Abstract Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.
A semiconductor laser device including a plurality of sequentially formed layers, comprising: a first cladding layer, a first optical guide layer, a first carrier block layer, an active layer, a second carrier blocking layer, a second optical guide layer, a second cladding layer, band gaps of the first and second optical guide layers being wider than that of the active layer, band gaps of the first and second cladding layers being wider than those of the first and second optical guide layers, band gaps of the first and second carrier blocking layers being wider than those of the first and second optical guide layers, one of the first and second cladding layers being of p-type, the other being of n-type, wherein a refractive index of the p-type cladding layer is lower than that of the n-type cladding layer.
Claim 2
Dependent Claim
138 words
A semiconductor laser device including a plurality of sequentially formed layers, comprising: a first cladding layer, a first optical guide layer, a first carrier block layer, an active layer, a second carrier blocking layer, a second optical guide layer, a second cladding layer, band gaps of the first and second optical guide layers being wider than that of the active layer, band gaps of the first and second cladding layers being wider than those of the first and second optical guide layers, band gaps of the first and second carrier blocking layers being wider than those of the first and second optical guide layers, one of the first and second cladding layers being of p-type, the other being of n-type, wherein a refractive index of the p-type cladding layer is lower than that of the n-type cladding layer.
Claim 3
Dependent Claim
25 words
The semiconductor laser device of claim 1 , wherein a thickness of the p-type cladding layer is smaller than that of the n-type cladding layer.