US3855607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor injection laser with reduced divergence of emitted beam
Assignee: RCA Corp
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Filing: 1973-05-29
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Granted: 1974-12-17
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Expires: 1993-05-29
Abstract
Abstract A body of single crystalline semiconductor material having a radiation generating region sandwiched between two other regions. the junctions between the intermediate radiation generating region and each of the outer two regions are heterojunctions which extend to an edge of the body. The intermediate region is of a material having a bandgap energy which is lower than that of the materials of the other two regions but the difference between the bandgap energy of the intermediate region and one of the outer regions is smaller than the bandgap energy between the intermediate region and the other of the outer regions.
Inventors
- 👤 H Kressel
- 👤 H Lockwood
- 👤 F Hawrylo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S2301/00; H01S2301/18; H01S5/321; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
190 words
A semiconductor injection laser comprising a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of the first region and a third region between said first and second regions, said third region having at least a portion thereof of a conductivity type which is capable of generating light when a voltage is placed across said body, the junctions between said third region and each of said first and second regions being heterojunctions which extend to an edge of the body, and the third region having a bandgap energy which is lower than the bandgap energy of each of the first and second regions with the bandgap energy difference between the third region and the first region being less than the bandgap energy difference between the third region and the second region, such that, the ratio of the difference of the indices of refraction of the third region and the second region to the difference of the indices of refraction of the third region and the first region is in the order of 5 to 1.
Claim 2
Dependent Claim
190 words
A semiconductor injection laser comprising a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of the first region and a third region between said first and second regions, said third region having at least a portion thereof of a conductivity type which is capable of generating light when a voltage is placed across said body, the junctions between said third region and each of said first and second regions being heterojunctions which extend to an edge of the body, and the third region having a bandgap energy which is lower than the bandgap energy of each of the first and second regions with the bandgap energy difference between the third region and the first region being less than the bandgap energy difference between the third region and the second region, such that, the ratio of the difference of the indices of refraction of the third region and the second region to the difference of the indices of refraction of the third region and the first region is in the order of 5 to 1.
Claim 3
Dependent Claim
26 words
A semiconductor injection laser in accordance with claim 1 in which the third region forms a PN junction with one of the first and second regions.
Claim 4
Dependent Claim
36 words
A semiconductor injection laser in accordance with claim 2 in which the first region is of N type conductivity, the second region is of P type conductivity and the third region is of P type conductivity.
Claim 5
Dependent Claim
43 words
A semiconductor injection laser in accordance with claim 1 in which the third region includes portions of opposite conductivity type forming a PN junction therebetween, said portions extending substantially parallel to the heterojunctions between the third region and the first and second regions.
Claim 6
Dependent Claim
31 words
A semiconductor injection laser in accordance with claim 4 in which the P type portion of the third region extends along the heterojunction between the third region and the second region.
Claim 7
Dependent Claim
51 words
A semiconductor injection laser in accordance with claim 1 in which the third region is of gallium arsenide and each of the first and second regions is of gallium aluminum arsenide with the content of aluminum in the first region being smaller than the content of aluminum in the second region.
Claim 8
Dependent Claim
49 words
A semiconductor injection laser in accordance with claim 6 in which the bandgap energy difference between the third region and the first region is not greater than about 0.025 eV and the bandgap energy difference between the third region and the second region is greater than about 0.1 eV.
Claim 9
Dependent Claim
58 words
A semiconductor injection laser in accordance with claim 1 in which each of the regions is of gallium aluminum arsenide with the content of aluminum in the third region being smaller than that in each of the first and second regions and the content of aluminum in the first region being smaller than that in the second region.
Claim 10
Dependent Claim
49 words
A semiconductor injection laser in accordance with claim 8 in which the bandgap energy difference between the third region and the first region is not greater than about 0.025 eV and the bandgap energy difference between the third region and the second region is greater than about 0.1 eV.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-16 | 1978-06-17 | 1978-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-16 | 1982-06-17 | 1982-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-16 | 1986-06-17 | 1986-12-17 | $7700.00 | Window Closed / Lapsed |