Patent US5478400A successfully refreshed from Google Patents.
Patent US6174770B1 successfully refreshed from Google Patents.
US6174770B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a crown capacitor having HSG for DRAM memory
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 1999-10-14
•
Granted: 2001-01-16
•
Expires: 2019-10-14
Abstract
Abstract A method for manufacturing a semiconductor capacitor atop a conductive plug that is formed in a dielectric layer. A first oxide layer is formed on the dielectric layer and the conductive plug. Next, a crown opening in formed in the first oxide layer such that the conductive plug is exposed. Silicon sidewall spacers are formed on the sidewalls of the crown opening and then HSG silicon is formed on the silicon sidewall spacers. The HSG silicon and silicon sidewall spacers are oxidized and then a doped polysilicon layer is formed into the aid crown opening and over the oxidized HSG silicon. A thin dielectric layer is formed over the aid doped polysilicon layer and finally a top conductive layer is formed over the thin dielectric layer.
Inventors
- 👤 Min-Hwa Chi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:18
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/01; H10D1/041; H10D1/042; H10D1/716
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
119 words
A method for manufacturing a semiconductor capacitor atop a conductive plug, said conductive plug being formed in a dielectric layer, the method comprising the steps of: forming a first oxide layer on said dielectric layer and said conductive plug; forming a crown opening in said first oxide layer, said crown opening exposing said conductive plug; forming silicon sidewall spacers on the sidewalls of said crown opening; forming HSG silicon on said silicon sidewall spacers; oxidizing said HSG silicon and said silicon sidewall spacers; forming a doped polysilicon layer into said crown opening and over said oxidized HSG silicon; forming a thin dielectric layer over said doped polysilicon layer; and forming a top conductive layer over said thin dielectric layer.
Claim 2
Independent Claim
119 words
A method for manufacturing a semiconductor capacitor atop a conductive plug, said conductive plug being formed in a dielectric layer, the method comprising the steps of: forming a first oxide layer on said dielectric layer and said conductive plug; forming a crown opening in said first oxide layer, said crown opening exposing said conductive plug; forming silicon sidewall spacers on the sidewalls of said crown opening; forming HSG silicon on said silicon sidewall spacers; oxidizing said HSG silicon and said silicon sidewall spacers; forming a doped polysilicon layer into said crown opening and over said oxidized HSG silicon; forming a thin dielectric layer over said doped polysilicon layer; and forming a top conductive layer over said thin dielectric layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 further including the step of removing said oxidized HSG silicon and said first oxide layer after said polysilicon layer is formed.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said conductive plug and said top conductive layer are formed from polysilicon.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said sidewall spacers are formed from amorphous silicon.
Claim 6
Independent Claim
133 words
A method for manufacturing a semiconductor capacitor atop a conductive plug, said conductive plug being formed in a dielectric layer, the method comprising the steps of: forming a thin nitride layer on said dielectric layer; forming a first oxide layer on said thin nitride layer and said conductive plug; forming a crown opening in said first oxide layer; forming silicon sidewall spacers on the sidewalls of said crown opening; forming HSG silicon on said silicon sidewall spacers; oxidizing said HSG silicon and said silicon sidewall spacers; etching through said thin nitride layer to expose said conducting plug; forming a doped polysilicon layer into said crown opening and over said oxidized HSG silicon; forming a thin dielectric layer over said doped polysilicon layer; and forming a top conductive layer over said thin dielectric layer.
Claim 7
Independent Claim
133 words
A method for manufacturing a semiconductor capacitor atop a conductive plug, said conductive plug being formed in a dielectric layer, the method comprising the steps of: forming a thin nitride layer on said dielectric layer; forming a first oxide layer on said thin nitride layer and said conductive plug; forming a crown opening in said first oxide layer; forming silicon sidewall spacers on the sidewalls of said crown opening; forming HSG silicon on said silicon sidewall spacers; oxidizing said HSG silicon and said silicon sidewall spacers; etching through said thin nitride layer to expose said conducting plug; forming a doped polysilicon layer into said crown opening and over said oxidized HSG silicon; forming a thin dielectric layer over said doped polysilicon layer; and forming a top conductive layer over said thin dielectric layer.
Claim 8
Dependent Claim
26 words
The method of claim 5 further including the step of removing said oxidized HSG silicon and said first oxide layer after said polysilicon layer is formed.
Claim 9
Dependent Claim
18 words
The method of claim 5 wherein said conductive plug and said top conductive layer are formed from polysilicon.
Claim 10
Dependent Claim
14 words
The method of claim 5 wherein said sidewall spacers are formed from amorphous silicon.
Claim 11
Dependent Claim
28 words
The method of claim 5 further including the step of forming a thin oxide layer over said thin nitride layer before the step of forming said HSG silicon.
References Cited (Backward Citations)
US6046083A
Cited
US6010942A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-16 | 2004-07-17 | 2005-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-16 | 2008-07-17 | 2009-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-16 | 2012-07-17 | 2013-01-16 | $7700.00 | Window Closed / Lapsed |