 4 gas.
Claim 14
Dependent Claim
15 words
The method according to claim 9 , wherein said conductive material layer consists of tungsten.
Claim 15
Dependent Claim
16 words
The method according to claim 9 , wherein said barrier metal includes a TiSi x film.
Claim 16
Dependent Claim
23 words
The method according to claim 9 , wherein said Ti precipitation is initiated about 90 seconds after start-up of said plasma CVD method.
Claim 17
Dependent Claim
30 words
The method according to claim 9 , wherein said step for forming a barrier metal layer and said step of forming a conductive film are performed within a single chamber.
Claim 18
Dependent Claim
29 words
The method according to claim 9 , wherein said step for forming a barrier metal layer and said step of forming a conductive film are performed within different chambers.
References Cited (Backward Citations)
US5071789A
Cited
US4902645A
Cited
US4851369A
Cited
US4897709A
Cited
US5478780A
Cited
US5254498A
Cited
US5407861A
Cited
US5430328A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |